Role of micro-nano fabrication process on the temperature coefficient of resistance of platinum thin films resistance temperature detector

2021 ◽  
pp. 131313
Author(s):  
Weiming Lv ◽  
Yiqun Wang ◽  
Wenhua Shi ◽  
Wei Cheng ◽  
Rong Huang ◽  
...  
Keyword(s):  
Thin Films ◽  
Temperature Coefficient ◽  
Fabrication Process ◽  
Temperature Coefficient Of Resistance ◽  
Resistance Temperature Detector ◽  
Nano Fabrication ◽  
Temperature Detector

Electrical properties and aging behavior of nickel manganite thin films co-doped with Cu and Zn annealed at low temperature

2020 ◽  
Author(s):  
Duc Thang Le ◽  
Heongkyu Ju
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Temperature Coefficient ◽  
Negative Temperature ◽  
Absolute Temperature ◽  
Electrical Stability ◽  
Temperature Coefficient Of Resistance ◽  
Cu Doping ◽  
Free Films ◽  
Co Doped

Abstract Nickel-manganite-based thin films with a negative temperature coefficient of resistance (NTCR) characteristic were prepared from (Ni 0.2 Mn 2.8– x Cu x )Cl 2 (0.010£ x £0.040) solutions using the liquid flow deposition (LFD) method. The influence of Cu on the electrical properties of the films annealed at 400 °C was investigated. Adding Cu ( x = 0.025) was found to quite effectively lower the electrical resistivity ( ρ ) of the films to 200 W cm, whereas their sensitivity behavior was significantly degraded. Interestingly, the absolute temperature coefficient of resistance ( TCR ) of the films was enhanced by further adding 0.01 mol Zn along with Cu, without a remarkable increase in ρ . TCR = 2.98% K – 1 and ρ = 880 W cm at room temperature were attained for the Zn-containing specimen with 0.020 mol Cu doping. Moreover, the films with (Zn,Cu) co-doped compositions showed a much higher electrical stability than the Zn-free films.

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