Quantum simulation study of dual-material double gate (DMDG) MOSFET: NEGF approach

2008 IEEE Silicon Nanoelectronics Workshop ◽

10.1109/snw.2008.5418485 ◽

2008 ◽

Author(s):

Zahra Arefinia ◽

Ali A. Orouji

Keyword(s):

Simulation Study ◽

Quantum Simulation ◽

Double Gate ◽

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Performance enhancement of an ultra-scaled double-gate graphene nanoribbon tunnel field-effect transistor using channel doping engineering: Quantum simulation study

AEU - International Journal of Electronics and Communications ◽

10.1016/j.aeue.2020.153287 ◽

2020 ◽

Vol 122 ◽

pp. 153287 ◽

Author(s):

Khalil Tamersit

Keyword(s):

Simulation Study ◽

Field Effect ◽

Field Effect Transistor ◽

Performance Enhancement ◽

Quantum Simulation ◽

Graphene Nanoribbon ◽

Double Gate ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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Full quantum simulation study of a nano tri-material double gate silicon-on-insulator MOSFET

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2012.11.007 ◽

2013 ◽

Vol 16 (5) ◽

pp. 1240-1247 ◽

Author(s):

Zahra Arefinia

Keyword(s):

Simulation Study ◽

Quantum Simulation ◽

Silicon On Insulator ◽

Double Gate ◽

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Quantum simulation study of double gate hetero gate dielectric and LDD doping graphene nanoribbon p–i–n tunneling FETs

Journal of Semiconductors ◽

10.1088/1674-4926/35/6/064006 ◽

2014 ◽

Vol 35 (6) ◽

pp. 064006 ◽

Author(s):

Wei Wang ◽

Gongshu Yue ◽

Xiao Yang ◽

Lu Zhang ◽

Ting Zhang

Keyword(s):

Simulation Study ◽

Gate Dielectric ◽

Quantum Simulation ◽

Graphene Nanoribbon ◽

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Quantum simulation study of single halo dual-material gate CNTFETs

Solid-State Electronics ◽

10.1016/j.sse.2013.10.014 ◽

2014 ◽

Vol 91 ◽

pp. 147-151 ◽

Author(s):

Wei Wang ◽

Na Li ◽

Chunping Xia ◽

Guangran Xiao ◽

Yuzhou Ren ◽

...

Keyword(s):

Simulation Study ◽

Quantum Simulation ◽

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Improved performance of nanoscale junctionless carbon nanotube tunneling FETs using dual-material source gate design: A quantum simulation study

AEU - International Journal of Electronics and Communications ◽

10.1016/j.aeue.2020.153491 ◽

2020 ◽

Vol 127 ◽

pp. 153491 ◽

Author(s):

Khalil Tamersit

Keyword(s):

Carbon Nanotube ◽

Simulation Study ◽

Quantum Simulation ◽

Material Source ◽

Improved Performance ◽

Dual Material ◽

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Influence of Localized Interface Charges on Drain Current of Dual-Material Double-Gate Tunnel FETs

2018 3rd International Conference for Convergence in Technology (I2CT) ◽

10.1109/i2ct.2018.8529418 ◽

2018 ◽

Author(s):

Sanjay Kumar ◽

Kamlaksha Baral ◽

Sweta Chander ◽

P. K. Singh ◽

Kunal Singh ◽

...

Keyword(s):

Drain Current ◽

Double Gate ◽

Interface Charges ◽

Tunnel Fets ◽

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Simulation study on a new dual-material nanowire MOS surrounding-gate transistor

2010 3rd International Nanoelectronics Conference (INEC) ◽

10.1109/inec.2010.5424621 ◽

2010 ◽

Author(s):

Wang Zhou ◽

Lining Zhang ◽

Yiwen Xu ◽

Lin Chen ◽

F. He

Keyword(s):

Simulation Study ◽

Surrounding Gate ◽

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Resonant gate tunneling current in double-gate SOI: a simulation study

IEEE Transactions on Electron Devices ◽

10.1109/ted.2003.920126 ◽

2003 ◽

Vol 50 (12) ◽

pp. 2579-2581 ◽

Author(s):

Chang-Hoon Choi ◽

Zhiping Yu ◽

R.W. Dutton

Keyword(s):

Simulation Study ◽

Tunneling Current ◽

Double Gate ◽

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An Accurate Drain Current Model of Dual Material Double Gate Metal Oxide Semiconductor Field Effect Transistor

Silicon ◽

10.1007/s12633-021-01321-y ◽

2021 ◽

Author(s):

Himeli Chakrabarti ◽

Reshmi Maity ◽

S. Baishya ◽

N. P. Maity

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Current Model ◽

Drain Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Effect Transistor ◽

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Design considerations of underlapped source/drain regions with the Gaussian doping profile in nano-double-gate MOSFETs: A quantum simulation

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2012.09.019 ◽

2013 ◽

Vol 16 (2) ◽

pp. 311-317 ◽

Author(s):

Morteza Charmi ◽

Ali A. Orouji ◽

Hamid R. Mashayekhi

Keyword(s):

Quantum Simulation ◽

Doping Profile ◽

Double Gate ◽

Design Considerations

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