AgSbSe2 Nanoparticles: A Solar Absorber Material with an Optimal Shockley-Queisser Band Gap

We report the synthesis of CTSe, a p-type titanium copper selenide semiconductor. Its band gap (1.15 eV) and its ultra-large absorption coefficient (105 cm−1) in the entire visible range make it a promising Earth-abundant solar absorber material.

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Transition Metal-Hyperdoped InP Semiconductors as Efficient Solar Absorber Materials

Nanomaterials ◽

10.3390/nano10020283 ◽

2020 ◽

Vol 10 (2) ◽

pp. 283 ◽

Cited By ~ 2

Author(s):

Gregorio García ◽

Pablo Sánchez-Palencia ◽

Pablo Palacios ◽

Perla Wahnón

Keyword(s):

Electronic Structure ◽

Transition Metal ◽

Electronic Band ◽

Solar Absorber ◽

Photovoltaic Efficiency ◽

Absorber Material ◽

Photovoltaic Applications ◽

New States ◽

Absorption Features ◽

Structure Calculations

This work explores the possibility of increasing the photovoltaic efficiency of InP semiconductors through a hyperdoping process with transition metals (TM = Ti, V, Cr, Mn). To this end, we investigated the crystal structure, electronic band and optical absorption features of TM-hyperdoped InP (TM@InP), with the formula TMxIn1-xP (x = 0.03), by using accurate ab initio electronic structure calculations. The analysis of the electronic structure shows that TM 3d-orbitals induce new states in the host semiconductor bandgap, leading to improved absorption features that cover the whole range of the sunlight spectrum. The best results are obtained for Cr@InP, which is an excellent candidate as an in-gap band (IGB) absorber material. As a result, the sunlight absorption of the material is considerably improved through new sub-bandgap transitions across the IGB. Our results provide a systematic and overall perspective about the effects of transition metal hyperdoping into the exploitation of new semiconductors as potential key materials for photovoltaic applications.

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Synthesis, characterization of Ta2O5 nanoparticles with doping SnO2– Ag on solar absorber material and designs analysis of energy production for solar cooker

Materials Today Proceedings ◽

10.1016/j.matpr.2020.05.740 ◽

2020 ◽

Vol 30 ◽

pp. 190-196

Author(s):

G. Palanikumar ◽

S. Shanmugan ◽

V. Chithambaram ◽

P. Selvaraju

Keyword(s):

Energy Production ◽

Solar Absorber ◽

Absorber Material

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Cd-Free Zn(O,S) as Alternative Buffer Layer for Chalcogenide and Kesterite Based Thin Films Solar Cells: A Review

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2020.17537 ◽

2020 ◽

Vol 20 (6) ◽

pp. 3622-3635 ◽

Cited By ~ 4

Author(s):

Kuldeep S. Gour ◽

Rahul Parmar ◽

Rahul Kumar ◽

Vidya N. Singh

Keyword(s):

Thin Film ◽

Thin Films ◽

Solar Cells ◽

Band Gap ◽

Buffer Layer ◽

Low Cost ◽

Incident Light ◽

High Resistivity ◽

Short Wavelength Range ◽

Absorber Material

Cd is categorized as a toxic material with restricted use in electronics as there are inherent problems of treating waste and convincing consumers that it is properly sealed inside without any threat of precarious leaks. Apart from toxicity, band-gap of CdS is about 2.40–2.50 eV, which results significant photon loss in short-wavelength range which restricts the overall performance of solar cells. Thin film of Zn(O,S) is a favorable contender to substitute CdS thin film as buffer layer for CuInGaSe2 (CIGS), CuInGa(S,Se)2 (CIGSSe), Cu2ZnSn(S,Se)4 (CZTSSe) Cu2ZnSnSe4 (CZTSe), Cu2ZnSnS4 (CZTS) thin film absorber material based photovoltaic due to it made from earth abundant, low cost, non-toxic materials and its ability to improve the efficiency of chalcogenide and kesterite based photovoltaic due to wider band-gap which results in reduction of absorption loss compared to CdS. In this review, apart from mentioning various deposition technique for Zn(O,S) thin films, changes in various properties i.e., optical, morphological, and opto-electrical properties of Zn(O,S) thin film deposited using various methods utilized for fabricating solar cell based on CIGS, CIGSSe, CZTS, CZTSe and CZTSSe thin films, the material has been evaluated for all the properties of buffer layer (high transparency for incident light, good conduction band lineup with absorber material, low interface recombination, high resistivity and good device stability).

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Lead tin sulfide (Pb 1− x Sn x S) nanocrystals: A potential solar absorber material

Journal of Colloid and Interface Science ◽

10.1016/j.jcis.2016.11.005 ◽

2017 ◽

Vol 488 ◽

pp. 246-250 ◽

Cited By ~ 6

Author(s):

Yen-Chen Zeng ◽

Sheng-Fong Sie ◽

Nipapon Suriyawong ◽

Belete Asefa Aragaw ◽

Jen-Bin Shi ◽

...

Keyword(s):

Tin Sulfide ◽

Solar Absorber ◽

Absorber Material

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Accelerated Aging of a Solar Absorber Material Subjected to Highly Concentrated Solar Flux

Energy Procedia ◽

10.1016/j.egypro.2014.03.176 ◽

2014 ◽

Vol 49 ◽

pp. 1673-1681 ◽

Cited By ~ 9

Author(s):

A. Boubault ◽

B. Claudet ◽

O. Faugeroux ◽

G. Olalde

Keyword(s):

Accelerated Aging ◽

Solar Flux ◽

Solar Absorber ◽

Absorber Material

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Orientation Effects of CH3NH3+ on CH3NH3PbI3 Stability and Photoelectric Properties

Materials Science Forum ◽

10.4028/www.scientific.net/msf.850.245 ◽

2016 ◽

Vol 850 ◽

pp. 245-252 ◽

Cited By ~ 2

Author(s):

Jun Zhou ◽

Fu Ling Tang ◽

Hong Tao Xue ◽

Feng Juan Si

Keyword(s):

Optical Properties ◽

Band Gap ◽

First Principles ◽

First Principles Calculations ◽

Photoelectric Properties ◽

Orientation Effects ◽

Light Absorber ◽

Absorber Material ◽

Organic Functional Groups ◽

The Stability

The orientation effects of the organic functional groups CH3NH3+ along [100], [110], [111] and [210] on the stability and photoelectric properties of CH3NH3PbI3 were investigated using first-principles calculations. The results showed that the system energies when C-N bond was along [100]/[210] directions were lower than those while C-N bond was along [110]/[111] directions. The band gap while C-N bond was along [100]/[210] direction was larger than that while C-N bond was along [110]/111] direction. The system energy changed within the range of 0.8 eV, and the band gap changed within the range of 0.05 eV as CH3NH3+ moving along the same crystal direction. The optical properties of CH3NH3PbI3 with the C-N bond along [100] direction were different from those with the C-N bond along [111] direction, while the differences were not obvious. The change trends of optical properties with CH3NH3+ moving for two structures were in agreement with each other. The optical properties indicate that CH3NH3PbI3 is a good light absorber material for thin film solar cells.

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Band Gap of Pb(Fe0.5Nb0.5)O3 Thin Films Prepared by Pulsed Laser Deposition

Materials ◽

10.3390/ma14226841 ◽

2021 ◽

Vol 14 (22) ◽

pp. 6841

Author(s):

Nicole Bartek ◽

Vladimir V. Shvartsman ◽

Houssny Bouyanfif ◽

Alexander Schmitz ◽

Gerd Bacher ◽

...

Keyword(s):

Thin Films ◽

Band Gap ◽

Open Circuit ◽

Ferroelectric Materials ◽

Promising Candidate ◽

Photovoltaic Efficiency ◽

Absorber Material ◽

Photovoltaic Applications ◽

High Band ◽

Ferroelectric Perovskite

Ferroelectric materials have gained high interest for photovoltaic applications due to their open-circuit voltage not being limited to the band gap of the material. In the past, different lead‑based ferroelectric perovskite thin films such as Pb(Zr,Ti)O3 (Pb,La)(Zr,Ti)O3 and PbTiO3 were investigated with respect to their photovoltaic efficiency. Nevertheless, due to their high band gaps they only absorb photons in the UV spectral range. The well-known ferroelectric PbFe0.5Nb0.5O3 (PFN), which is in a structure similar to the other three, has not been considered as a possible candidate until now. We found that the band gap of PFN is around 2.75 eV and that the conductivity can be increased from 23 S/µm to 35 S/µm during illumination. The relatively low band gap value makes PFN a promising candidate as an absorber material.

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Ag8SnS6: a new IR solar absorber material with a near optimal bandgap

RSC Advances ◽

10.1039/c8ra08734b ◽

2018 ◽

Vol 8 (69) ◽

pp. 39470-39476 ◽

Cited By ~ 2

Author(s):

Patsorn Boon-on ◽

Belete Asefa Aragaw ◽

Chun-Yen Lee ◽

Jen-Bin Shi ◽

Ming-Way Lee

Keyword(s):

Photovoltaic Properties ◽

Adsorption Reaction ◽

Solar Absorber ◽

Absorber Material ◽

Layer Adsorption ◽

Silar Technique ◽

Ionic Layer

We report the synthesis and photovoltaic properties of a new ternary solar absorber – Ag8SnS6 nanocrystals prepared by successive ionic layer adsorption reaction (SILAR) technique.

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