Ultra-Multilevel-Storage Phase Change Memory

2014 ◽  
Vol 936 ◽  
pp. 599-602
Author(s):  
You Yin ◽  
Sumio Hosaka
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Single Layer ◽  
Programming Method ◽  
Promising Method ◽  
Device Structure ◽  
Material Engineering ◽  
Structure Reliability ◽  
Multilevel Storage ◽  
Change Memory

In this study, we investigated ultra-multilevel-storage (UMLS) in lateral phase change memory (PCM) on the basis of device structure, reliability and programming method. We found that the number of resistance levels was limited strictly by the number of PC layers in multilayer multilevel cell (ML-MLC). A number of distinct levels up to 16 were obtained using a simple single-layer multilevel cell (SL-MLC). And material engineering is expected to greatly improve the reliability of MLS. We believe that fast-freely-achievable (FFA)-MLC by stair-like-pulse programming is a very promising method for futures application.

Programming margin enlargement by material engineering for multilevel storage in phase-change memory

2009 ◽  
Vol 95 (13) ◽  
pp. 133503 ◽  
Author(s):  
You Yin ◽  
Tomoyuki Noguchi ◽  
Hiroki Ohno ◽  
Sumio Hosaka
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Material Engineering ◽  
Multilevel Storage ◽  
Change Memory

Random-Access Multilevel Storage in Phase Change Memory by Staircase-Like Pulse Programming

2011 ◽  
Vol 497 ◽  
pp. 111-115
Author(s):  
Ryota Kobayashi ◽  
Tomoyuki Noguchi ◽  
You Yin ◽  
Sumio Hosaka
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Random Access ◽  
Experimental Results ◽  
Device Resistance ◽  
Multilevel Storage ◽  
Simulation Results ◽  
Change Memory

We have investigated random-access multilevel storage in phase change memory by staircase-like pulse programming. Staircase-like pulse consists of first sub-pulse and second sub-pulse. Our simulation exhibited that any resistance levels are expected to be randomly accessed by controlling the crystallization with different widths of second sub-pulset2. Based on the simulation results, we did experiment on staircase-like pulse programming. Experimental results showed that the device resistance gradually increased with reducing second sub-pulset2to 0 ns. In other words, random access to any resistance levels was demonstrated to be possible simply by changingt2.

Novel device structure for phase change memory toward low-current operation

2015 ◽  
Vol 54 (9) ◽  
pp. 094302 ◽  
Author(s):  
Eunha Kim ◽  
Nam Soo Kang ◽  
Hyung-Jun Yang ◽  
Yuji Sutou ◽  
Yun-Heub Song
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Device Structure ◽  
Novel Device ◽  
Current Operation ◽  
Change Memory

Effect of a separate heater structure for crystallisation to enable multilevel storage phase-change memory

2014 ◽  
Vol 11 (5/6/7/8) ◽  
pp. 389
Author(s):  
Rosalena Irma Alip ◽  
Zulfakri Mohamad ◽  
You Yin ◽  
Sumio Hosaka
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Multilevel Storage ◽  
Change Memory

Multilevel Storage in Lateral Top-Heater Phase-Change Memory

2008 ◽  
Vol 29 (8) ◽  
pp. 876-878 ◽  
Author(s):  
You Yin ◽  
Kazuhiro Ota ◽  
Naoya Higano ◽  
Hayato Sone ◽  
Sumio Hosaka
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Multilevel Storage ◽  
Change Memory
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