Phase Change Memory: Device scaling and challenges for material engineering in the GeSbTe compound system

2015 ◽  
Vol 137 ◽  
pp. 1-4 ◽  
Author(s):  
Mattia Boniardi ◽  
Andrea Redaelli
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Memory Device ◽  
Compound System ◽  
Device Scaling ◽  
Material Engineering ◽  
Change Memory

Ultra-Multilevel-Storage Phase Change Memory

2014 ◽  
Vol 936 ◽  
pp. 599-602
Author(s):  
You Yin ◽  
Sumio Hosaka
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Single Layer ◽  
Programming Method ◽  
Promising Method ◽  
Device Structure ◽  
Material Engineering ◽  
Structure Reliability ◽  
Multilevel Storage ◽  
Change Memory

In this study, we investigated ultra-multilevel-storage (UMLS) in lateral phase change memory (PCM) on the basis of device structure, reliability and programming method. We found that the number of resistance levels was limited strictly by the number of PC layers in multilayer multilevel cell (ML-MLC). A number of distinct levels up to 16 were obtained using a simple single-layer multilevel cell (SL-MLC). And material engineering is expected to greatly improve the reliability of MLS. We believe that fast-freely-achievable (FFA)-MLC by stair-like-pulse programming is a very promising method for futures application.

scholarly journals Thermal investigation of a phase change memory device at the nanoscale

2016 ◽  
Vol 745 ◽  
pp. 032098
Author(s):  
Jean-Luc Battaglia ◽  
Indrayush De ◽  
Abdelhak Saci ◽  
Andrzej Kusiak ◽  
Véronique Sousa
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Memory Device ◽  
Thermal Investigation ◽  
Change Memory

Global and local structures of the Ge-Sb-Te ternary alloy system for a phase-change memory device

2006 ◽  
Vol 73 (21) ◽  
Author(s):  
Jae-Hyeon Eom ◽  
Young-Gui Yoon ◽  
Changwon Park ◽  
Hoonkyung Lee ◽  
Jino Im ◽  
...  
Keyword(s):  
Phase Change ◽  
Ternary Alloy ◽  
Phase Change Memory ◽  
Alloy System ◽  
Memory Device ◽  
Ternary Alloy System ◽  
Local Structures ◽  
Global And Local ◽  
Change Memory

High performance of multilevel-cell phase change memory device with good endurance reliability

2019 ◽  
Vol 34 (10) ◽  
pp. 105019
Author(s):  
Yuan-Guang Liu ◽  
Yi-Feng Chen ◽  
Dao-Lin Cai ◽  
Yao-Yao Lu ◽  
Lei Wu ◽  
...  
Keyword(s):  
Phase Change ◽  
High Performance ◽  
Phase Change Memory ◽  
Memory Device ◽  
Change Memory

Lower Power and Higher Speed Operations of Phase-Change Memory Device Using Antimony Selenide (SbxSe1-x)

2005 ◽  
Author(s):  
Sung-Min Yoon ◽  
Nam-Yeal Lee ◽  
Sang-Ouk Ryu ◽  
Kyu-Jeong Choi ◽  
Young-Sam Park ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Memory Device ◽  
Lower Power ◽  
Antimony Selenide ◽  
Change Memory

scholarly journals An overview of phase-change memory device physics

2020 ◽  
Vol 53 (21) ◽  
pp. 213002 ◽  
Author(s):  
Manuel Le Gallo ◽  
Abu Sebastian
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Memory Device ◽  
Device Physics ◽  
Change Memory
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