The Optical Performance of Holmium Oxide Doped Tellurite Glass for Potential Optical Fiber

2021 ◽  
Vol 317 ◽  
pp. 95-99
Author(s):  
Muhammad Noorazlan Abd Azis ◽  
Halimah Mohamed Kamari ◽  
Suriani Abu Bakar ◽  
Azlina Yahya ◽  
Umar Saad Aliyu
Keyword(s):  
Refractive Index ◽  
Band Gap ◽  
Tellurite Glass ◽  
Optical Band Gap ◽  
Band Gap Energy ◽  
X Ray Diffraction ◽  
Xrd Pattern ◽  
Gap Energy ◽  
Xrd Method ◽  
Nonlinear Pattern

Borotellurite glass had been widely applied in the field of optical communications and devices. In this work, holmium oxides doped borotellurite glass had been successfully fabricated via conventional melt-quenched technique. The structural properties of holmium doped tellurite glass were found using x-ray diffraction (XRD) method. The nonexistence of sharp peaks in XRD pattern shows that the inclusion of holmium tellurite glass leads to the formation long range of disorderness. The optical properties of the glass system such as refractive index and optical band gap energy are investigated using UV-Vis spectrophotometer. The value of refractive index is found in nonlinear trend along with holmium oxides concentration. It is found that the refractive index is more than 2 at 0.01, 0.03 and 0.04 of holmium concentrations. The optical band gap energy was found in similar trend with refractive index which is in nonlinear pattern.

scholarly journals Effect of thickness on the optical properties of Gaas thin films

2013 ◽  
Vol 37 (1) ◽  
pp. 83-91 ◽  
Author(s):  
Chitra Das ◽  
Jahanara Begum ◽  
Tahmina Begum ◽  
Shamima Choudhury
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Refractive Index ◽  
Band Gap ◽  
Optical Band Gap ◽  
Visible Region ◽  
Solar Spectrum ◽  
Band Gap Energy ◽  
Optical Parameters ◽  
Gap Energy

Effect of thickness on the optical and electrical properties of gallium arsenide (GaAs) thin films were studied. The films of different thicknesses were prepared by vacuum evaporation method (~10-4 Pa) on glass substrates at a substrate temperature of 323 K. The film thickness was measured in situ by a frequency shift of quartz crystal. The thicknesses were 250, 300 and 500 nm. Absorption spectrum of this thin film had been recorded using UV-VIS-NIR spectrophotometer in the photon wavelength range of 300 - 2500 nm. The values of some important optical parameters of the studied films (absorption coefficient, optical band gap energy and refractive index; extinction co-efficient and real and imaginary parts of dielectric constant) were determined using these spectra. Transmittance peak was observed in the visible region of the solar spectrum. Here transmittance showed better result when thicknesses were being increased. The optical band gap energy was decreased by the increase of thickness. The refractive index increased by increasing thickness while extinction co-efficient and real and imaginary part of dielectric constant decreased. DOI: http://dx.doi.org/10.3329/jbas.v37i1.15684 Journal of Bangladesh Academy of Sciences, Vol. 37, No. 1, 83-91, 2013

Effects of Nitrogen Doping on Optical Properties of Tungsten Oxide Thin Films

2012 ◽  
Vol 616-618 ◽  
pp. 1773-1777
Author(s):  
Xi Lian Sun ◽  
Hong Tao Cao
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Optical Properties ◽  
Band Gap ◽  
Tungsten Oxide ◽  
Nitrogen Doping ◽  
Optical Band Gap ◽  
Band Gap Energy ◽  
Gap Energy ◽  
Tungsten Oxide Thin Films

In depositing nitrogen doped tungsten oxide thin films by using reactive dc pulsed magnetron sputtering process, nitrous oxide gas (N2O) was employed instead of nitrogen (N2) as the nitrogen dopant source. The nitrogen doping effect on the structural and optical properties of WO3 thin films was investigated by X-ray diffraction, transmission electron microscopy and UV-Vis spectroscopy. The thickness, refractive index and optical band gap energy of these films have been determined by analyzing the SE spectra using parameterized dispersion model. Morphological images reveal that the films are characterized by a hybrid structure comprising nanoparticles embeded in amorphous matrix and open channels between the agglomerated nanoparticles. Increasing nitrogen doping concentration is found to decrease the optical band gap energy and the refractive index. The reduced band gaps are associated with the N 2p orbital in the N-doped tungsten oxide films.

Optical Properties of Eu3+-Doped Lithium Tellurite Glass

2015 ◽  
Vol 1107 ◽  
pp. 432-436 ◽  
Author(s):  
Siti Aishah Jupri ◽  
Md Rahim Sahar ◽  
Sib Krishna Ghoshal
Keyword(s):  
Band Gap ◽  
Tellurite Glass ◽  
Optical Band Gap ◽  
Urbach Energy ◽  
Glass Network ◽  
Band Gap Energy ◽  
Melt Quenching ◽  
Absorption Properties ◽  
Gap Energy ◽  
Controlled Doping

Improving the optical response of tellurite glasses via controlled doping of rare earth is the key issue in lasing materials. A series of glasses of the form (74.4-x)TeO2(4.3)Li2O(21.3)LiCl (x)Eu2O3 with 0.0 x 2.0 mol% are synthesized using melt-quenching technique and the influence of Eu2O3 content on their UV-Vis absorption properties are examined. The absorption spectra reveal two prominent peaks centered at 464 and 533 nm corresponding to 7F05D2 and 7F15D1 transitions, respectively. The optical band gap energy for direct and indirect transitions are found to be in the range of 3.294-3.173 eV and 3.067-2.971 eV, respectively. The decrease optical band gap energy with the increase of Eu2O3 contents is attributed to the generation of non-bridging oxygen (NBOs). The increase in Urbach energy from 0.226-0.308 eV with the increase of Eu2O3 contents signifies the variation in disorder and compactness of the glass network.

Optical Properties of Undoped and Dy3+-Doped Boro-Tellurite Glass

2014 ◽  
Vol 895 ◽  
pp. 194-199 ◽  
Author(s):  
Atiqah Ab Rasid ◽  
Husin Wagiran ◽  
Suhairul Hashim ◽  
Rosli Hussin ◽  
Zuhairi Ibrahim
Keyword(s):  
Optical Properties ◽  
Band Gap ◽  
Tellurite Glass ◽  
Optical Band Gap ◽  
Band Gap Energy ◽  
Excitation Wavelength ◽  
Absorption Bands ◽  
Gap Energy ◽  
Vis Spectroscopy ◽  
Doped Glasses

A series of undoped and Dy3+-doped boro-tellurite glasses were prepared, and their optical properties have been studied through XRD, absorption, optical band gap energy and photoluminescence. The XRD pattern has been used to confirm the amorphous nature of the prepared glass. The optical absorption spectra showed eight absorption bands which corresponded to 4I15/2, 4F9/2, 6F3/2, 6F5/2, 6F7/2, 6F9/2, 6F11/2 and 6H11/2 transitions from the ground state, 6H15/2. The optical band gap energy, Eopt for undoped glass was 3.08 eV and the Dy3+-doped glasses Eopt values varied from 3.16 3.24 eV. The emission spectra from photoluminescence spectroscopy showed two dominant emission peaks at 483 nm and 574 nm with an excitation wavelength of 325 nm (3.82 eV). Keywords: X-ray diffraction, boro-tellurite glass, photoluminescence, absorption spectrum, UV-Vis spectroscopy, energy band gap.

Nitrogen Concentrations on Structural and Optical Properties of Aluminum Nitride Films Deposited by Reactive RF-Magnetron Sputtering

2013 ◽  
Vol 631-632 ◽  
pp. 186-191
Author(s):  
Amorn Thedsakhulwong ◽  
Kitsakorn Locharoenrat ◽  
Warawoot Thowladda
Keyword(s):  
Refractive Index ◽  
Aluminum Nitride ◽  
Magnetron Sputtering ◽  
Band Gap ◽  
Optical Band Gap ◽  
Nitrogen Concentration ◽  
Rf Magnetron Sputtering ◽  
Band Gap Energy ◽  
Gap Energy ◽  
Nitrogen Concentrations

We have fabricated Aluminum Nitride (AlN) films on the quartz substrates using RF-reactive magnetron sputtering method. The conditions of the films have been performed under different concentration ratios between nitrogen and argon. We have found that all obtained films were transparent in visible wavelength. By using X-ray diffraction (XRD) technique, it was found that the (002), (102) and (103) orientations were shown in XRD patterns. The (002) orientation was dominant when nitrogen concentration (CN) was at 40%. On the other hand, the refractive index and optical band gap energy of the films were determined as a function of CN. We have found that the refractive index weakly depended on CN, while optical band gap energy did not.

Effect of Detergent on the ZnO Nanorods Structures Synthesized via the Sol-Gel Method

2012 ◽  
Vol 545 ◽  
pp. 161-164
Author(s):  
Rusdi Roshidah ◽  
Abd Rahman Azilah ◽  
Norlida Kamarulzaman
Keyword(s):  
Band Gap ◽  
Optical Band Gap ◽  
Inorganic Material ◽  
Sol Gel ◽  
Zno Nanorods ◽  
Band Gap Energy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gap Energy ◽  
Thermogravimetric Analyzer

ZnO is known as an inorganic material that has a variety of morphologies. The morphologies of the ZnO are much influenced by the synthesis route. In this work, two ZnO nanomaterials were prepared by the sol-gel route and the effect of detergent on the morphology and optical band gap of ZnO materials were investigated. The synthesized ZnO materials were characterized using Simultaneous Thermogravimetric Analyzer (STA), X-ray Diffraction (XRD) and Field Emission Scanning Electron Microscope (FESEM). The UV-Vis spectrophotometer is used to determine the optical band gap. The results show that the presence of detergent affected the morphology of the ZnO from nanorods to nano-flakes. The band gap energy of the ZnO were also reduced from 3.14 ev to 2.98 eV from the nanorod to the nanoflakes.

Modification of optical properties of PC-PBT/Cr2O3 and PC-PBT/CdS nanocomposites by gamma irradiation

2020 ◽  
Vol 92 (2) ◽  
pp. 20402
Author(s):  
Kaoutar Benthami ◽  
Mai ME. Barakat ◽  
Samir A. Nouh
Keyword(s):  
Refractive Index ◽  
Optical Properties ◽  
Band Gap ◽  
Color Difference ◽  
Band Gap Energy ◽  
Polybutylene Terephthalate ◽  
Γ Irradiation ◽  
Gap Energy ◽  
Vis Spectroscopy ◽  
Oxygen Atoms

Nanocomposite (NCP) films of polycarbonate-polybutylene terephthalate (PC-PBT) blend as a host material to Cr2O3 and CdS nanoparticles (NPs) were fabricated by both thermolysis and casting techniques. Samples from the PC-PBT/Cr2O3 and PC-PBT/CdS NCPs were irradiated using different doses (20–110 kGy) of γ radiation. The induced modifications in the optical properties of the γ irradiated NCPs have been studied as a function of γ dose using UV Vis spectroscopy and CIE color difference method. Optical dielectric loss and Tauc's model were used to estimate the optical band gaps of the NCP films and to identify the types of electronic transition. The value of optical band gap energy of PC-PBT/Cr2O3 NCP was reduced from 3.23 to 3.06 upon γ irradiation up to 110 kGy, while it decreased from 4.26 to 4.14 eV for PC-PBT/CdS NCP, indicating the growth of disordered phase in both NCPs. This was accompanied by a rise in the refractive index for both the PC-PBT/Cr2O3 and PC-PBT/CdS NCP films, leading to an enhancement in their isotropic nature. The Cr2O3 NPs were found to be more effective in changing the band gap energy and refractive index due to the presence of excess oxygen atoms that help with the oxygen atoms of the carbonyl group in increasing the chance of covalent bonds formation between the NPs and the PC-PBT blend. Moreover, the color intensity, ΔE has been computed; results show that both the two synthesized NCPs have a response to color alteration by γ irradiation, but the PC-PBT/Cr2O3 has a more response since the values of ΔE achieved a significant color difference >5 which is an acceptable match in commercial reproduction on printing presses. According to the resulting enhancement in the optical characteristics of the developed NCPs, they can be a suitable candidate as activate materials in optoelectronic devices, or shielding sheets for solar cells.

Stability Investigation in the Optical Properties of Thermally Evaporated Ge5Se95-x Znx Thin Films

2015 ◽  
Vol 7 (3) ◽  
pp. 1923-1930
Author(s):  
Austine Amukayia Mulama ◽  
Julius Mwakondo Mwabora ◽  
Andrew Odhiambo Oduor ◽  
Cosmas Mulwa Muiva ◽  
Boniface Muthoka ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Thermal Evaporation ◽  
Optical Transition ◽  
Bulk Material ◽  
Band Gap Energy ◽  
Optical Absorbance ◽  
Gap Energy ◽  
Constituent Elements

 Selenium-based chalcogenides are useful in telecommunication devices like infrared optics and threshold switching devices. The investigated system of Ge5Se95-xZnx (0.0 ≤ x ≤ 4 at.%) has been prepared from high purity constituent elements. Thin films from the bulk material were deposited by vacuum thermal evaporation. Optical absorbance measurements have been performed on the as-deposited thin films using transmission spectra. The allowed optical transition was found to be indirect and the corresponding band gap energy determined. The variation of optical band gap energy with the average coordination number has also been investigated based on the chemical bonding between the constituents and the rigidity behaviour of the system’s network.

scholarly journals Polymer Thermal Treatment Production of Cerium Doped Willemite Nanoparticles: An Analysis of Structure, Energy Band Gap and Luminescence Properties

Materials ◽  
2021 ◽  
Vol 14 (5) ◽  
pp. 1118
Author(s):  
Ibrahim Mustapha Alibe ◽  
Khamirul Amin Matori ◽  
Mohd Hafiz Mohd Zaid ◽  
Salisu Nasir ◽  
Ali Mustapha Alibe ◽  
...  
Keyword(s):  
Solid State ◽  
Thermal Treatment ◽  
Band Gap ◽  
Optical Band Gap ◽  
Dopant Concentration ◽  
Blue Emission ◽  
Green Emission ◽  
Band Gap Energy ◽  
Solid State Lighting ◽  
Gap Energy

The contemporary market needs for enhanced solid–state lighting devices has led to an increased demand for the production of willemite based phosphors using low-cost techniques. In this study, Ce3+ doped willemite nanoparticles were fabricated using polymer thermal treatment method. The special effects of the calcination temperatures and the dopant concentration on the structural and optical properties of the material were thoroughly studied. The XRD analysis of the samples treated at 900 °C revealed the development and or materialization of the willemite phase. The increase in the dopant concentration causes an expansion of the lattice owing to the replacement of larger Ce3+ ions for smaller Zn2+ ions. Based on the FESEM and TEM micrographs, the nanoparticles size increases with the increase in the cerium ions. The mean particles sizes were estimated to be 23.61 nm at 1 mol% to 34.02 nm at 5 mol% of the cerium dopant. The optical band gap energy of the doped samples formed at 900 °C decreased precisely by 0.21 eV (i.e., 5.21 to 5.00 eV). The PL analysis of the doped samples exhibits a strong emission at 400 nm which is ascribed to the transition of an electron from localized Ce2f state to the valence band of O2p. The energy level of the Ce3+ ions affects the willemite crystal lattice, thus causing a decrease in the intensity of the green emission at 530 nm and the blue emission at 485 nm. The wide optical band gap energy of the willemite produced is expected to pave the way for exciting innovations in solid–state lighting applications.

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