Study of temperature dependence of breakdown voltage and AC TDDB reliability for thick insulator film deposited by plasma process

In this work, avalanche photodiodes (APDs) were fabricated using a-plane 6H- and 4H-SiC materials to investigate their electrical and optical properties. Temperature dependence of avalanche breakdown was measured. The diode structures were fabricated with positive angle beveling and oxide passivation to ensure a uniform breakdown across the device area. Despite the apparent presence of micro-plasmas, we observed that the breakdown voltage of a-plane 6H-SiC APDs increased with temperature suggesting a positive temperature coefficient.

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Temperature dependence of the breakdown voltage for reverse-biased GaN p–n–n+ diodes

Solid State Communications ◽

10.1016/s0038-1098(00)00513-5 ◽

2001 ◽

Vol 117 (9) ◽

pp. 549-553 ◽

Cited By ~ 8

Author(s):

R.L. Aggarwal ◽

I. Melngailis ◽

S. Verghese ◽

R.J. Molnar ◽

M.W. Geis ◽

...

Keyword(s):

Temperature Dependence ◽

Breakdown Voltage

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Temperature Dependence of Impact Ionization Coefficients in 4H-SiC

Materials Science Forum ◽

10.4028/www.scientific.net/msf.778-780.461 ◽

2014 ◽

Vol 778-780 ◽

pp. 461-466 ◽

Cited By ~ 14

Author(s):

Hiroki Niwa ◽

Jun Suda ◽

Tsunenobu Kimoto

Keyword(s):

Temperature Dependence ◽

Temperature Coefficient ◽

Breakdown Voltage ◽

Elevated Temperatures ◽

Phonon Scattering ◽

Impact Ionization ◽

Negative Temperature ◽

Positive Temperature Coefficient ◽

Positive Temperature ◽

Ionization Coefficients

Impact ionization coefficients of 4H-SiC were measured at room temperature and at elevated temperatures up to 200°C. Photomultiplication measurement was done in two complementary photodiodes to measure the multiplication factors of holes (Mp) and electrons (Mn), and ionization coefficients were extracted. Calculated breakdown voltage using the obtained ionization coefficients showed good agreement with the measured values in this study, and also in other reported PiN diodes and MOSFETs. In high-temperature measurement, breakdown voltage exhibited a positive temperature coefficient and multiplication factors showed a negative temperature coefficient. Therefore, extracted ionization coefficient has decreased which can be explained by the increase of phonon scattering. The calculated temperature dependence of breakdown voltage agreed well with the measured values not only for the diodes in this study, but also in PiN diode in other literature.

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