Formation free low power resistive switching memory using IrOx/AlOx/W cross-point with excellent uniformity and multi level operation

2011 ◽  
Author(s):  
W. Banerjee ◽  
S. Z. Rahaman ◽  
S. Maikap
Keyword(s):  
Low Power ◽  
Resistive Switching ◽  
Cross Point ◽  
Resistive Switching Memory ◽  
Multi Level ◽  
Switching Memory

Unveiling the influence of surrounding materials and realization of multi-level storage in resistive switching memory

Nanoscale ◽  
2020 ◽  
Vol 12 (43) ◽  
pp. 22070-22074 ◽  
Author(s):  
Kuan-Chang Chang ◽  
Tianjiao Dai ◽  
Lei Li ◽  
Xinnan Lin ◽  
Shengdong Zhang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Neuromorphic Computing ◽  
Resistive Switching Memory ◽  
Multilevel Storage ◽  
Multi Level ◽  
Switching Memory

This work investigated the influence of surrounding material on RRAM and offered a strategy to achieve multilevel storage functionality with superior scalability and stability, suggesting its potential to be applied in neuromorphic computing area.

Novel cross-point resistive switching memory with self-formed schottky barrier

2010 ◽  
Author(s):  
Minseok Jo ◽  
Dong-jun Seong ◽  
Seonghyun Kim ◽  
Joonmyoung Lee ◽  
Wootae Lee ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Resistive Switching ◽  
Cross Point ◽  
Resistive Switching Memory ◽  
Switching Memory
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