scholarly journals Study of the optical properties of poly (methyl methacrylate) (PMMA) by using spin coating method

Author(s):  
Lamis Faaz Nassier ◽  
Mohammed Hadi Shinen
2021 ◽  
Vol 16 (6) ◽  
pp. 967-973
Author(s):  
Shuai Zhao ◽  
Dong-Xue Lin ◽  
Yu-Xin Wang

All of the TiO2 films including intrinsic TiO2 film, Zn single doped film with 2.0 at% content and N doped films with 4.0 at%, 6.0 at%, 8.0 at% and 10.0 at% content, were obtained by butyl titanate (Ti(OC4H9)4) as a titanium source, zinc nitrate (Zn(NO3)2·6H2O) as zinc source and urea (H2 NCONH2) as nitrogen source, which was calcined at 600 °C on the glass substrate and Si substrate using sol–gel spin coating method. The structures, morphology and optical properties of various films were analyzed and studied by X ray diffract meter (XRD), ultraviolet-visible spectrophotometer (UV-Vis) and scanning electron microscope (SEM). The results indicated that the main crystal plane of TiO2 film was (101) and any impurity crystal plane didn't appear. All samples had obvious red shifts in the absorbing edge overall and reduced significantly the width of forbidden band, especially, the N doping content with 8.0 at% was surprised to investigate the strongest (101) peak intensity, the sharpest peak type, the best meritocratic orientation, the greatest red shift of the absorption spectrum, the lowest optical band gap value of 3.356 eV, and the highest utilization rate of visible light of the sample. However, the surface morphology of the others films except the N doping content with 8.0 at% is not further improved by co-doping, that is, their surfaces were still rough, had obvious voids and uneven distribution between the grains. Meanwhile, the intensity of the (101) crystalline diffraction peaks of these samples were reduced and the crystalline spacing generally increased after co-doping.


2016 ◽  
Vol 12 (3) ◽  
pp. 224
Author(s):  
R. K. Alfahed ◽  
K. I. Ajeel ◽  
A. K. Hassan

Preparation of poly (o-toluidine) was doped by different volume ratios of cobalt chloride and characterized by (FT-IR, XRD and SEM). The results showed that the intensity of absorption increased while energy gaps of the prepared polymer decreased with respect to increasing ratio of the dopant where the direct and indirect energy gaps were calculated, in addition to edge of the absorption. Photovoltaic device was fabricated by deposit the prepared polymer on the n-type silicon by spin coating method, so the batter efficiency of the prepared devices was 3.02% which was tested under dark and illumination with intensity of 100mW/cm².


2019 ◽  
Vol 21 (9) ◽  
pp. 5253-5261 ◽  
Author(s):  
Alonso W. P. Sanches ◽  
Marco A. T. da Silva ◽  
Neusmar J. A. Cordeiro ◽  
Alexandre Urbano ◽  
Sidney A. Lourenço

Intermediate phases in the methylammonium lead halide perovskite (CH3NH3PbI3) films produced by the two-step spin coating method.


2021 ◽  
Vol 63 (8) ◽  
pp. 778-782
Author(s):  
Tülay Yıldız ◽  
Nida Katı ◽  
Kadriye Yalçın

Abstract In this study, undoped semiconductor ZnO thin film and Bi-doped ZnO thin films were produced using the sol-gel spin coating method. By changing each parameter of the spin coating method, the best conditions for the formation of the film were determined via the trial and error method. When the appropriate parameter was found, the specified parameter was applied for each film. The structural, superficial, and optical properties of the films produced were characterized via atomic force microscope (AFM), UV-visible spectroscopy, and Fourier transform infrared (FTIR), and the effects of Bi dopant on these properties were investigated. When the morphological properties of the undoped and Bi-doped ZnO films were examined, it was observed that they had a structure in a micro-fiber shape consisting of nanoparticles. When the surface roughness was examined, it was observed that the surface roughness values became larger as the rate of Bi dopant increased. By examining the optical properties of the films, it was determined that they were direct band transition materials and Bi-doped thin films were involved in the semiconductor range. In addition, optical properties changed positively with Bi dopant. Since Bi-doped ZnO thin film has a wide bandgap and good optical properties, it is a material that can be used in optoelectronic applications.


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