FTIR analysis of the high pressure response of native insulin assemblies

2013 ◽  
Vol 1050 ◽  
pp. 159-165 ◽  
Author(s):  
F. Piccirilli ◽  
S. Mangialardo ◽  
P. Postorino ◽  
S. Lupi ◽  
A. Perucchi
Crystals ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 34
Author(s):  
Akun Liang ◽  
Robin Turnbull ◽  
Enrico Bandiello ◽  
Ibraheem Yousef ◽  
Catalin Popescu ◽  
...  

We report the first high-pressure spectroscopy study on Zn(IO3)2 using synchrotron far-infrared radiation. Spectroscopy was conducted up to pressures of 17 GPa at room temperature. Twenty-five phonons were identified below 600 cm−1 for the initial monoclinic low-pressure polymorph of Zn(IO3)2. The pressure response of the modes with wavenumbers above 150 cm−1 has been characterized, with modes exhibiting non-linear responses and frequency discontinuities that have been proposed to be related to the existence of phase transitions. Analysis of the high-pressure spectra acquired on compression indicates that Zn(IO3)2 undergoes subtle phase transitions around 3 and 8 GPa, followed by a more drastic transition around 13 GPa.


CrystEngComm ◽  
2021 ◽  
Author(s):  
Jonathan Richardson ◽  
Asato Mizuno ◽  
Yoshiaki Shuku ◽  
Kunio Awaga ◽  
Neil Robertson ◽  
...  

Magnetic bistability has previously been observed and evaluated in an organic thiazyl radical 1,3,5 triathia 2,4,6-triazapentalenyl (TTTA). Herein, the structure-pressure response of TTTA has been evaluated by X-ray diffraction, where...


Author(s):  
R. F. Vogel ◽  
M. A. Ehrmann ◽  
M. G. Gänzle ◽  
C. Kato ◽  
M. Korakli ◽  
...  

2011 ◽  
Vol 23 (4) ◽  
pp. 043101 ◽  
Author(s):  
Yan Jin ◽  
Kang Ping Chen ◽  
Mian Chen ◽  
Nicholas Grapsas ◽  
Fu Xiang Zhang

Nanoscale ◽  
2017 ◽  
Vol 9 (30) ◽  
pp. 10741-10749 ◽  
Author(s):  
Guanjun Xiao ◽  
Ye Cao ◽  
Guangyu Qi ◽  
Lingrui Wang ◽  
Qingxin Zeng ◽  
...  

The high-pressure response of few-layer black phosphorus (BP) nanosheets remains elusive, despite the special interest in it particularly after the achievement of an exotic few-layer BP based field effect transistor.


2020 ◽  
Vol 265 ◽  
pp. 106408
Author(s):  
Claudia E. Munte ◽  
Matthias Karl ◽  
Waldemar Kauter ◽  
Lukas Eberlein ◽  
Thuy-Vy Pham ◽  
...  

2020 ◽  
Vol 102 (21) ◽  
Author(s):  
B. J. Jensen ◽  
T. M. Hartsfield ◽  
D. B. Holtkamp ◽  
F. J. Cherne ◽  
R. B. Corrow ◽  
...  

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