Full-band Monte Carlo simulation of thin InP p+–i–n+ diodes

Microelectronics Journal ◽

10.1016/j.mejo.2004.10.002 ◽

2005 ◽

Vol 36 (1) ◽

pp. 61-65 ◽

Author(s):

A.H. You ◽

D.S. Ong

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

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Electron transport analysis of 4H-SiC with full-band Monte Carlo simulation including real-space Coulomb interactions

Journal of Applied Physics ◽

10.1063/1.5144214 ◽

2020 ◽

Vol 127 (15) ◽

pp. 155702 ◽

Author(s):

Chi-Yin Cheng ◽

Dragica Vasileska

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Electron Transport ◽

Coulomb Interactions ◽

Full Band ◽

Transport Analysis

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Comparison between wurtzite phase and zincblende phase GaN MESFETs using a full band Monte Carlo simulation

IEEE Transactions on Electron Devices ◽

10.1109/16.824713 ◽

2000 ◽

Vol 47 (3) ◽

pp. 493-497 ◽

Author(s):

M. Farahmand ◽

K.F. Brennan

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Wurtzite Phase ◽

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Influence of Surface Roughness on Ge Gate-All-Around Nanowire nMOSFETs by 3D Full Band Monte Carlo Simulation

10.7567/ssdm.2011.p-3-19 ◽

2011 ◽

Author(s):

K. L. Wei ◽

X. Y. Liu ◽

G. Du

Keyword(s):

Surface Roughness ◽

Monte Carlo Simulation ◽

Monte Carlo ◽

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Investigation of temperature effects on electron transport in SiC using unique full band Monte Carlo simulation

2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497) ◽

10.1109/isdrs.2001.984566 ◽

2002 ◽

Author(s):

G. Pennington ◽

N. Goldsman ◽

S. Scozzie ◽

J.M. McGarrity ◽

B. McLean

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Electron Transport ◽

Temperature Effects ◽

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Investigation of the local force approximation in numerical device simulation by full-band Monte Carlo simulation

7th International Workshop on Computational Electronics. Book of Abstracts. IWCE (Cat. No.00EX427) ◽

10.1109/iwce.2000.869942 ◽

2002 ◽

Author(s):

C. Jungemann ◽

B. Neinhus ◽

B. Meinerzhagen

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Device Simulation ◽

Full Band ◽

Numerical Device

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Full band Monte Carlo simulation of zincblende GaN MESFET's including realistic impact ionization rates

IEEE Transactions on Electron Devices ◽

10.1109/16.772471 ◽

1999 ◽

Vol 46 (7) ◽

pp. 1319-1325 ◽

Author(s):

M. Farahmand ◽

K.F. Brennan

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Impact Ionization ◽

Full Band ◽

Ionization Rates

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Scaling properties of GOI MOSFETs in naon scale by full band Monte Carlo simulation

Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004. ◽

10.1109/icsict.2004.1436736 ◽

2005 ◽

Author(s):

G. Du X.Y. Liu

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Scaling Properties ◽

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Full-Band Monte Carlo Simulation of Electron Transport in 3C-SiC

Materials Science Forum ◽

10.4028/www.scientific.net/msf.389-393.537 ◽

2002 ◽

Vol 389-393 ◽

pp. 537-540 ◽

Author(s):

H.-E. Nilsson ◽

U. Englund ◽

M. Hjelm

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Electron Transport ◽

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Ionized impurity scattering rate for full band Monte Carlo simulation in heavily dopedn‐type silicon

Journal of Applied Physics ◽

10.1063/1.361122 ◽

1996 ◽

Vol 79 (5) ◽

pp. 2559-2565 ◽

Author(s):

H. K. Jung ◽

H. Ohtsuka ◽

K. Taniguchi ◽

C. Hamaguchi

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Impurity Scattering ◽

Type Silicon ◽

Scattering Rate ◽

Ionized Impurity Scattering ◽

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Full-band Monte Carlo simulation of single photon avalanche diodes

2013 IEEE Photonics Conference ◽

10.1109/ipcon.2013.6656586 ◽

2013 ◽

Author(s):

Denis Dolgos ◽

Hektor Meier ◽

Andreas Schenk ◽

Bernd Witzigmann

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Single Photon ◽

Avalanche Diodes ◽

Full Band ◽

Single Photon Avalanche Diodes

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