scholarly journals Impact of the crystal size of beta zeolite on the structural quality of zeolite templated carbons

2021 ◽  
pp. 111644
Author(s):  
Thibaud Aumond ◽  
Martín Esteves ◽  
Yannick Pouilloux ◽  
Ricardo Faccio ◽  
Alexander Sachse
Keyword(s):  
Crystal Size ◽  
Beta Zeolite ◽  
Structural Quality

ВЛИЯНИЕ ТВЕРДОФАЗНОЙ РЕКРИСТАЛЛИЗАЦИИ С ДВОЙНОЙ ИМПЛАНТАЦИЕЙ НА ПЛОТНОСТЬ СТРУКТУРНЫХ ДЕФЕКТОВ В УЛЬТРАТОНКИХ СЛОЯХ КРЕМНИЯ НА САПФИРЕ

2020 ◽  
Vol 96 (3s) ◽  
pp. 154-159
Author(s):  
Н.Н. Егоров ◽  
С.А. Голубков ◽  
С.Д. Федотов ◽  
В.Н. Стаценко ◽  
А.А. Романов ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Solid Phase ◽  
Modern Method ◽  
Structural Defects ◽  
Structural Quality ◽  
Mos Transistors ◽  
Ultrathin Layers ◽  
Heteroepitaxial Layers ◽  
Xrd And Tem

Высокая плотность структурных дефектов является основной проблемой при изготовлении электроники на гетероструктурах «кремний на сапфире» (КНС). Современный метод получения ультратонких структур КНС с помощью твердофазной эпитаксиальной рекристаллизации позволяет значительно снизить дефектность в гетероэпитаксиальном слое КНС. В данной работе ультратонкие (100 нм) слои КНС были получены путем рекристаллизации и утонения субмикронных (300 нм) слоев кремния на сапфире, обладающих различным структурным качеством. Плотность структурных дефектов в слоях КНС оценивалась с помощью рентгеноструктурного анализа и просвечивающей электронной микроскопии. Кривые качания от дифракционного отражения Si(400), полученные в ω-геометрии, продемонстрировали максимальную ширину на полувысоте пика не более 0,19-0,20° для ультратонких слоев КНС толщиной 100 нм. Формирование структурно совершенного субмикронного слоя КНС 300 нм на этапе газофазной эпитаксии обеспечивает существенное уменьшение плотности дислокаций в ультратонком кремнии на сапфире до значений ~1 • 104 см-1. Тестовые n-канальные МОП-транзисторы на ультратонких структурах КНС характеризовались подвижностью носителей в канале 725 см2 Вс-1. The high density of structural defects is the main problem on the way to the production of electronics on silicon-on-sapphire (SOS) heteroepitaxial wafers. The modern method of obtaining ultrathin SOS wafers is solid-phase epitaxial recrystallization which can significantly reduce the density of defects in the SOS heteroepitaxial layers. In the current work, ultrathin (100 nm) SOS layers were obtained by recrystallization and thinning of submicron (300 nm) SOS layers, which have various structural quality. The density of structural defects in the layers was estimated by using XRD and TEM. Full width at half maximum of rocking curves (ω-geometry) was no more than 0.19-0.20° for 100 nm ultra-thin SOS layers. The structural quality of 300 nm submicron SOS layers, which were obtained by CVD, depends on dislocation density in 100 nm ultrathin layers. The dislocation density in ultrathin SOS layers was reduced by ~1 • 104 cm-1 due to the utilization of the submicron SOS with good crystal quality. Test n-channel MOS transistors based on ultra-thin SOS wafers were characterized by electron mobility in the channel 725 cm2 V-1 s-1.

The Physical Context of Child Development

2021 ◽  
Vol 30 (1) ◽  
pp. 41-48
Author(s):  
Gary W. Evans
Keyword(s):  
Child Development ◽  
Observational Studies ◽  
Physiological Stress ◽  
Personal Characteristics ◽  
Adverse Outcomes ◽  
Structural Quality ◽  
Physical Context ◽  
Physical Setting ◽  
Physical Features

Child development reflects interactions between personal characteristics and the physical and social environment. Psychology, however, lacks analysis of physical features that influence child development. In this article, I describe a preliminary taxonomy of physical-setting characteristics that can influence child development, focusing on environmental stressors such as noise, crowding, and chaos along with structural quality of housing, day care, and schools. Adverse outcomes associated with suboptimal physical settings during childhood include cognitive and socioemotional difficulties along with chronic physiological stress. Both direct effects on the child as well as indirect effects occurring via significant persons surrounding the child are described. Methodological limitations, particularly reliance on observational studies, are a weakness in the current literature, but increasingly more rigorously obtained findings yield converging evidence of the effects of physical settings on child development.

scholarly journals Kabuli and Apulian black Chickpea Milling By-Products as Innovative Ingredients to Provide High Levels of Dietary Fibre and Bioactive Compounds in Gluten-Free Fresh Pasta

Molecules ◽  
2021 ◽  
Vol 26 (15) ◽  
pp. 4442
Author(s):  
Michela Costantini ◽  
Carmine Summo ◽  
Michele Faccia ◽  
Francesco Caponio ◽  
Antonella Pasqualone
Keyword(s):  
Bioactive Compounds ◽  
Dietary Fibre ◽  
Absorption Capacity ◽  
Nutritional Deficiencies ◽  
Structural Quality ◽  
Gluten Free ◽  
Food Industries ◽  
Chickpea Flour ◽  
Fresh Pasta

Gluten-free (GF) products, including pasta, are often characterised by nutritional deficiencies, such as scarce dietary fibre and excess of calories. Chickpea flour is increasingly being used by the food industries. Hulls, rich in dietary fibre and bioactive compounds, are discarded after milling. The aim of this work was to evaluate the quality features of short-cut GF fresh pasta added of hull (8% w/w) derived from kabuli (KH) or Apulian black (ABH) chickpeas, in comparison with control GF pasta prepared without hull. The enriched pasta, which could be labelled as “high fibre”, was characterised by a higher level of bioactive compounds and antioxidant activity than the control. ABH-enriched pasta showed the highest anthocyanins (33.37 ± 1.20 and 20.59 ± 0.11 mg/kg of cyanidin-3-O-glucoside on dry matter in raw and cooked pasta, respectively). Hull addition increased colour intensity and structural quality of GF pasta: ABH-enriched pasta had the lowest cooking loss and the highest water absorption capacity; KH-enriched pasta showed the highest firmness. No significant differences in sensory liking were found among the samples, except for “aftertaste”. Chickpea hull can be used as an innovative ingredient to produce potentially functional GF pasta, meeting the dietary needs of consumers without affecting quality.

On the Structural Quality of Co/Cu Trilayers and Superlattices: The Influence of the Template Layer

1993 ◽  
pp. 439-451
Author(s):  
A. Cebollada ◽  
J. de la Figuera ◽  
A. L. Vázquez de Parga ◽  
C. Ocal ◽  
R. Miranda
Keyword(s):  
Structural Quality

scholarly journals Исследование этапов превращения кремния в карбид кремния в процессе атомного замещения методами полного внешнего отражения рентгеновских лучей и рентгеновской дифрактомерии

2022 ◽  
Vol 64 (3) ◽  
pp. 326
Author(s):  
С.А. Кукушкин ◽  
А.В. Осипов ◽  
Е.В. Осипова ◽  
В.М. Стожаров
Keyword(s):  
Structural Quality ◽  
Total External Reflection ◽  
X Rays ◽  
Reflection Method ◽  
X Ray Diffraction ◽  
Modified Technique ◽  
Substitution Method ◽  
X Ray ◽  
Sic Films

X-ray diffraction and total external reflection of X-rays (X-ray reflectometry) methods were used to study the successive stages of synthesis of epitaxial SiC films on Si (100) X-ray diffraction and total external X-ray reflection (XRD) methods were used to study successive stages of synthesis of epitaxial SiC films on Si (100) surfaces, (110) and (111) surfaces by the atom substitution method. The data on the transformation evolution of (100) surfaces were studied, (110) and (111) Si, into SiC surfaces. A comparative analysis of the X-ray structural quality of the SiC layers grown on Si by the atom substitution method with the quality of SiC layers grown by Advanced Epi by the standard CVD method. A modified technique for the total outer X-ray reflection method, based on measurements of the intensity of the reflected X-rays using a special parabolic mirror. It is shown that the method of total external reflection method makes it possible to obtain important information about the degree of surface roughness of SiC layers, the evolution of their crystal structure and plasmon energy in the process of Si to SiC conversion.

Quality of Educational Programs for Elementary School-Age Students With Autism

2022 ◽  
Vol 127 (1) ◽  
pp. 29-41
Author(s):  
Samuel L. Odom ◽  
Ann M. Sam ◽  
Brianne Tomaszewski ◽  
Ann W. Cox
Keyword(s):  
Children With Autism ◽  
The United States ◽  
Educational Programs ◽  
Structural Quality ◽  
Rating Systems ◽  
Elementary School Age ◽  
School Aged Children ◽  
Quality Ratings ◽  
Total Program

Abstract The purpose of this study was to assess the quality of educational programs for school-aged children with autism in the United States. Investigators completed the Autism Program Environment Quality Rating Systems-Preschool/Elementary (APERS-PE) in 60 elementary schools enrolling children with autism. The mean total rating scores were near the midpoint rating, indicating schools were providing educational program environments classified as adequate but not of high quality. Domains of the APERS-PE reflecting structural quality tended to be significantly above average and domains reflecting process quality tended to be significantly below average. With a few exceptions, inclusive and special education program did not differ significantly in total program quality ratings and reflected the same pattern of domain quality ratings.

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