Low power resistive switching memory using Cu metallic filament in Ge0.2Se0.8 solid-electrolyte

Microelectronics Reliability ◽

10.1016/j.microrel.2010.01.022 ◽

2010 ◽

Vol 50 (5) ◽

pp. 643-646 ◽

Author(s):

S.Z. Rahaman ◽

S. Maikap

Keyword(s):

Low Power ◽

Solid Electrolyte ◽

Resistive Switching ◽

Resistive Switching Memory ◽

Metallic Filament ◽

Switching Memory

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Low current bipolar resistive switching memory using Cu metallic filament in Ge0.2Se0.8 solid-electrolyte

Proceedings of 2010 International Symposium on VLSI Technology, System and Application ◽

10.1109/vtsa.2010.5488915 ◽

2010 ◽

Author(s):

S. Z. Rahaman ◽

S. Maikap ◽

C.-H. Lin ◽

P.-J. Tzeng ◽

H. Y. Lee ◽

...

Keyword(s):

Solid Electrolyte ◽

Resistive Switching ◽

Bipolar Resistive Switching ◽

Resistive Switching Memory ◽

Metallic Filament ◽

Switching Memory

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Bipolar Resistive Switching Memory Using Cu Metallic Filament in Ge[sub 0.4]Se[sub 0.6] Solid Electrolyte

Electrochemical and Solid-State Letters ◽

10.1149/1.3339449 ◽

2010 ◽

Vol 13 (5) ◽

pp. H159 ◽

Author(s):

S. Z. Rahaman ◽

S. Maikap ◽

H.-C. Chiu ◽

C.-H. Lin ◽

T.-Y. Wu ◽

...

Keyword(s):

Solid Electrolyte ◽

Resistive Switching ◽

Bipolar Resistive Switching ◽

Resistive Switching Memory ◽

Metallic Filament ◽

Switching Memory

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Formation free low power resistive switching memory using IrOx/AlOx/W cross-point with excellent uniformity and multi level operation

10.7567/ssdm.2011.f-8-4 ◽

2011 ◽

Author(s):

W. Banerjee ◽

S. Z. Rahaman ◽

S. Maikap

Keyword(s):

Low Power ◽

Resistive Switching ◽

Cross Point ◽

Resistive Switching Memory ◽

Multi Level ◽

Switching Memory

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A low power selector-less crossbar array with complementary resistive-switching memory

2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) ◽

10.1109/edssc.2016.7785279 ◽

2016 ◽

Author(s):

Jang-Woo Ryu ◽

Kee-Won Kwon

Keyword(s):

Low Power ◽

Resistive Switching ◽

Resistive Switching Memory ◽

Crossbar Array ◽

Switching Memory

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Selectorless Oxide-Based Resistive Switching Memory with Nonuniform Dielectric for Low Power Crossbar Array Applications

ECS Transactions ◽

10.1149/08903.0045ecst ◽

2019 ◽

Vol 89 (3) ◽

pp. 45-51 ◽

Author(s):

Ying-Chen Chen ◽

Chao-Cheng Lin ◽

Sungjun Kim ◽

Jack C. Lee

Keyword(s):

Low Power ◽

Resistive Switching ◽

Resistive Switching Memory ◽

Crossbar Array ◽

Switching Memory

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Investigation on Amorphous Ga2O3 Based Conductive-Bridge Resistive Switching Memory with Low-Power, High-Speed, High Reliability

ECS Meeting Abstracts ◽

10.1149/ma2018-02/18/744 ◽

2018 ◽

Keyword(s):

Low Power ◽

Resistive Switching ◽

High Reliability ◽

Resistive Switching Memory ◽

Conductive Bridge ◽

Switching Memory

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Ru Conducting Filament Based Cross-Point Resistive Switching Memory for Future Low Power Operation

2020 IEEE Silicon Nanoelectronics Workshop (SNW) ◽

10.1109/snw50361.2020.9131659 ◽

2020 ◽

Author(s):

Siddheswar Maikap ◽

Asim Senapati

Keyword(s):

Low Power ◽

Resistive Switching ◽

Cross Point ◽

Conducting Filament ◽

Resistive Switching Memory ◽

Power Operation ◽

Switching Memory

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Investigation on amorphous InGaZnO based resistive switching memory with low-power, high-speed, high reliability

Thin Solid Films ◽

10.1016/j.tsf.2013.09.033 ◽

2013 ◽

Vol 549 ◽

pp. 54-58 ◽

Author(s):

Yang-Shun Fan ◽

Po-Tsun Liu ◽

Ching-Hui Hsu

Keyword(s):

Low Power ◽

Resistive Switching ◽

High Reliability ◽

Resistive Switching Memory ◽

Amorphous Ingazno ◽

Switching Memory

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Rough surface improved formation-free low power resistive switching memory using IrOx/GdOx/W structure

2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) ◽

10.1109/vlsi-tsa.2013.6545585 ◽

2013 ◽

Author(s):

D. Jana ◽

S. Maikap ◽

A. Prakash ◽

H. Y. Lee ◽

W. S. Chen ◽

...

Keyword(s):

Low Power ◽

Rough Surface ◽

Resistive Switching ◽

Resistive Switching Memory ◽

Switching Memory

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Enhanced nanoscale resistive switching memory characteristics and switching mechanism using high-Ge-content Ge0.5Se0.5 solid electrolyte

Nanoscale Research Letters ◽

10.1186/1556-276x-7-614 ◽

2012 ◽

Vol 7 (1) ◽

pp. 614 ◽

Author(s):

Sheikh Rahaman ◽

Siddheswar Maikap ◽

Atanu Das ◽

Amit Prakash ◽

Ya Wu ◽

...

Keyword(s):

Solid Electrolyte ◽

Resistive Switching ◽

Resistive Switching Memory ◽

Switching Mechanism ◽

Memory Characteristics ◽

Switching Memory

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