Aliphatic mixed ligands Sn(II) complexes as photon absorbers in quantum dots sensitized solar cell

2022 ◽  
pp. 122890
Author(s):  
M.A. Agoro ◽  
E.L. Meyer ◽  
J.Z. Mbese ◽  
X. Fuku ◽  
C.C. Ahia
Keyword(s):  
Quantum Dots ◽  
Solar Cell ◽  
Mixed Ligands

Efficient quantum dot-sensitized solar cell with tunable energy band CdSexS(1−x) quantum dots

2012 ◽  
Vol 22 (21) ◽  
pp. 10525 ◽  
Author(s):  
Ting Shu ◽  
Ziming Zhou ◽  
Heng Wang ◽  
Guanghui Liu ◽  
Peng Xiang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Solar Cell ◽  
Quantum Dot ◽  
Energy Band

Investigation of Quantum Dot Solar Cell Device Performance

2013 ◽  
Vol 1551 ◽  
pp. 137-142
Author(s):  
Neil S. Beattie ◽  
Guillaume Zoppi ◽  
Ian Farrer ◽  
Patrick See ◽  
Robert W. Miles ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Solar Cell ◽  
Quantum Dot ◽  
Band Gap ◽  
Control Device ◽  
Open Circuit ◽  
Device Performance ◽  
Intermediate Band ◽  
Control Devices

ABSTRACTThe device performance of GaAs p-i-n solar cells containing stacked layers of self-assembled InAs quantum dots is investigated. The solar cells demonstrate enhanced external quantum efficiency below the GaAs band gap relative to a control device without quantum dots. This is attributed to the capture of sub-band gap photons by the quantum dots. Analysis of the current density versus voltage characteristic for the quantum dot solar cell reveals a decrease in the series resistance as the device area is reduce from 0.16 cm2 to 0.01 cm2. This is effect is not observed in control devices and is quantum dot related. Furthermore, low temperature measurements of the open circuit voltage for both quantum dot and control devices provide experimental verification of the conditions required to realise an intermediate band gap solar cell.

scholarly journals Carbon quantum dots interfacial modified graphene/silicon Schottky barrier solar cell

2020 ◽  
Vol 835 ◽  
pp. 155268 ◽  
Author(s):  
Chao Geng ◽  
Yudong Shang ◽  
JiaJia Qiu ◽  
Qidi Wang ◽  
Xiuhua Chen ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Solar Cell ◽  
Schottky Barrier ◽  
Carbon Quantum Dots ◽  
Modified Graphene

scholarly journals An inverted ZnO/P3HT:PbS bulk-heterojunction hybrid solar cell with a CdSe quantum dot interface buffer layer

RSC Advances ◽  
2020 ◽  
Vol 10 (28) ◽  
pp. 16693-16699 ◽  
Author(s):  
Ajith Thomas ◽  
R. Vinayakan ◽  
V. V. Ison
Keyword(s):  
Quantum Dots ◽  
Solar Cell ◽  
Quantum Dot ◽  
Buffer Layer ◽  
Active Layer ◽  
Bulk Heterojunction ◽  
Hybrid Solar Cell ◽  
Device Performance ◽  
Cdse Quantum Dots ◽  
Cdse Quantum Dot

An inverted bulk-heterojunction hybrid solar cell with the structure ITO/ZnO/P3HT:PbS/Au was prepared. The device performance was enhanced by inserting an interface buffer layer of CdSe quantum dots between the ZnO and the P3HT:PbS BHJ active layer.

Boron-doped graphene quantum dots: an efficient photoanode for a dye sensitized solar cell

2019 ◽  
Vol 43 (36) ◽  
pp. 14313-14319 ◽  
Author(s):  
Vijaya Prabhagar. M. ◽  
M. Praveen Kumar ◽  
Chisato Takahashi ◽  
Subrata Kundu ◽  
Tharangattu N. Narayanan ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Solar Cell ◽  
Graphene Quantum Dots ◽  
Cost Effective ◽  
Dye Sensitized Solar Cell ◽  
Graphene Quantum Dot ◽  
Dye Sensitized ◽  
Boron Doped ◽  
Microwave Reactor ◽  
Doped Graphene

A cost effective boron doped graphene quantum dot from boron carbide graphene by microwave reactor assisted process that can tune the properties of metal oxides for DSSC application is proposed by D. K. Pattanayak, S. Kundu, T. N. Narayanan and co-workers.

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