scholarly journals Mechanism of large strain accommodation assisted by shear localization in a precipitation-hardened Cu – Be alloy

Author(s):  
Ivan Lomakin ◽  
Alfiia Nigmatullina ◽  
Xavier Sauvage
Author(s):  
Xinjian Duan ◽  
Don Metzger ◽  
Mukesh Jian

The occurrence of shear localization in structural materials is often associated with bifurcation in continuum solid mechanics. Many approaches such as J2 corner theory and the void model have been proposed to simulate this phenomenon by the use of FEM. In this paper, a new approach with a basis in microstructural inhomogeneity has been proposed and successfully applied to simulate large strain deformation in uniaxial tension of aluminium alloys. The method, in addition, takes advantage of a more suitable hardening law for Al alloys — namely the Voce equation. Further, the influence of various yield criteria (i.e. von Mises, Hill’s 1948 and Barlat’s 1991) on the prediction of shear localization is discussed in the present work. The predicted shear band angle is also compared with the measured value.


2008 ◽  
Vol 12 (3) ◽  
pp. 203-228 ◽  
Author(s):  
Said Taïbi ◽  
Jean-Marie Fleureau ◽  
Sigit Hadiwardoyo ◽  
Siba Kheirbek-Saoud

1990 ◽  
Vol 57 (2) ◽  
pp. 298-306 ◽  
Author(s):  
K. W. Neale ◽  
S. C. Shrivastava

The inelastic behavior of solid circular bars twisted to arbitrarily large strains is considered. Various phenomenological constitutive laws currently employed to model finite strain inelastic behavior are shown to lead to closed-form analytical solutions for torsion. These include rate-independent elastic-plastic isotropic hardening J2 flow theory of plasticity, various kinematic hardening models of flow theory, and both hypoelastic and hyperelastic formulations of J2 deformation theory. Certain rate-dependent inelastic laws, including creep and strain-rate sensitivity models, also permit the development of closed-form solutions. The derivation of these solutions is presented as well as numerous applications to a wide variety of time-independent and rate-dependent plastic constitutive laws.


2015 ◽  
Vol 1114 ◽  
pp. 143-148
Author(s):  
Nicolae Serban ◽  
Doina Răducanu ◽  
Vasile Danut Cojocaru ◽  
Nicolae Ghiban

Severe plastic deformation (SPD) has received enormous interest over the last two decades as a method capable of producing fully dense and bulk ultra-fine grained (UFG) and nanocrystalline (NC) materials. Significant grain refinement obtained by SPD leads to improvement of mechanical, microstructural and physical properties. Compared to classical deformation processes, the big advantage of SPD manufacturing techniques, represented in particular by equal channel angular pressing (ECAP) is the lack of shape-change deformation and the consequent possibility to impart extremely large strain. In ECAP processing, the workpiece is pressed through a die in which two channels of equal cross-section intersect at an angle of ϕ and an additional angle of ψ define the arc of curvature at the outer point of intersection of the two channels. As a result of pressing, the sample theoretically deforms by simple shear and retains the same cross-sectional area to allow repeated pressings for several cycles. A commercial AlMgSi alloy was investigated in our study. The specimens were processed at room temperature for multiple passes, using three different ECAP dies. All samples (ECAP processed and as-received) were subjected to metallographic analysis and mechanical testing. Several correlations between the main processing parameters and the resulting microstructural aspect and mechanical features for the processed material were established. It was shown that severe plastic deformation by means of ECAP processing can be used in aluminum alloys microstructural design as an advanced tool for grain refinement in order to attain the desired microstructure and mechanical properties.


2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Toshifumi Imajo ◽  
Takashi Suemasu ◽  
Kaoru Toko

AbstractPolycrystalline Ge thin films have attracted increasing attention because their hole mobilities exceed those of single-crystal Si wafers, while the process temperature is low. In this study, we investigate the strain effects on the crystal and electrical properties of polycrystalline Ge layers formed by solid-phase crystallization at 375 °C by modulating the substrate material. The strain of the Ge layers is in the range of approximately 0.5% (tensile) to -0.5% (compressive), which reflects both thermal expansion difference between Ge and substrate and phase transition of Ge from amorphous to crystalline. For both tensile and compressive strains, a large strain provides large crystal grains with sizes of approximately 10 μm owing to growth promotion. The potential barrier height of the grain boundary strongly depends on the strain and its direction. It is increased by tensile strain and decreased by compressive strain. These findings will be useful for the design of Ge-based thin-film devices on various materials for Internet-of-things technologies.


Sign in / Sign up

Export Citation Format

Share Document