Microstructure and ferroelectric properties of r.f. magnetron sputtering derived PZT thin films deposited on interlayer (PbO/TiO2)

2005 ◽  
Vol 80 (2) ◽  
pp. 201-206 ◽  
Author(s):  
Chul-Ho Park ◽  
Young-Gook Son ◽  
Mi-Sook Won
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Ferroelectric Properties ◽  
Pzt Thin Films

The Effect of RuO2/Pt Hybrid Bottom Electrode Structure on The Microstructure and Ferroelectric Properties of Sol-Gel Derived PZT Thin Films

1997 ◽  
Vol 493 ◽  
Author(s):  
Seung-Hyun Kim ◽  
J. G. Hong ◽  
J. C. Gunter ◽  
H. Y. Lee ◽  
S. K. Streiffer ◽  
...  
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Bottom Electrode ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Chemical Solution ◽  
Electrode Structure ◽  
Solution Deposition ◽  
Pzt Thin Films ◽  
Chemical Solution Deposition Method

ABSTRACTFerroelectric PZT thin films on thin RuO2 (10, 30, 50nm)/Pt hybrid bottom electrodes were successfully prepared by using a modified chemical solution deposition method. It was observed that the use of a lOnm RuO2Pt bottom electrode reduced leakage current, and gave more reliable capacitors with good microstructure compare to the use of thicker RuO2/Pt bottom electrodes. Typical P-E hysteresis behavior was observed even at an applied voltage of 3V, demonstrating greatly improved remanence and coercivity. Fatigue and breakdown characteristics, measured at 5V, showed stable behavior, and only below 13-15% degradation was observed up to 1010 cycles. Thicker RuO2 layers resulted in high leakage current density due to conducting lead ruthenate or PZT pyrochlore-ruthenate and a rosette-type microstructure.

Post-Processing of Pulsed Laser-Deposited Pzt Thin Films

1991 ◽  
Vol 243 ◽  
Author(s):  
C. K. Chiang ◽  
W. Wong-Ng ◽  
L. P. Cook ◽  
P. K. Schenck ◽  
H. M. Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Amorphous Material ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Linear Shrinkage ◽  
Laser Deposition ◽  
Amorphous Films ◽  
Pzt Thin Films ◽  
Si Substrates ◽  
Pzt Thin Film

AbstractPZT thin films were prepared by pulsed laser deposition on unheated Ptcoated Si substrates. As deposited, the films were amorphous. Films crystallized at 550 - 600 °C to produce predominantly crystalline ferroelectric PZT. Crystallization of the amorphous material was accompanied by a linear shrinkage of ∼2 %, as manifested in development of cracks in the film. Spacing, width and morphology of larger cracks followed a regular progression with decreasing film thickness. For film thicknesses less than 500 runm, much of the shrinkage was taken up by small, closely-spaced cracks of local extent. Implications for measurement of PZT thin film ferroelectric properties and processing are discussed.

Growth behavior and ferroelectric properties of Zr-rich PZT thin films deposited on various Pt electrodes

1999 ◽  
Vol 23 (1-4) ◽  
pp. 65-75 ◽  
Author(s):  
Suk-Kyoung Hong ◽  
Yong Eui Lee ◽  
J. Lee ◽  
Hyeong Joon Kim
Keyword(s):  
Thin Films ◽  
Ferroelectric Properties ◽  
Growth Behavior ◽  
Pzt Thin Films ◽  
Pt Electrodes

Irradiation behavior and recovery effect of ferroelectric properties of PZT thin films

2021 ◽  
Author(s):  
Yu Zhao ◽  
Wen-Yue Zhao ◽  
Dan-Dan Ju ◽  
Yue-Yue Yao ◽  
Hao Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Ferroelectric Properties ◽  
Recovery Effect ◽  
Pzt Thin Films ◽  
Irradiation Behavior
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