Characterization, Thermal Effect on Optical Band Gap Energy and Photoluminescence in Wurtzite ZnO:Er Nanocrystallites

2016 ◽  
Vol 3 (2) ◽  
pp. 145-151 ◽  
Author(s):  
Anitha ◽  
Usha ◽  
Jithin ◽  
Christy ◽  
Varughese
2015 ◽  
Vol 7 (3) ◽  
pp. 1923-1930
Author(s):  
Austine Amukayia Mulama ◽  
Julius Mwakondo Mwabora ◽  
Andrew Odhiambo Oduor ◽  
Cosmas Mulwa Muiva ◽  
Boniface Muthoka ◽  
...  

 Selenium-based chalcogenides are useful in telecommunication devices like infrared optics and threshold switching devices. The investigated system of Ge5Se95-xZnx (0.0 ≤ x ≤ 4 at.%) has been prepared from high purity constituent elements. Thin films from the bulk material were deposited by vacuum thermal evaporation. Optical absorbance measurements have been performed on the as-deposited thin films using transmission spectra. The allowed optical transition was found to be indirect and the corresponding band gap energy determined. The variation of optical band gap energy with the average coordination number has also been investigated based on the chemical bonding between the constituents and the rigidity behaviour of the system’s network.


Materials ◽  
2021 ◽  
Vol 14 (5) ◽  
pp. 1118
Author(s):  
Ibrahim Mustapha Alibe ◽  
Khamirul Amin Matori ◽  
Mohd Hafiz Mohd Zaid ◽  
Salisu Nasir ◽  
Ali Mustapha Alibe ◽  
...  

The contemporary market needs for enhanced solid–state lighting devices has led to an increased demand for the production of willemite based phosphors using low-cost techniques. In this study, Ce3+ doped willemite nanoparticles were fabricated using polymer thermal treatment method. The special effects of the calcination temperatures and the dopant concentration on the structural and optical properties of the material were thoroughly studied. The XRD analysis of the samples treated at 900 °C revealed the development and or materialization of the willemite phase. The increase in the dopant concentration causes an expansion of the lattice owing to the replacement of larger Ce3+ ions for smaller Zn2+ ions. Based on the FESEM and TEM micrographs, the nanoparticles size increases with the increase in the cerium ions. The mean particles sizes were estimated to be 23.61 nm at 1 mol% to 34.02 nm at 5 mol% of the cerium dopant. The optical band gap energy of the doped samples formed at 900 °C decreased precisely by 0.21 eV (i.e., 5.21 to 5.00 eV). The PL analysis of the doped samples exhibits a strong emission at 400 nm which is ascribed to the transition of an electron from localized Ce2f state to the valence band of O2p. The energy level of the Ce3+ ions affects the willemite crystal lattice, thus causing a decrease in the intensity of the green emission at 530 nm and the blue emission at 485 nm. The wide optical band gap energy of the willemite produced is expected to pave the way for exciting innovations in solid–state lighting applications.


2021 ◽  
Vol 317 ◽  
pp. 95-99
Author(s):  
Muhammad Noorazlan Abd Azis ◽  
Halimah Mohamed Kamari ◽  
Suriani Abu Bakar ◽  
Azlina Yahya ◽  
Umar Saad Aliyu

Borotellurite glass had been widely applied in the field of optical communications and devices. In this work, holmium oxides doped borotellurite glass had been successfully fabricated via conventional melt-quenched technique. The structural properties of holmium doped tellurite glass were found using x-ray diffraction (XRD) method. The nonexistence of sharp peaks in XRD pattern shows that the inclusion of holmium tellurite glass leads to the formation long range of disorderness. The optical properties of the glass system such as refractive index and optical band gap energy are investigated using UV-Vis spectrophotometer. The value of refractive index is found in nonlinear trend along with holmium oxides concentration. It is found that the refractive index is more than 2 at 0.01, 0.03 and 0.04 of holmium concentrations. The optical band gap energy was found in similar trend with refractive index which is in nonlinear pattern.


2013 ◽  
Vol 37 (1) ◽  
pp. 83-91 ◽  
Author(s):  
Chitra Das ◽  
Jahanara Begum ◽  
Tahmina Begum ◽  
Shamima Choudhury

Effect of thickness on the optical and electrical properties of gallium arsenide (GaAs) thin films were studied. The films of different thicknesses were prepared by vacuum evaporation method (~10-4 Pa) on glass substrates at a substrate temperature of 323 K. The film thickness was measured in situ by a frequency shift of quartz crystal. The thicknesses were 250, 300 and 500 nm. Absorption spectrum of this thin film had been recorded using UV-VIS-NIR spectrophotometer in the photon wavelength range of 300 - 2500 nm. The values of some important optical parameters of the studied films (absorption coefficient, optical band gap energy and refractive index; extinction co-efficient and real and imaginary parts of dielectric constant) were determined using these spectra. Transmittance peak was observed in the visible region of the solar spectrum. Here transmittance showed better result when thicknesses were being increased. The optical band gap energy was decreased by the increase of thickness. The refractive index increased by increasing thickness while extinction co-efficient and real and imaginary part of dielectric constant decreased. DOI: http://dx.doi.org/10.3329/jbas.v37i1.15684 Journal of Bangladesh Academy of Sciences, Vol. 37, No. 1, 83-91, 2013


2019 ◽  
Vol 13 ◽  
pp. 102106 ◽  
Author(s):  
Jarnail Singh ◽  
Vikram Verma ◽  
Rajesh Kumar ◽  
Ravi Kumar

2019 ◽  
Vol 6 (8) ◽  
pp. 085039
Author(s):  
Jarnail Singh ◽  
Vikram Verma ◽  
Rajesh Kumar ◽  
Sandeep Sharma ◽  
Ravi Kumar

2014 ◽  
Vol 14 (3) ◽  
pp. 421-427 ◽  
Author(s):  
Deuk Yong Lee ◽  
Ju-Hyun Park ◽  
Young-Hun Kim ◽  
Myung-Hyun Lee ◽  
Nam-Ihn Cho

2002 ◽  
Author(s):  
Takashi Matsuoka ◽  
Masashi Nakao ◽  
Hiroshi Okamoto ◽  
Hiroshi Harima ◽  
Eiji Kurimoto

2015 ◽  
Vol 5 (2) ◽  
pp. 146-154 ◽  
Author(s):  
George Varughese ◽  
P. Jithin ◽  
K. Usha

2012 ◽  
Vol 616-618 ◽  
pp. 1773-1777
Author(s):  
Xi Lian Sun ◽  
Hong Tao Cao

In depositing nitrogen doped tungsten oxide thin films by using reactive dc pulsed magnetron sputtering process, nitrous oxide gas (N2O) was employed instead of nitrogen (N2) as the nitrogen dopant source. The nitrogen doping effect on the structural and optical properties of WO3 thin films was investigated by X-ray diffraction, transmission electron microscopy and UV-Vis spectroscopy. The thickness, refractive index and optical band gap energy of these films have been determined by analyzing the SE spectra using parameterized dispersion model. Morphological images reveal that the films are characterized by a hybrid structure comprising nanoparticles embeded in amorphous matrix and open channels between the agglomerated nanoparticles. Increasing nitrogen doping concentration is found to decrease the optical band gap energy and the refractive index. The reduced band gaps are associated with the N 2p orbital in the N-doped tungsten oxide films.


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