High-speed Epitaxial Growth of (110) SrTiO3 Films on (110) MgAl2O4 Substrates using Laser Chemical Vapour Deposition

Doping of nitrogen is a promising approach to improve the electrical conductivity of 3C-SiC and allow its application in various fields. N-doped, <110>-oriented 3C-SiC bulks with different doping concentrations were prepared via halide laser chemical vapour deposition (HLCVD) using tetrachlorosilane (SiCl4) and methane (CH4) as precursors, along with nitrogen (N2) as a dopant. We investigated the effect of the volume fraction of nitrogen (ϕN2) on the preferred orientation, microstructure, electrical conductivity (σ), deposition rate (Rdep), and optical transmittance. The preference of 3C-SiC for the <110> orientation increased with increasing ϕN2. The σ value of the N-doped 3C-SiC bulk substrates first increased and then decreased with increasing ϕN2, reaching a maximum value of 7.4 × 102 S/m at ϕN2 = 20%. Rdep showed its highest value (3000 μm/h) for the undoped sample and decreased with increasing ϕN2, reaching 1437 μm/h at ϕN2 = 30%. The transmittance of the N-doped 3C-SiC bulks decreased with ϕN2 and showed a declining trend at wavelengths longer than 1000 nm. Compared with the previously prepared <111>-oriented N-doped 3C-SiC, the high-speed preparation of <110>-oriented N-doped 3C-SiC bulks further broadens its application field.

Download Full-text

Influence of the substrate bias on epitaxial growth of Si films by dc-discharge plasma chemical vapour deposition

Semiconductor Science and Technology ◽

10.1088/0268-1242/13/12/016 ◽

1998 ◽

Vol 13 (12) ◽

pp. 1426-1430 ◽

Cited By ~ 1

Author(s):

E Mateeva ◽

P Sutter

Keyword(s):

Epitaxial Growth ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Discharge Plasma ◽

Chemical Vapour ◽

Substrate Bias ◽

Plasma Chemical ◽

Dc Discharge ◽

Plasma Chemical Vapour Deposition ◽

Si Films

Download Full-text

Epitaxial growth of gallium arsenide prepared by low-pressure metal-organic chemical vapour deposition at low temperatures

Canadian Journal of Physics ◽

10.1139/p92-141 ◽

1992 ◽

Vol 70 (10-11) ◽

pp. 893-897

Author(s):

C. Aktik ◽

J. Beerens ◽

S. Blain ◽

A. Bsiesy

Keyword(s):

Gallium Arsenide ◽

Epitaxial Growth ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Deep Level ◽

Chemical Vapour ◽

Low Pressure ◽

Organic Chemical ◽

Carbon Incorporation ◽

Metal Organic

The low-pressure metal-organic chemical vapour deposition (LPMOCVD) technique has been investigated previously as a growth method for compound semiconductors, offering the possibility of selective epitaxy and the potential advantage of better controllability for changing the doping level and the alloy composition. Low-temperature growth is also desirable to reduce the carbon incorporation generated by the decomposition of the organic radicals. In this article we report for the first time the epitaxial growth of gallium arsenide (GaAs) by LPMOCVD at temperatures as low as 510 °C. The vertical reactor that was developed by the authors employs conventional precursors such as trimethylgallium and arsine. By carefully choosing the growth parameters, we were able to grow high-quality GaAs epilayers with good surface morphology at temperatures as low as 510 °C. The carbon incorporation is shown to decrease with decreasing growth temperature without deterioration of the film quality. By carefully controlling the purity of the sources and the gas flow dynamics, we reduced the deep level impurity concentration and obtained reproducible n-type material with residual net donor concentration of 4.4 × 1014 cm−3 and mobility of 92 000 cm2 V−1 s−1 at 77 K.

Download Full-text