Post-Processing of Pulsed Laser-Deposited Pzt Thin Films

AbstractPZT thin films were prepared by pulsed laser deposition on unheated Ptcoated Si substrates. As deposited, the films were amorphous. Films crystallized at 550 - 600 °C to produce predominantly crystalline ferroelectric PZT. Crystallization of the amorphous material was accompanied by a linear shrinkage of ∼2 %, as manifested in development of cracks in the film. Spacing, width and morphology of larger cracks followed a regular progression with decreasing film thickness. For film thicknesses less than 500 runm, much of the shrinkage was taken up by small, closely-spaced cracks of local extent. Implications for measurement of PZT thin film ferroelectric properties and processing are discussed.

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Ferroelectric Properties and Microstructures of Bi4-xDyxTi3O12 Thin Films

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.633.378 ◽

2014 ◽

Vol 633 ◽

pp. 378-381

Author(s):

Bei Li ◽

X.B. Liu ◽

M. Chen ◽

X.A. Mei

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Layered Structure ◽

Remanent Polarization ◽

Single Phase ◽

Ferroelectric Properties ◽

Pulsed Laser ◽

Laser Deposition ◽

Deposition Technique ◽

Si Substrates

Dy-doped Bi4Ti3O12 thin films were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition technique, and the structures and electrical properties of the films were investigated. XRD results indicated that all of Bi4-xDyxTi3O12 films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. The remanent polarization ( Pr ) and coercive field (Ec) of the Bi4-xDyxTi3O12 Film with x=0.75 were 25μC/cm2 and 85KV/cm , respectively.

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Electrical Characterization and Microstructures of Bi4-x Scx Ti3O12 Thin Films Grown by Pulsed Laser Deposition Technique

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.833.37 ◽

2013 ◽

Vol 833 ◽

pp. 37-40

Author(s):

Fang Tian ◽

X.A. Mei ◽

M. Chen ◽

C.Q. Huang

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Ferroelectric Properties ◽

Pulsed Laser ◽

Electrical Characterization ◽

Laser Deposition ◽

Layered Perovskite ◽

Deposition Technique ◽

Random Orientation ◽

Si Substrates

Sc-doped bismuth titanate (Bi4-xScxTi3O12: BST) and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. The experimental results indicated that Sc doping into BIT result in a remarkable improvement in ferroelectric properties. The Pr and the Ec values of the BST film with x=0.75 were 25 μC/cm2 and 65 kV/cm, respectively.

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Optical Waveguiding (Pb, La)(Zr,Ti)O3 Thin Films Prepared by Pulsed Laser Deposition

MRS Proceedings ◽

10.1557/proc-444-149 ◽

1996 ◽

Vol 444 ◽

Author(s):

S. B. Xiong ◽

Z. G. Liu ◽

X. Y. Chen ◽

X. L. Guo ◽

T. Yu ◽

...

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Single Phase ◽

Ferroelectric Properties ◽

Pulsed Laser ◽

Laser Deposition ◽

Si Substrates ◽

Glass Substrates ◽

Average Transmittance ◽

Optical Waveguiding

AbstractThe ferroelectric (Pb, La) (Zr,Ti)03 (PLZT(9.4/65/35)) optical waveguiding thin films have been prepared on SiO2 coated Si and on silica glass substrates by pulsed laser deposition. X-ray θ–2θ scans revealed that the films are single-phase pseudo-cubic perovskite. The surface chemical composition of the as grown films were determined by XPS. The ferroelectric properties of the films as grown on Pt/Ti coated silicon were demonstrated by using a modified Sawyer-Tower circuit, and the optical waveguiding properties of the films were characterized by using a rutile prism coupling method. The as grown films have an average transmittance of 80% in the wavelength range of 400˜2000nm and a refractive index of 2.2 at 632.8mn close to the bulk PLZT. The distinct m-lines of the guided TM and TE modes of the films as grown on SiO2 coated Si substrates have been observed.

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Structures and Properties of BiFeO3 Thin Films on Pt(111)/Ti/SiO2/Si Substrates Prepared by Pulsed-Laser Deposition under Various Oxygen Partial Pressures

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.760-762.714 ◽

2013 ◽

Vol 760-762 ◽

pp. 714-718 ◽

Cited By ~ 2

Author(s):

Mei Lin Yi ◽

Chuan Bin Wang ◽

Qiang Shen ◽

Lian Meng Zhang

Keyword(s):

Thin Films ◽

Surface Morphology ◽

Pulsed Laser Deposition ◽

Ferroelectric Properties ◽

Pulsed Laser ◽

Laser Deposition ◽

Si Substrates ◽

Partial Pressures ◽

Structures And Properties ◽

High Degree

Ferroelectric BiFeO3(BFO) thin films were prepared on Pt (111)/Ti/SiO2/Si substrates by pulsed-laser deposition under various oxygen partial pressures (PO2). The effects ofPO2on the phase, orientation, surface morphology, and ferroelectric properties of the films were investigated, particularly in regard to relationships between structure and properties. It was found that the crystallographic orientation and surface morphology of the BFO thin films strongly depended onPO2. Films prepared atPO2=10 Pa had a high degree of (111) orientation and densely packed grains. A maximum of twice the remanent polarization for the BFO thin film was 68 μC/cm2.

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Epitaxial growth and ferroelectric properties of SrBi2Nb2O9(115) thin films grown by pulsed-laser deposition on epitaxial Pt(111) electrode

Applied Physics Letters ◽

10.1063/1.1634387 ◽

2003 ◽

Vol 83 (26) ◽

pp. 5500-5502 ◽

Cited By ~ 10

Author(s):

J.-R. Duclère ◽

M. Guilloux-Viry ◽

V. Bouquet ◽

A. Perrin ◽

E. Cattan ◽

...

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Epitaxial Growth ◽

Ferroelectric Properties ◽

Pulsed Laser ◽

Laser Deposition

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A Study on the Piezoelectric Properties of PZT and Doped PZT Thin Films by Sol-Gel Method

Materials Science Forum ◽

10.4028/www.scientific.net/msf.663-665.650 ◽

2010 ◽

Vol 663-665 ◽

pp. 650-653

Author(s):

Jin Moo Byun ◽

Jeong Sun Han ◽

Jae Hyoung Park ◽

Seong Eui Lee ◽

Hee Chul Lee

Keyword(s):

Thin Films ◽

Piezoelectric Coefficient ◽

Energy Harvester ◽

Sol Gel ◽

Pure Perovskite Structure ◽

Pzt Thin Films ◽

Gel Method ◽

Sol Gel Method ◽

Si Substrates ◽

Pzt Thin Film

This study examined the effect of crystalline orientation and dopants such as Nb and Zn on the piezoelectric coefficient of sol-gel driven Pb1(Zr0.52Ti0.48)O3(PZT) and doped PZT thin films. Crack-free 1-μm-thick PZT and doped PZT thin films prepared by using 2-Methoxyethanol-based sol-gel method were fabricated on Pt/Ti/SiO2/Si substrates. The highly (111) oriented PZT thin films of pure perovskite structure could be obtained by controlling various parameters such as a PbTiO3 seed layer and a concentration of sol-gel solution. The Nb-Zn doped PZT thin films exhibited high piezoelectric coefficient which was about 50 % higher than that of undoped PZT thin film. The highest measured piezoelectric coefficient was 240 pC/N, which could be applicable to piezoelectrically operated MEMS actuator, sensor, or energy harvester devices.

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