Microstructural evolution of oxygen incorporated CdTe thin films deposited by close-spaced sublimation

2021 ◽  
pp. 130552
Author(s):  
M.N. Harif ◽  
K.S. Rahman ◽  
C. Doroody ◽  
H.N. Rosly ◽  
M. Isah ◽  
...  
2017 ◽  
Vol 9 (5) ◽  
pp. 05016-1-05016-5 ◽  
Author(s):  
Y. P. Saliy ◽  
◽  
L. I. Nykyruy ◽  
R. S. Yavorskyi ◽  
S. Adamiak ◽  
...  

1995 ◽  
Vol 382 ◽  
Author(s):  
Martin Pehnt ◽  
Douglas L. Schulz ◽  
Calvin J. Curtis ◽  
Helio R. Moutinho ◽  
Amy Swartzlander ◽  
...  

ABSTRACTIn this article we report the first nanoparticle-derived route to smooth, dense, phase-pure CdTe thin films. Capped CdTe nanoparticles were prepared by injection of a mixture of Cd(CH3)2, (n-C8H17)3 PTe and (n-C8H17)3P into (n-C8H17)3PO at elevated temperatures. The resultant nanoparticles 32-45 Å in diameter were characterized by x-ray diffraction, UV-Vis spectroscopy, transmission electron microscopy, thermogravimetric analysis and energy dispersive x-ray spectroscopy. CdTe thin film deposition was accomplished by dissolving CdTe nanoparticles in butanol and then spraying the solution onto SnO2-coated glass substrates at variable susceptor temperatures. Smooth and dense CdTe thin films were obtained using growth temperatures approximately 200 °C less than conventional spray pyrolysis approaches. CdTe films were characterized by x-ray diffraction, UV-Vis spectroscopy, atomic force microscopy, and Auger electron spectroscopy. An increase in crystallinity and average grain size as determined by x-ray diffraction was noted as growth temperature was increased from 240 to 300 °C. This temperature dependence of film grain size was further confirmed by atomic force microscopy with no remnant nanocrystalline morphological features detected. UV-Vis characterization of the CdTe thin films revealed a gradual decrease of the band gap (i.e., elimination of nanocrystalline CdTe phase) as the growth temperature was increased with bulk CdTe optical properties observed for films grown at 300 °C.


1995 ◽  
Vol 10 (1) ◽  
pp. 71-76 ◽  
Author(s):  
B Ghosh ◽  
S Purakayastha ◽  
P K Datta ◽  
R W Miles ◽  
M J Carter ◽  
...  

2012 ◽  
Vol 42 (3) ◽  
pp. 389-397
Author(s):  
V. Srivastav ◽  
R. Pal ◽  
N. Saini ◽  
R. S. Saxena ◽  
R. K. Bhan ◽  
...  

1996 ◽  
Vol 225-227 ◽  
pp. 169-174 ◽  
Author(s):  
D.L. Schulz ◽  
M. Pehnt ◽  
C.J. Curtis ◽  
D.S. Ginley

2007 ◽  
Vol 4 (10) ◽  
pp. 3659-3663 ◽  
Author(s):  
S. Neretina ◽  
D. Grebennikov ◽  
R. A. Hughes ◽  
M. Weber ◽  
K. G. Lynn ◽  
...  

2008 ◽  
Author(s):  
Ajit Mahadkar ◽  
Alka Chauhan ◽  
Madhavi Thakurdesai ◽  
Deepak Gaikwad ◽  
P. Predeep ◽  
...  

2013 ◽  
Vol 2013 ◽  
pp. 1-4
Author(s):  
A. Gonzalez-Cisneros ◽  
F. L. Castillo-Alvarado ◽  
J. Ortiz-Lopez ◽  
G. Contreras-Puente

In CdS/CdTe solar cells, chemical interdiffusion at the interface gives rise to the formation of an interlayer of the ternary compoundCdSxCdTe1-x. In this work, we evaluate the effects of this interlayer in CdS/CdTe photovoltaic cells in order to improve theoretical results describing experimentalC-V(capacitance versus voltage) characteristics. We extended our previous theoretical methodology developed on the basis of three cardinal equations (Castillo-Alvarado et al., 2010). The present results provide a better fit to experimental data obtained from CdS/CdTe solar cells grown in our laboratory by the chemical bath deposition (for CdS film) and the close-spaced vapor transport (for CdTe film) techniques.


1990 ◽  
Vol 202 ◽  
Author(s):  
J. A. Barnard ◽  
E. Haftek ◽  
A. Waknis ◽  
M. Tan

ABSTRACTThe growth and microstructural evolution of Al/Ni and Ni/AI bilayer thin films have been investigated as a function of Al and Ni layer thickness and thermal treatment by transmission electron microscopy. Studies were also made of Al and Ni single layers of varying thickness. All films were grown by dc magnetron sputtering using carbon coated Cu TEM grids as substrates. For the bilayers, the Al thickness was fixed at either 3.5 or 7.0 nm while the Ni thickness was varied systematically from 3.2 to 12.8 nm. Deposition sequence significantly influenced bilayer microstructure even in as-deposited samples. Al/Ni bilayers generally exhibited a finer microstructure than Ni/AI. In the 3.5 nm Al/Ni bilayers no conclusive electron diffraction evidence was found for elemental Al while for the reverse sequence both Al and NiAl3 diffraction rings were found. In the 7.0 nm Al/Ni bilayers diffraction rings due to Al were observed. The reverse sequence again produced both Al and NiAl3 diffraction rings. Interestingly, diffraction rings due to the Ni layers were found for all samples but were consistently measured at positions corresponding to a 2.5–3.5% increase in interplanar spacing. Annealing at 385°C produced evidence for generalized grain growth and strong accentuation of the electron diffraction rings due to the NiAl3 phase. Again, deposition significantly influenced annealed bilayer microstructure. For the Al/Ni sequence annealing produced polycrystalline N1AI3 island-like structures, while for Ni/AI bilayers, annealing promoted the growth of small NiAl3 crystals uniformly distributed in the film.


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