Design considerations of underlapped source/drain regions with the Gaussian doping profile in nano-double-gate MOSFETs: A quantum simulation

Morteza Charmi; Ali A. Orouji; Hamid R. Mashayekhi

doi:10.1016/j.mssp.2012.09.019

Design considerations of underlapped source/drain regions with the Gaussian doping profile in nano-double-gate MOSFETs: A quantum simulation

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2012.09.019 ◽

2013 ◽

Vol 16 (2) ◽

pp. 311-317 ◽

Cited By ~ 3

Author(s):

Morteza Charmi ◽

Ali A. Orouji ◽

Hamid R. Mashayekhi

Keyword(s):

Quantum Simulation ◽

Doping Profile ◽

Double Gate ◽

Design Considerations

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Design considerations of the sub-50 nm self-aligned double gate MOSFET with a new channel doping profile

2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) ◽

10.1109/icsict.2001.981535 ◽

2002 ◽

Author(s):

Yin Huaxiang ◽

Xu Qiuxia

Keyword(s):

Doping Profile ◽

Double Gate ◽

Design Considerations ◽

Double Gate Mosfet

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A 2D analytical model of the channel potential and threshold voltage of Double-Gate (DG) MOSFETs with vertical Gaussian doping profile

2009 International Multimedia, Signal Processing and Communication Technologies ◽

10.1109/mspct.2009.5164172 ◽

2009 ◽

Cited By ~ 4

Author(s):

P.K. Tiwari ◽

S. Kumar ◽

S. Mittal ◽

V. Srivastava ◽

U. Pandey ◽

...

Keyword(s):

Analytical Model ◽

Threshold Voltage ◽

Doping Profile ◽

Double Gate ◽

Channel Potential

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Performance Evaluation and Design Considerations of Electrically Activated Drain Extension Tunneling GNRFET: A Quantum Simulation Study

Journal of Electronic Materials ◽

10.1007/s11664-017-5686-3 ◽

2017 ◽

Vol 46 (11) ◽

pp. 6508-6517 ◽

Cited By ~ 6

Author(s):

Seyed Saleh Ghoreishi ◽

Reza Yousefi ◽

Neda Taghavi

Keyword(s):

Performance Evaluation ◽

Simulation Study ◽

Quantum Simulation ◽

Design Considerations

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2D Analysis of Breakdown Voltages for Device Dimension of Double Gate MOSFET Using Nonlinear Doping Profile

Lecture Notes in Electrical Engineering - Future Information Communication Technology and Applications ◽

10.1007/978-94-007-6516-0_44 ◽

2013 ◽

pp. 409-417

Author(s):

Hakkee Jung ◽

Dongsoo Cheong

Keyword(s):

Doping Profile ◽

Double Gate ◽

Double Gate Mosfet

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Performance enhancement of an ultra-scaled double-gate graphene nanoribbon tunnel field-effect transistor using channel doping engineering: Quantum simulation study

AEU - International Journal of Electronics and Communications ◽

10.1016/j.aeue.2020.153287 ◽

2020 ◽

Vol 122 ◽

pp. 153287 ◽

Cited By ~ 6

Author(s):

Khalil Tamersit

Keyword(s):

Simulation Study ◽

Field Effect ◽

Field Effect Transistor ◽

Performance Enhancement ◽

Quantum Simulation ◽

Graphene Nanoribbon ◽

Double Gate ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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Study on doping profile and scaling characteristics of gate and channel engineered symmetric double gate MOSFET

2016 9th International Conference on Electrical and Computer Engineering (ICECE) ◽

10.1109/icece.2016.7853904 ◽

2016 ◽

Author(s):

Md. Arafat Mahmud ◽

Md. Tashfiq Bin Kashem ◽

Samia Subrina

Keyword(s):

Doping Profile ◽

Double Gate ◽

Double Gate Mosfet

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The impact of unintentional discrete charges in a nominally undoped channel of a thin body double gate MOSFET: classical to full quantum simulation

Journal of Physics Conference Series ◽

10.1088/1742-6596/38/1/046 ◽

2006 ◽

Vol 38 ◽

pp. 192-195 ◽

Cited By ~ 1

Author(s):

A Martinez ◽

J R Barker ◽

A Svizhenko ◽

M P Anantram ◽

A R Brown ◽

...

Keyword(s):

Quantum Simulation ◽

Thin Body ◽

Double Gate ◽

Double Gate Mosfet ◽

The Impact ◽

Full Quantum

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A Threshold Voltage Model for the Short-Channel Double-Gate (DG) MOSFETs with a Vertical Gaussian Doping Profile

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2011.1151 ◽

2011 ◽

Vol 6 (2) ◽

pp. 207-213

Author(s):

Pramod Kumar Tiwari ◽

S. Jit

Keyword(s):

Threshold Voltage ◽

Doping Profile ◽

Double Gate ◽

Short Channel ◽

Threshold Voltage Model

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Quantum simulation study of dual-material double gate (DMDG) MOSFET: NEGF approach

2008 IEEE Silicon Nanoelectronics Workshop ◽

10.1109/snw.2008.5418485 ◽

2008 ◽

Cited By ~ 1

Author(s):

Zahra Arefinia ◽

Ali A. Orouji

Keyword(s):

Simulation Study ◽

Quantum Simulation ◽

Double Gate ◽

Dual Material

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Analog Design Considerations For Independently Driven Double Gate MOSfets And Their Application in a Low-Voltage OTA

2007 14th IEEE International Conference on Electronics, Circuits and Systems ◽

10.1109/icecs.2007.4510964 ◽

2007 ◽

Cited By ~ 4

Author(s):

P. Freitas ◽

G. Billiot ◽

H. Lapuyade ◽

J.B. Begueret

Keyword(s):

Low Voltage ◽

Analog Design ◽

Double Gate ◽

Design Considerations

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