A 3000 hours DC Life Test on AlGaN/GaN HEMT for RF and microwave applications

2005 ◽  
Vol 45 (9-11) ◽  
pp. 1617-1621 ◽  
Author(s):  
A. Sozza ◽  
C. Dua ◽  
E. Morvan ◽  
B. Grimber ◽  
S.L. Delage
Keyword(s):  
Life Test ◽  
Gan Hemt ◽  
Microwave Applications

scholarly journals S-band pulsed-RF operating life test on AlGaN/GaN HEMT devices for radar application

2019 ◽  
Vol 100-101 ◽  
pp. 113434 ◽  
Author(s):  
N. Moultif ◽  
O. Latry ◽  
M. Ndiaye ◽  
T. Neveu ◽  
E. Joubert ◽  
...  
Keyword(s):  
Life Test ◽  
Operating Life ◽  
Gan Hemt ◽  
Pulsed Rf

Physical analysis of Schottky contact on power AlGaN/GaN HEMT after pulsed-RF life test

2012 ◽  
Vol 52 (9-10) ◽  
pp. 2205-2209 ◽  
Author(s):  
J.-B. Fonder ◽  
L. Chevalier ◽  
C. Genevois ◽  
O. Latry ◽  
C. Duperrier ◽  
...  
Keyword(s):  
Schottky Contact ◽  
Physical Analysis ◽  
Life Test ◽  
Gan Hemt ◽  
Pulsed Rf

scholarly journals InAlN/GaN and AlGaN/GaN HEMT technologies comparison for microwave applications

2021 ◽  
Vol 1019 ◽  
pp. 012071
Author(s):  
L E Velikovskiy ◽  
P E Sim ◽  
O I Demchenko ◽  
N E Kurbanova ◽  
I A Filippov ◽  
...  
Keyword(s):  
Gan Hemt ◽  
Microwave Applications

scholarly journals Performance analysis of HfO2/InAlN/AlN/GaN HEMT with AlN buffer layer for high power microwave applications

2020 ◽  
Vol 5 (2) ◽  
pp. 192-198 ◽  
Author(s):  
P. Murugapandiyan ◽  
A. Mohanbabu ◽  
V. Rajya Lakshmi ◽  
V.N. Ramakrishnan ◽  
Arathy Varghese ◽  
...  
Keyword(s):  
Performance Analysis ◽  
Buffer Layer ◽  
High Power ◽  
High Power Microwave ◽  
Gan Hemt ◽  
Microwave Applications ◽  
Aln Buffer ◽  
Power Microwave

Reliability analysis of AlGaN/GaN HEMT on SopSiC composite substrate under long-term DC-life test

2009 ◽  
Vol 49 (9-11) ◽  
pp. 1207-1210 ◽  
Author(s):  
N. Ronchi ◽  
F. Zanon ◽  
A. Stocco ◽  
A. Tazzoli ◽  
E. Zanoni ◽  
...  
Keyword(s):  
Reliability Analysis ◽  
Life Test ◽  
Gan Hemt ◽  
Composite Substrate

High Power Microstrip GaN-HEMT Switches for Microwave Applications

2008 ◽  
Author(s):  
V. Alleva ◽  
A. Megna ◽  
M. Peroni ◽  
P. Romanini ◽  
A. Bettidi ◽  
...  
Keyword(s):  
High Power ◽  
Gan Hemt ◽  
Microwave Applications

High power GaN-HEMT SPDT switches for microwave applications

2009 ◽  
Vol 19 (5) ◽  
pp. 598-606 ◽  
Author(s):  
Andrea Bettidi ◽  
Antonio Cetronio ◽  
Walter Ciccognani ◽  
Marco De Dominicis ◽  
Claudio Lanzieri ◽  
...  
Keyword(s):  
High Power ◽  
Gan Hemt ◽  
Microwave Applications

Design and analysis of 30 nm T-gate InAlN/GaN HEMT with AlGaN back-barrier for high power microwave applications

2017 ◽  
Vol 111 ◽  
pp. 1050-1057 ◽  
Author(s):  
P. Murugapandiyan ◽  
S. Ravimaran ◽  
J. William ◽  
K. Meenakshi Sundaram
Keyword(s):  
High Power ◽  
High Power Microwave ◽  
Gan Hemt ◽  
Microwave Applications ◽  
Power Microwave

An atomic-resolution microscope study of Al contracts on GaAs

1986 ◽  
Vol 44 ◽  
pp. 726-727
Author(s):  
Z. Liliental-Weber ◽  
C. Nelson ◽  
R. Ludeke ◽  
R. Gronsky ◽  
J. Washburn
Keyword(s):  
High Speed ◽  
Schottky Contacts ◽  
Detailed Knowledge ◽  
The Past ◽  
Semiconductor Interfaces ◽  
Deposited Metal ◽  
Microwave Applications ◽  
Free Interfaces ◽  
Potential Use

The properties of metal/semiconductor interfaces have received considerable attention over the past few years, and the Al/GaAs system is of special interest because of its potential use in high-speed logic integrated optics, and microwave applications. For such materials a detailed knowledge of the geometric and electronic structure of the interface is fundamental to an understanding of the electrical properties of the contact. It is well known that the properties of Schottky contacts are established within a few atomic layers of the deposited metal. Therefore surface contamination can play a significant role. A method for fabricating contamination-free interfaces is absolutely necessary for reproducible properties, and molecularbeam epitaxy (MBE) offers such advantages for in-situ metal deposition under UHV conditions

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