Effect of high temperature annealing on resistivity and temperature coefficient of resistance of sputtered platinum thin films of SiO2/Pt/SiOx interfaces

2020 ◽  
Vol 698 ◽  
pp. 137877 ◽  
Author(s):  
Timo Schössler ◽  
Florian Schön ◽  
Christian Lemier ◽  
Gerald Urban
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Temperature Coefficient ◽  
High Temperature Annealing ◽  
Temperature Coefficient Of Resistance

High temperature coefficient of resistance molybdenum oxide and nickel oxide thin films for microbolometer applications

2015 ◽  
Vol 54 (3) ◽  
pp. 037101 ◽  
Author(s):  
Yao O. Jin ◽  
David Saint John ◽  
Nikolas J. Podraza ◽  
Thomas N. Jackson ◽  
Mark W. Horn
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Nickel Oxide ◽  
Temperature Coefficient ◽  
Molybdenum Oxide ◽  
Oxide Thin Films ◽  
Temperature Coefficient Of Resistance ◽  
Nickel Oxide Thin Films

Silver ion implantation in epitaxial La2/3Ca1/3MnO3 thin films: Large temperature coefficient of resistance for bolometric applications

2000 ◽  
Vol 76 (15) ◽  
pp. 2104-2106 ◽  
Author(s):  
Ravi Bathe ◽  
K. P. Adhi ◽  
S. I. Patil ◽  
G. Marest ◽  
B. Hannoyer ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Temperature Coefficient ◽  
Silver Ion ◽  
Large Temperature ◽  
Temperature Coefficient Of Resistance

Carbon-doped single-crystalline SiGe/Si thermistor with high temperature coefficient of resistance and low noise level

2010 ◽  
Vol 97 (22) ◽  
pp. 223507 ◽  
Author(s):  
H. H. Radamson ◽  
M. Kolahdouz ◽  
S. Shayestehaminzadeh ◽  
A. Afshar Farniya ◽  
S. Wissmar
Keyword(s):  
High Temperature ◽  
Temperature Coefficient ◽  
Noise Level ◽  
Low Noise ◽  
Temperature Coefficient Of Resistance ◽  
Single Crystalline ◽  
Carbon Doped

scholarly journals Comparative Study of ZnO Thin Films Grown on Quartz Glass and Sapphire (001) Substrates by Means of Magnetron Sputtering and High-Temperature Annealing

2019 ◽  
Vol 9 (21) ◽  
pp. 4509
Author(s):  
Weijia Yang ◽  
Fengming Wang ◽  
Zeyi Guan ◽  
Pengyu He ◽  
Zhihao Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Magnetron Sputtering ◽  
Comparative Study ◽  
Quartz Glass ◽  
Photoelectron Spectroscopy ◽  
Zno Thin Films ◽  
High Temperature Annealing ◽  
X Ray ◽  
Glass Substrates

In this work, we reported a comparative study of ZnO thin films grown on quartz glass and sapphire (001) substrates through magnetron sputtering and high-temperature annealing. Firstly, the ZnO thin films were deposited on the quartz glass and sapphire (001) substrates in the same conditions by magnetron sputtering. Afterwards, the sputtered ZnO thin films underwent an annealing process at 600 °C for 1 h in an air atmosphere to improve the quality of the films. X-ray diffraction, scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy (XPS), ultraviolet-visible spectra, photoluminescence spectra, and Raman spectra were used to investigate the structural, morphological, electrical, and optical properties of the both as-received ZnO thin films. The ZnO thin films grown on the quartz glass substrates possess a full width of half maximum value of 0.271° for the (002) plane, a surface root mean square value of 0.50 nm and O vacancies/defects of 4.40% in the total XPS O 1s peak. The comparative investigation reveals that the whole properties of the ZnO thin films grown on the quartz glass substrates are comparable to those grown on the sapphire (001) substrates. Consequently, ZnO thin films with high quality grown on the quartz glass substrates can be achieved by means of magnetron sputtering and high-temperature annealing at 600 °C.

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