Fabrication and electrochemical behavior of vertically-aligned carbon nanotube electrodes covalently attached to p-type silicon via a thioester linkage

2009 ◽  
Vol 63 (9-10) ◽  
pp. 757-760 ◽  
Author(s):  
Zihan Poh ◽  
Benjamin S. Flavel ◽  
Cameron J. Shearer ◽  
Joseph G. Shapter ◽  
Amanda V. Ellis
Keyword(s):  
Carbon Nanotube ◽  
Electrochemical Behavior ◽  
Type Silicon ◽  
Vertically Aligned ◽  
P Type

Vertically Aligned Carbon Nanotube Arrays for Room Temperature Gas Sensors

2007 ◽  
Vol 1057 ◽  
Author(s):  
Suresh Rajaputra ◽  
Raghu Mangu ◽  
Ning Ma ◽  
Patricia Clore ◽  
Dali Qian ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Amorphous Carbon ◽  
Room Temperature ◽  
Carbon Layer ◽  
Anodized Aluminum ◽  
Multiwalled Carbon ◽  
Anodized Aluminum Oxide ◽  
Cnt Arrays ◽  
Vertically Aligned ◽  
P Type

ABSTRACTVertically aligned multiwalled carbon nanotube (CNT) arrays were fabricated in anodized aluminum oxide (AAO) templates without the use of a catalyst, using xylene pyrolysis. The CNT arrays in AAO template were integrated into a resistive sensor design. The sensors were found to be highly responsive to NH3 and NO2 with steady state sensitivities of 5% and 10% for 100ppm of NH3 and NO2 respectively, at room temperature. Results were interpreted in terms of the CNTs acting as p-type semiconductors. A study was undertaken to elucidate the dependence of sensitivity on the thickness of the conducting amorphous carbon layers on top and bottom. Recovery of the MWNT gas sensor was studied for different types of desorption techniques. The thickness of the amorphous carbon layer (sheet resistance) was found to be critical in determining the sensor response.

Light-Harvesting Using High Density p-type Single Wall Carbon Nanotube/n-type Silicon Heterojunctions

ACS Nano ◽  
2009 ◽  
Vol 3 (6) ◽  
pp. 1407-1414 ◽  
Author(s):  
Zhongrui Li ◽  
Vasyl P. Kunets ◽  
Viney Saini ◽  
Yang Xu ◽  
Enkeleda Dervishi ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Light Harvesting ◽  
High Density ◽  
Single Wall Carbon Nanotube ◽  
Single Wall Carbon ◽  
Type Silicon ◽  
Silicon Heterojunctions ◽  
P Type

Fabrication of Carbon Nanotube Triode Using Helicon Plasma Cvd with Electroplated Nico Catalyst

2003 ◽  
Vol 772 ◽  
Author(s):  
Masakazu Muroyama ◽  
Kazuto Kimura ◽  
Takao Yagi ◽  
Ichiro Saito
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Metal Catalyst ◽  
Ni Catalyst ◽  
Plasma Cvd ◽  
Helicon Plasma ◽  
Plasma Enhanced Cvd ◽  
Turn On ◽  
Aligned Carbon Nanotubes ◽  
Vertically Aligned

AbstractA carbon nanotube triode using Helicon Plasma-enhanced CVD with electroplated NiCo catalyst has been successfully fabricated. Isolated NiCo based metal catalyst was deposited at the bottom of the cathode wells by electroplating methods to control the density of carbon nanotubes and also reduce the activation energy of its growth. Helicon Plasma-enhanced CVD (HPECVD) has been used to deposit nanotubes at 400°C. Vertically aligned carbon nanotubes were then grown selectively on the electroplated Ni catalyst. Field emission measurements were performed with a triode structure. At a cathode to anode gap of 1.1mm, the turn on voltage for the gate was 170V.

Carbon Nanotube Gas Sensor Fabricated on Anodic Aluminum Oxide

2007 ◽  
Vol 124-126 ◽  
pp. 1309-1312
Author(s):  
Nguyen Duc Hoa ◽  
Nguyen Van Quy ◽  
Gyu Seok Choi ◽  
You Suk Cho ◽  
Se Young Jeong ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Gas Sensor ◽  
Chemical Vapor ◽  
Fast Response ◽  
Device Fabrication ◽  
Alumina Oxide ◽  
Response And Recovery ◽  
New Type ◽  
P Type

A new type of gas sensor was realized by directly depositing carbon nanotube on nano channels of the anodic alumina oxide (AAO) fabricated on p-type silicon substrate. The carbon nanotubes were synthesized by thermal chemical vapor deposition at a very high temperature of 1200 oC to improve the crystallinity. The device fabrication process was also developed. The contact of carbon nanotubes and p-type Si substrate showed a Schottky behavior, and the Schottky barrier height increased with exposure to gases while the overall conductivity decreased. The sensors showed fast response and recovery to ammonia gas upon the filling (400 mTorr) and evacuation.

Electrochemical preparation of vertically aligned, hollow CdSe nanotubes and their p–n junction hybrids with electrodeposited Cu2O

Nanoscale ◽  
2014 ◽  
Vol 6 (15) ◽  
pp. 9148-9156 ◽  
Author(s):  
Joyashish Debgupta ◽  
Ramireddy Devarapalli ◽  
Shakeelur Rahman ◽  
Manjusha V. Shelke ◽  
Vijayamohanan K. Pillai
Keyword(s):  
Charge Carriers ◽  
Type Ii ◽  
Electrochemical Preparation ◽  
Enhanced Absorption ◽  
Absorption Of Light ◽  
Vertically Aligned ◽  
P Type

Heterojunction (type II) of self standing, vertically aligned CdSe NTs (n-type) with electrodeposited Cu2O (p-type) exhibits excellent photoresponse, resulting from enhanced absorption of light and faster transport of photogenerated charge carriers by CdSe NTs.

scholarly journals Determination of piezo-resistive coefficient π44 in p-type silicon by comparing simulation and measurement of pressure sensors

AIP Advances ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 085005
Author(s):  
Kevin Lauer ◽  
Geert Brokmann ◽  
Mario Bähr ◽  
Thomas Ortlepp
Keyword(s):  
Pressure Sensors ◽  
Type Silicon ◽  
P Type
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