Diamond Schottky barrier diodes with floating metal rings for high breakdown voltage

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2019.03.004 ◽

2019 ◽

Vol 97 ◽

pp. 101-105 ◽

Author(s):

Juan Wang ◽

Dan Zhao ◽

Wei Wang ◽

Xiaofan Zhang ◽

Yanfeng Wang ◽

...

Keyword(s):

Schottky Barrier ◽

Breakdown Voltage ◽

Schottky Barrier Diodes ◽

High Breakdown Voltage ◽

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High breakdown voltage 4H-SiC Schottky Barrier Diodes with floating metal rings for MMIC applications

2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings ◽

10.1109/icsict.2006.306602 ◽

2006 ◽

Author(s):

Chun-hua Zhou ◽

Xiao-rong Luo ◽

Xiao-chuan Deng ◽

Jin-ping Zhang ◽

Zhao-ji Li ◽

...

Keyword(s):

Schottky Barrier ◽

Breakdown Voltage ◽

Schottky Barrier Diodes ◽

High Breakdown Voltage ◽

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Numerical simulation of p-type diamond Schottky barrier diodes for high breakdown voltage

Japanese Journal of Applied Physics ◽

10.7567/jjap.56.06ge09 ◽

2017 ◽

Vol 56 (6S1) ◽

pp. 06GE09

Author(s):

Dong-Won Kang ◽

Hae Nyung Chang ◽

Min-Woo Ha

Keyword(s):

Numerical Simulation ◽

Schottky Barrier ◽

Breakdown Voltage ◽

Schottky Barrier Diodes ◽

High Breakdown Voltage ◽

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Design and fabrication of high breakdown voltage 4H-SiC Schottky barrier diodes with floating metal ring edge terminations

Solid-State Electronics ◽

10.1016/j.sse.2004.11.006 ◽

2005 ◽

Vol 49 (3) ◽

pp. 437-444 ◽

Author(s):

Shu-Cheng Chang ◽

Shui-Jinn Wang ◽

Kai-Ming Uang ◽

Bor-Wen Liou

Keyword(s):

Schottky Barrier ◽

Breakdown Voltage ◽

Schottky Barrier Diodes ◽

High Breakdown Voltage

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High Breakdown Voltage GaN Schottky Barrier Diode employing Floating Metal Rings on AlGaN/GaN Hetero-junction

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. ◽

10.1109/ispsd.2005.1487997 ◽

2005 ◽

Author(s):

Min-Woo Ha Seung-Chul Lee

Keyword(s):

Schottky Barrier ◽

Breakdown Voltage ◽

Schottky Barrier Diode ◽

High Breakdown Voltage ◽

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Characteristics of high breakdown voltage Schottky barrier diodes using p+-polycrystalline-silicon diffused-guard-ring

Solid-State Electronics ◽

10.1016/s0038-1101(99)00258-0 ◽

2000 ◽

Vol 44 (4) ◽

pp. 631-638 ◽

Author(s):

Bor Wen Liou ◽

Chung Len Lee

Keyword(s):

Schottky Barrier ◽

Breakdown Voltage ◽

Polycrystalline Silicon ◽

Schottky Barrier Diodes ◽

High Breakdown Voltage

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GaN-based quasi-vertical Schottky barrier diodes with the sidewall field plate termination for obtaining low leakage current and high breakdown voltage

10.1109/peas53589.2021.9628512 ◽

2021 ◽

Author(s):

Fuping Huang ◽

Chunshuang Chu ◽

Yonghui Zhang ◽

Kangkai Tian ◽

Xingyu Jia ◽

...

Keyword(s):

Schottky Barrier ◽

Leakage Current ◽

Breakdown Voltage ◽

Schottky Barrier Diodes ◽

Field Plate ◽

High Breakdown Voltage ◽

Low Leakage ◽

Low Leakage Current

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Design Strategies for Mesa-Type GaN-Based Schottky Barrier Diodes for Obtaining High Breakdown Voltage and Low Leakage Current

IEEE Transactions on Electron Devices ◽

10.1109/ted.2020.2978007 ◽

2020 ◽

Vol 67 (5) ◽

pp. 1931-1938

Author(s):

Xingyu Jia ◽

Sung-Wen Huang Chen ◽

Yajin Liu ◽

Xu Hou ◽

Yonghui Zhang ◽

...

Keyword(s):

Schottky Barrier ◽

Leakage Current ◽

Breakdown Voltage ◽

Schottky Barrier Diodes ◽

Design Strategies ◽

High Breakdown Voltage ◽

Low Leakage ◽

Low Leakage Current

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Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates

Applied Physics Express ◽

10.1143/apex.3.081001 ◽

2010 ◽

Vol 3 (8) ◽

pp. 081001 ◽

Author(s):

Yu Saitoh ◽

Kazuhide Sumiyoshi ◽

Masaya Okada ◽

Taku Horii ◽

Tomihito Miyazaki ◽

...

Keyword(s):

Dislocation Density ◽

Schottky Barrier ◽

Breakdown Voltage ◽

High Mobility ◽

Schottky Barrier Diodes ◽

High Breakdown Voltage ◽

Low Dislocation Density

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Fabrication of high breakdown voltage silicon Schottky barrier diodes using various edge termination structures

Thin Solid Films ◽

10.1016/j.tsf.2009.04.031 ◽

2009 ◽

Vol 517 (24) ◽

pp. 6558-6564 ◽

Author(s):

Bor Wen Liou

Keyword(s):

Schottky Barrier ◽

Breakdown Voltage ◽

Schottky Barrier Diodes ◽

Edge Termination ◽

High Breakdown Voltage

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Ga2O3 field-plated schottky barrier diodes with a breakdown voltage of over 1 kV

2016 74th Annual Device Research Conference (DRC) ◽

10.1109/drc.2016.7676205 ◽

2016 ◽

Author(s):

Keita Konishi ◽

Ken Goto ◽

Quang Tu Thieu ◽

Rie Togashi ◽

Hisashi Murakami ◽

...

Keyword(s):

Schottky Barrier ◽

Breakdown Voltage ◽

Schottky Barrier Diodes

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