scholarly journals Total Ionizing Dose, Random Dopant Fluctuations, and its combined effect in the 45nm PDSOI node

2017 ◽  
Vol 68 ◽  
pp. 21-29 ◽  
Author(s):  
Eleni Chatzikyriakou ◽  
William Redman-White ◽  
C.H. De Groot
2008 ◽  
Vol 7 (3) ◽  
pp. 291-298 ◽  
Author(s):  
E. Baravelli ◽  
M. Jurczak ◽  
N. Speciale ◽  
K. De Meyer ◽  
A. Dixit

2020 ◽  
Vol 67 (4) ◽  
pp. 1485-1491 ◽  
Author(s):  
Alessandro S. Spinelli ◽  
Christian Monzio Compagnoni ◽  
Andrea L. Lacaita

Author(s):  
Tomoko Mizutani ◽  
Kiyoshi Takeuchi ◽  
Takuya Saraya ◽  
Hiroshi Oka ◽  
Takahiro MORI ◽  
...  

Abstract Threshold voltage variability of bulk MOSFETs was measured at room temperature and cryogenic temperature and compared. It is found that the temperature dependences of threshold voltage defined by extrapolation (VTHEX) and threshold voltage defined by constant current (VTHC) show different behaviors and the percolation path in the channel, which is caused by potential valley due to random dopant fluctuations, weakens the temperature dependence of VTHC.


2017 ◽  
Vol 29 (2) ◽  
pp. 025203 ◽  
Author(s):  
N D Akhavan ◽  
G A Umana-Membreno ◽  
R Gu ◽  
J Antoszewski ◽  
L Faraone

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