Piezoelectric response of aligned carbon nanotubes depending on sublayer material

The results of experimental studies of the effect of the sublayer material on the piezoelectric response and sensitivity to mechanical deformations of aligned carbon nanotubes (CNTs) are presented. It is shown that the highest piezoelectric response (136 nA at a pressing force of 4 μN) and best sensitivity are demonstrated by CNTs grown on a Mo sublayer. This dependence is probably due to the geometric parameters of CNTs and the structure of the CNT array as a whole. The results obtained can be used to develop energy-efficient nanogenerators based on CNT arrays.

Development of a CMOS-Compatible Carbon Nanotube Array Transfer Method

Carbon nanotubes (CNTs) have, over the years, been used in research as a promising material in electronics as a thermal interface material and as interconnects amongst other applications. However, there exist several issues preventing the widespread integration of CNTs onto device applications, e.g., high growth temperature and interfacial resistance. To overcome these issues, a complementary metal oxide semiconductor (CMOS)-compatible CNT array transfer method that electrically connects the CNT arrays to target device substrates was developed. The method separates the CNT growth and preparation steps from the target substrate. Utilizing an alignment tool with the capabilities of thermocompression enables a highly accurate transfer of CNT arrays onto designated areas with desired patterns. With this transfer process as a starting point, improvement pointers are also discussed in this paper to further improve the quality of the transferred CNTs.

Hydrogen Plasma Treatment of Aligned Multi-Walled Carbon Nanotube Arrays for Improvement of Field Emission Properties

Vertically aligned carbon nanotube (CNT) arrays show potential for the development of planar low-voltage emission cathodes. The characteristics of cathodes can be improved by modifying their surface, e.g., by hydrogen plasma treatment, as was performed in this work. The surface of multi-walled CNT arrays grown on silicon substrates from toluene and ferrocene using catalytic chemical vapor deposition was treated in a high-pressure (~104 Pa) microwave reactor. The structure, composition, and current-voltage characteristics of the arrays were studied before and after hydrogen plasma treatment at various power values and durations. CNT tips were destroyed and catalytic iron was released from the CNT channels. The etching rate was influenced by iron particles that formed on the array surface. The lower emission threshold in the plasma-treated arrays than in the initial sample is explained by the amplification factor of the local electric field increasing due to graphene structures of unfolded nanotube layers that formed at the CNT tips.

Synthesis of Vertical Carbon Nanotube Interconnect Structures Using CMOS-Compatible Catalysts

Synthesis of the vertically aligned carbon nanotubes (CNTs) using complementary metal-oxide-semiconductor (CMOS)-compatible methods is essential to integrate the CNT contact and interconnect to nanoscale devices and ultra-dense integrated nanoelectronics. However, the synthesis of high-density CNT array at low-temperature remains a challenging task. The advances in the low-temperature synthesis of high-density vertical CNT structures using CMOS-compatible methods are reviewed. Primarily, recent works on theoretical simulations and experimental characterizations of CNT growth emphasized the critical roles of catalyst design in reducing synthesis temperature and increasing CNT density. In particular, the approach of using multilayer catalyst film to generate the alloyed catalyst nanoparticle was found competent to improve the active catalyst nanoparticle formation and reduce the CNT growth temperature. With the multilayer catalyst, CNT arrays were directly grown on metals, oxides, and 2D materials. Moreover, the relations among the catalyst film thickness, CNT diameter, and wall number were surveyed, which provided potential strategies to control the tube density and the wall density of synthesized CNT array.

Room-Temperature Hydrogen-Gas Sensor Based on Carbon Nanotube Yarn

The proposed study describes the development of a carbon nanotube (CNT)-based gas sensor capable of detecting the presence of hydrogen (H2) gas at room temperature. CNT yarn used in the proposed sensor was fabricated from synthesized CNT arrays. Subsequently, the yarn was treated by means of a simple one-step procedure, called acid treatment, to facilitate removal of impurities from the yarn surface and forming functional species. To verify the proposed sensor’s effectiveness with regard to detection of H2 gas at room temperature, acid-treated CNT and pure yarns were fabricated and tested under identical conditions. Corresponding results demonstrate that compared to the untreated CNT yarn, the acid-treated CNT yarn exhibits higher sensitivity to the presence of H2 gas at room temperature. Additionally, the acid-treated CNT yarn was observed to demonstrate excellent selectivity pertaining to H2 gas.

Aligned, high-density semiconducting carbon nanotube arrays for high-performance electronics

Single-walled carbon nanotubes (CNTs) may enable the fabrication of integrated circuits smaller than 10 nanometers, but this would require scalable production of dense and electronically pure semiconducting nanotube arrays on wafers. We developed a multiple dispersion and sorting process that resulted in extremely high semiconducting purity and a dimension-limited self-alignment (DLSA) procedure for preparing well-aligned CNT arrays (within alignment of 9 degrees) with a tunable density of 100 to 200 CNTs per micrometer on a 10-centimeter silicon wafer. Top-gate field-effect transistors (FETs) fabricated on the CNT array show better performance than that of commercial silicon metal oxide–semiconductor FETs with similar gate length, in particular an on-state current of 1.3 milliamperes per micrometer and a recorded transconductance of 0.9 millisiemens per micrometer for a power supply of 1 volt, while maintaining a low room-temperature subthreshold swing of <90 millivolts per decade using an ionic-liquid gate. Batch-fabricated top-gate five-stage ring oscillators exhibited a highest maximum oscillating frequency of >8 gigahertz.