A study of the interface-trap activation kinetics in the Negative Bias Temperature Instability

Microelectronics Reliability ◽

10.1016/j.microrel.2013.07.045 ◽

2014 ◽

Vol 54 (1) ◽

pp. 22-29 ◽

Author(s):

Filippo Alagi

Keyword(s):

Interface Trap ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Activation Kinetics ◽

Temperature Instability ◽

Bias Temperature Instability ◽

Trap Activation

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Recent Issues in Negative-Bias Temperature Instability: Initial Degradation, Field Dependence of Interface Trap Generation, Hole Trapping Effects, and Relaxation

IEEE Transactions on Electron Devices ◽

10.1109/ted.2007.902883 ◽

2007 ◽

Vol 54 (9) ◽

pp. 2143-2154 ◽

Author(s):

A.E. Islam ◽

H. Kufluoglu ◽

D. Varghese ◽

S. Mahapatra ◽

M.A. Alam

Keyword(s):

Field Dependence ◽

Interface Trap ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability ◽

Hole Trapping ◽

Trapping Effects

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An Analysis of the Field Dependence of Interface Trap Generation under Negative Bias Temperature Instability Stress using Wentzel–Kramers–Brillouin with Density Gradient Method

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.014302 ◽

2011 ◽

Vol 50 (1R) ◽

pp. 014302 ◽

Author(s):

SeongWook Choi ◽

Chang-Ki Baek ◽

Sooyoung Park ◽

Young June Park

Keyword(s):

Density Gradient ◽

Field Dependence ◽

Gradient Method ◽

Interface Trap ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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An Analysis of the Field Dependence of Interface Trap Generation under Negative Bias Temperature Instability Stress using Wentzel–Kramers–Brillouin with Density Gradient Method

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.014302 ◽

2011 ◽

Vol 50 ◽

pp. 014302

Author(s):

SeongWook Choi ◽

Chang-Ki Baek ◽

Sooyoung Park ◽

Young June Park

Keyword(s):

Density Gradient ◽

Field Dependence ◽

Gradient Method ◽

Interface Trap ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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Negative bias temperature instability of SiC MOSFET induced by interface trap assisted hole trapping

Applied Physics Letters ◽

10.1063/1.4939553 ◽

2016 ◽

Vol 108 (1) ◽

pp. 012106 ◽

Author(s):

Cheng-Tyng Yen ◽

Chien-Chung Hung ◽

Hsiang-Ting Hung ◽

Chwan-Ying Lee ◽

Lurng-Shehng Lee ◽

...

Keyword(s):

Interface Trap ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability ◽

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Oxide field dependence of interface trap generation during negative bias temperature instability in PMOS

IEEE International Integrated Reliability Workshop Final Report, 2004 ◽

10.1109/irws.2004.1422750 ◽

2005 ◽

Author(s):

M. Denais ◽

V. Huard ◽

C. Parthasarathy ◽

G. Ribes ◽

F. Perrier ◽

...

Keyword(s):

Field Dependence ◽

Interface Trap ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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New Multi-stages – Hydrogen Diffusion Model for Negative Bias Temperature Instability

Journal of Nano- and Electronic Physics ◽

10.21272/jnep.11(4).04018 ◽

2019 ◽

Vol 11 (4) ◽

pp. 04018-1-04018-6

Author(s):

M. Mallati ◽

◽

H. Bentarzi ◽

Keyword(s):

Diffusion Model ◽

Hydrogen Diffusion ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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Defect Creation Stimulated by Thermally Activated Hole Trapping as the Driving Force Behind Negative Bias Temperature Instability in SiO2, SiON, and High-k Gate Stacks

2008 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/irws.2008.4796094 ◽

2008 ◽

Author(s):

Tibor Grasser ◽

Ben Kaczer ◽

Thomas Aichinger ◽

Wolfgang Goes ◽

Michael Nelhiebel

Keyword(s):

Driving Force ◽

Negative Bias ◽

Gate Stacks ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Thermally Activated ◽

Bias Temperature Instability ◽

Hole Trapping ◽

High K ◽

Defect Creation

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A novel Negative Bias Temperature Instability model for nanoscale Finfet

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits ◽

10.1109/ipfa.2009.5232688 ◽

2009 ◽

Author(s):

Chenyue Ma ◽

Bo Li ◽

Frank He ◽

Xing Zhang ◽

Xinnan Lin

Keyword(s):

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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Spin dependent recombination study of the atomic-scale effects of fluorine on the negative bias temperature instability

2009 IEEE International Reliability Physics Symposium ◽

10.1109/irps.2009.5173396 ◽

2009 ◽

Author(s):

J.T. Ryan ◽

P.M. Lenahan ◽

A.T. Krishnan ◽

S. Krishnan ◽

J.P. Campbell

Keyword(s):

Scale Effects ◽

Atomic Scale ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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Mechanism and process dependence of negative bias temperature instability (NBTI) for pMOSFETs with ultrathin gate dielectrics

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) ◽

10.1109/iedm.2001.979649 ◽

2002 ◽

Author(s):

C.H. Liu ◽

M.T. Lee ◽

Chih-Yung Lin ◽

J. Chen ◽

K. Schruefer ◽

...

Keyword(s):

Gate Dielectrics ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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