Low current bipolar resistive switching memory using Cu metallic filament in Ge0.2Se0.8 solid-electrolyte
2010 ◽
Vol 13
(5)
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pp. H159
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2010 ◽
Vol 50
(5)
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pp. 643-646
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Keyword(s):
2014 ◽
Vol 14
(12)
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pp. 9498-9503
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2013 ◽
Vol 13
(1)
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pp. 252-257
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2016 ◽
Vol 69
(11)
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pp. 1613-1618
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