Reveal the stacking fault shearing mechanism by its annihilation process in Ni-based single crystal superalloys

2021 ◽  
pp. 111419
Author(s):  
Pengfei Qu ◽  
Wenchao Yang ◽  
Jiarun Qin ◽  
Kaili Cao ◽  
Chen Liu ◽  
...  
Keyword(s):  
Single Crystal ◽  
Stacking Fault ◽  
Annihilation Process ◽  
Shearing Mechanism

Laser damage mechanism and in-situ observation of stacking fault relaxation in β-Ga2O3 single crystal by EFG method

CrystEngComm ◽  
2021 ◽  
Author(s):  
Bo Fu ◽  
Gaohang He ◽  
Wenxiang Mu ◽  
Yang Li ◽  
Boyuan Feng ◽  
...  
Keyword(s):  
Single Crystal ◽  
Light Field ◽  
Damage Mechanism ◽  
Stacking Fault ◽  
High Light ◽  
Laser Damage ◽  
In Situ Observation ◽  
Structure Destruction

We designed an original and effective method to study the laser damage mechanism of β-Ga2O3 single crystal grown by edge-defined film-fed growth (EFG). The structure destruction under high light field...

First-principle study of stacking fault energy for ZnSe single crystal

2015 ◽  
Vol 96 ◽  
pp. 81-84
Author(s):  
Cuixia Liu ◽  
Zengyun Jian ◽  
Man Zhu ◽  
Lianyang Chen
Keyword(s):  
Single Crystal ◽  
Stacking Fault ◽  
Stacking Fault Energy ◽  
First Principle ◽  
Znse Single Crystal

scholarly journals Microstructure Evolution in He-Implanted Si at 600 °C Followed by 1000 °C Annealing

Materials ◽  
2021 ◽  
Vol 14 (17) ◽  
pp. 5107
Author(s):  
Zhen Yang ◽  
Zhiping Zou ◽  
Zeyang Zhang ◽  
Yubo Xing ◽  
Tao Wang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Single Crystal ◽  
Microstructure Evolution ◽  
Cavity Growth ◽  
Stacking Fault ◽  
Structural Defects ◽  
Dislocation Loops ◽  
Transmission Electron

Si single crystal was implanted with 230 keV He+ ions to a fluence of 5 × 1016/cm2 at 600 °C. The structural defects in Si implanted with He at 600 °C and then annealed at 1000 °C were investigated by transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM). The microstructure of an as-implanted sample is provided for comparison. After annealing, rod-like defects were diminished, while tangled dislocations and large dislocation loops appeared. Dislocation lines trapped by cavities were directly observed. The cavities remained stable except for a transition of shape, from octahedron to tetrakaidecahedron. Stacking-fault tetrahedrons were found simultaneously. Cavity growth was independent of dislocations. The evolution of observed lattice defects is discussed.

scholarly journals Annihilation of relativistic positrons in single crystal with production of one photon

2015 ◽  
Vol 30 (22) ◽  
pp. 1550137 ◽  
Author(s):  
N. P. Kalashnikov ◽  
E. A. Mazur ◽  
A. S. Olczak
Keyword(s):  
Conservation Laws ◽  
Single Crystal ◽  
Single Photon ◽  
Momentum Conservation ◽  
Transverse Motion ◽  
Annihilation Process ◽  
Channeled Particle ◽  
Energy And Momentum ◽  
Photon Annihilation

The energy and momentum conservation laws prohibit positron–electron single-photon annihilation in vacuum. It is shown that the situation is different in a single crystal with one of the leptons (e.g. positron) moving in the channeling (or in the quasi-channeling) mode. The transverse motion of an oriented or channeled particle may sharply increase the probability of the single-photon annihilation process.

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