Investigation of simultaneous fluorine and carbon incorporation in a silicon oxide dielectric layer grown by PECVD

2005 ◽  
Vol 80 ◽  
pp. 42-45 ◽  
Author(s):  
S. Altshuler ◽  
Y. Chakk ◽  
A. Rozenblat ◽  
A. Cohen
Keyword(s):  
Dielectric Layer ◽  
Silicon Oxide ◽  
Carbon Incorporation

scholarly journals The effects of carbon incorporation on the refractive index of PECVD silicon oxide layers

AIP Advances ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 045331
Author(s):  
Benjamin Torda ◽  
Lazhar Rachdi ◽  
Asmaa Mohamed Okasha Mohamed Okasha ◽  
Pierre Saint-Cast ◽  
Marc Hofmann
Keyword(s):  
Refractive Index ◽  
Silicon Oxide ◽  
Carbon Incorporation ◽  
Oxide Layers

scholarly journals Cathodic electroorganic reaction on silicon oxide dielectric electrode

2020 ◽  
Vol 117 (52) ◽  
pp. 32939-32946
Author(s):  
Samuel J. Shin ◽  
Sangmee Park ◽  
Jin-Young Lee ◽  
Jae Gyeong Lee ◽  
Jeongse Yun ◽  
...  
Keyword(s):  
Hydrogen Atom ◽  
Dielectric Layer ◽  
Organic Molecules ◽  
Silicon Oxide ◽  
Oxide Surface ◽  
Cathodic Reaction ◽  
Potential Bias ◽  
Synthetic Strategy ◽  
Divided Cell ◽  
Faradaic Reaction

The faradaic reaction at the insulator is counterintuitive. For this reason, electroorganic reactions at the dielectric layer have been scarcely investigated despite their interesting aspects and opportunities. In particular, the cathodic reaction at a silicon oxide surface under a negative potential bias remains unexplored. In this study, we utilize defective 200-nm-thick n+-Si/SiO2 as a dielectric electrode for electrolysis in an H-type divided cell to demonstrate the cathodic electroorganic reaction of anthracene and its derivatives. Intriguingly, the oxidized products are generated at the cathode. The experiments under various conditions provide consistent evidence supporting that the electrochemically generated hydrogen species, supposedly the hydrogen atom, is responsible for this phenomenon. The electrogenerated hydrogen species at the dielectric layer suggests a synthetic strategy for organic molecules.

Carbon Incorporation during the Dielectric Breakdown Process of Silicon Oxide

1997 ◽  
Vol 25 (2) ◽  
pp. 94-98 ◽  
Author(s):  
O. Najmi ◽  
I. Montero ◽  
L. Galán ◽  
J. M. Albella
Keyword(s):  
Silicon Oxide ◽  
Dielectric Breakdown ◽  
Carbon Incorporation ◽  
Breakdown Process

Analytical Electron Microscopy Study of Second-Phase Particles in 7075 and 7475 Aluminum Alloys

1985 ◽  
Vol 43 ◽  
pp. 348-349
Author(s):  
M. Raghavan ◽  
J. Y. Koo ◽  
J. W. Steeds ◽  
B. K. Park
Keyword(s):  
Aluminum Alloys ◽  
Silicon Oxide ◽  
Analytical Electron Microscopy ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Partial Substitution ◽  
Second Phase ◽  
X Ray ◽  
Second Phase Particles ◽  
Almost All

X-ray microanalysis and Convergent Beam Electron Diffraction (CBD) studies were conducted to characterize the second phase particles in two commercial aluminum alloys -- 7075 and 7475. The second phase particles studied were large (approximately 2-5μm) constituent phases and relatively fine ( ∼ 0.05-1μn) dispersoid particles, Figures 1A and B. Based on the crystal structure and chemical composition analyses, the constituent phases found in these alloys were identified to be Al7Cu2Fe, (Al,Cu)6(Fe,Cu), α-Al12Fe3Si, Mg2Si, amorphous silicon oxide and the modified 6Fe compounds, in decreasing order of abundance. The results of quantitative X-ray microanalysis of all the constituent phases are listed in Table I. The data show that, in almost all the phases, partial substitution of alloying elements occurred resulting in small deviations from the published stoichiometric compositions of the binary and ternary compounds.

LVSEM: Past Present and Future

1990 ◽  
Vol 48 (1) ◽  
pp. 364-365
Author(s):  
James B. Pawley
Keyword(s):  
Field Emission ◽  
Line Width ◽  
Time Scales ◽  
Silicon Oxide ◽  
Beam Current ◽  
High Brightness ◽  
High Beam ◽  
Fixed Charges ◽  
Beam Voltage ◽  
Deposited Metal

Past: In 1960 Thornley published the first description of SEM studies carried out at low beam voltage (LVSEM, 1-5 kV). The aim was to reduce charging on insulators but increased contrast and difficulties with low beam current and frozen biological specimens were also noted. These disadvantages prevented widespread use of LVSEM except by a few enthusiasts such as Boyde. An exception was its use in connection with studies in which biological specimens were dissected in the SEM as this process destroyed the conducting films and produced charging unless LVSEM was used.In the 1980’s field emission (FE) SEM’s came into more common use. The high brightness and smaller energy spread characteristic of the FE-SEM’s greatly reduced the practical resolution penalty associated with LVSEM and the number of investigators taking advantage of the technique rapidly expanded; led by those studying semiconductors. In semiconductor research, the SEM is used to measure the line-width of the deposited metal conductors and of the features of the photo-resist used to form them. In addition, the SEM is used to measure the surface potentials of operating circuits with sub-micrometer resolution and on pico-second time scales. Because high beam voltages destroy semiconductors by injecting fixed charges into silicon oxide insulators, these studies must be performed using LVSEM where the beam does not penetrate so far.

Shock compaction of aluminium-magnesium-silicon-oxide spheres

1997 ◽  
Vol 53 (7-8) ◽  
pp. 38
Author(s):  
P Zivanovic
Keyword(s):  
Silicon Oxide ◽  
Shock Compaction

G Optimal Design in Non linear Models to Increase Silicon Oxide Purity Levels and Electrical Conductivity

2018 ◽  
pp. 150-155
Author(s):  
Muklas Rivai
Keyword(s):  
Electrical Conductivity ◽  
Optimal Design ◽  
Linear Models ◽  
Silicon Oxide ◽  
Information Matrix ◽  
Relevant Information ◽  
Non Linear

Optimal design is a design which required in determining the points of variable factors that would be attempted to optimize the relevant information so that fulfilled the desired criteria. The optimal fulfillment criteria based on the information matrix of the selected model.

Nano-sized Light Emitting Structure through Silicon Oxide Pattern Process

2020 ◽  
Vol 4 (5) ◽  
pp. 495-500
Author(s):  
Je Won Kim ◽  
Keyword(s):  
Silicon Oxide ◽  
Light Emitting
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