Bipolar Resistive Switching Memory Using Cu Metallic Filament in Ge[sub 0.4]Se[sub 0.6] Solid Electrolyte

2010 ◽  
Vol 13 (5) ◽  
pp. H159 ◽  
Author(s):  
S. Z. Rahaman ◽  
S. Maikap ◽  
H.-C. Chiu ◽  
C.-H. Lin ◽  
T.-Y. Wu ◽  
...  
Keyword(s):  
Solid Electrolyte ◽  
Resistive Switching ◽  
Bipolar Resistive Switching ◽  
Resistive Switching Memory ◽  
Metallic Filament ◽  
Switching Memory

Self-rectifying bipolar resistive switching memory based on an iron oxide and graphene oxide hybrid

Nanoscale ◽  
2017 ◽  
Vol 9 (40) ◽  
pp. 15314-15322 ◽  
Author(s):  
Se-I Oh ◽  
Janardhanan R. Rani ◽  
Sung-Min Hong ◽  
Jae-Hyung Jang
Keyword(s):  
Graphene Oxide ◽  
Iron Oxide ◽  
Resistive Switching ◽  
Bipolar Resistive Switching ◽  
Solution Processed ◽  
Resistive Switching Memory ◽  
Switching Memory

A solution-processed FeOx–GO hybrid based RRAM device with excellent self-rectifying characteristics (ILRS/IR > 104) is presented.

Investigating bipolar resistive switching characteristics in filament type and interface type BON-based resistive switching memory

2013 ◽  
Vol 529 ◽  
pp. 389-393
Author(s):  
Hsueh-Chih Tseng ◽  
Ting-Chang Chang ◽  
Kai-Hung Cheng ◽  
Jheng-Jie Huang ◽  
Yu-Ting Chen ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Bipolar Resistive Switching ◽  
Resistive Switching Memory ◽  
Switching Characteristics ◽  
Interface Type ◽  
Switching Memory ◽  
Filament Type
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