Hole mobility in Strained Si/Relaxed SiGe/Si(110) hetero structures studied by gated Hall measurements

Applying KP theory combined with deformation potential we obtained the valence band structure, and based on this result we calculated the orientation-dependent effective mass which is also called conductivity effective mass in strained Si1-xGex/(001)Si in this research, and furthermore ,we established the scattering rate model by using the density-of-states effective mass. On the basis of conductivity effective mass and scattering rate model, utilizing analytical method and relaxation time approximation we obtained the dependence of the value of hole mobility on stress and doping concentration in strained Si1-xGex/(001)Si along different crystal orientations. Compare to the unstrained Si, the anisotropy of hole mobility is more obvious in strained Si1-xGex/(001)Si, for example, It shows that under the same stress and doping concentration (Ni=1x1014cm-3, x=0.4), the value of hole mobility along [010] crystal orientation is visibly higher than other crystal orientations. This result can provide valuable references to the research of hole mobility of strained Si1-xGex materials and the design of devices.

Download Full-text

Strained Silicon On Insulator wafers made by the Smart Cut™ technology

MRS Proceedings ◽

10.1557/proc-809-b2.3 ◽

2004 ◽

Vol 809 ◽

Cited By ~ 1

Author(s):

B. Ghyselen ◽

Y. Bogumilowicz ◽

C. Aulnette ◽

A. Abbadie ◽

B. Osternaud ◽

...

Keyword(s):

Thin Films ◽

Hole Mobility ◽

Silicon On Insulator ◽

Strained Silicon ◽

Layer Transfer ◽

Strained Si ◽

Engineered Substrates

ABSTRACTStrained Silicon On Insulator wafers are today envisioned as a natural and powerfulenhancement to standard SOI and/or bulk-like strained Si layers. For MOSFETs applications, thisnew technology potentially combines enhanced devices scalability allowed by thin films andenhanced electron and hole mobility in strained silicon. This paper is intended to demonstrate byexperimental results how a layer transfer technique such as the Smart Cut™ technology can be usedto obtain good quality tensile Strained Silicon On insulator wafers. Detailed experiments andcharacterizations will be used to characterize these engineered substrates and show that they arecompatible with the applications.

Download Full-text

Hole mobility enhancements and alloy scattering-limited mobility in tensile strained Si/SiGe surface channel metal–oxide–semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1499213 ◽

2002 ◽

Vol 92 (7) ◽

pp. 3745-3751 ◽

Cited By ~ 145

Author(s):

C. W. Leitz ◽

M. T. Currie ◽

M. L. Lee ◽

Z.-Y. Cheng ◽

D. A. Antoniadis ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Hole Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si ◽

Limited Mobility ◽

Alloy Scattering

Download Full-text

Low-Cost and Highly Manufacturable Strained-Si Channel Technique for Strong Hole Mobility Enhancement on 35-nm Gate Length pMOSFETs

IEEE Transactions on Electron Devices ◽

10.1109/ted.2007.895871 ◽

2007 ◽

Vol 54 (6) ◽

pp. 1394-1401 ◽

Cited By ~ 7

Author(s):

Qiuxia Xu ◽

Xiaofeng Duan ◽

Haihua Liu ◽

Zhengsheng Han ◽

Tianchun Ye

Keyword(s):

Low Cost ◽

Hole Mobility ◽

Gate Length ◽

Strained Si

Download Full-text

Hole mobility enhancements in strained Si/Si1−yGey p-type metal-oxide-semiconductor field-effect transistors grown on relaxed Si1−xGex (x

Applied Physics Letters ◽

10.1063/1.1423774 ◽

2001 ◽

Vol 79 (25) ◽

pp. 4246-4248 ◽

Cited By ~ 92

Author(s):

C. W. Leitz ◽

M. T. Currie ◽

M. L. Lee ◽

Z.-Y. Cheng ◽

D. A. Antoniadis ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Hole Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si ◽

P Type

Download Full-text

IN SITU HALL MEASUREMENTS OF MACROSCOPIC ELECTRICAL PROPERTIES OF CHROMIUM-COVERED Si(111) SURFACES

Surface Review and Letters ◽

10.1142/s0218625x99000032 ◽

1999 ◽

Vol 06 (01) ◽

pp. 7-12 ◽

Cited By ~ 6

Author(s):

N. G. GALKIN ◽

D. L. GOROSHKO ◽

A. V. KONCHENKO ◽

V. A. IVANOV ◽

A. S. GOURALNIK

Keyword(s):

Electrical Properties ◽

Hole Concentration ◽

Hole Mobility ◽

Epitaxial Films ◽

Surface Phase ◽

Sheet Resistivity ◽

Hall Measurements ◽

Phase Layers ◽

Surface Phases

The first in situ Hall measurements of the ordered chromium surface phases on Si(111) substrate and CrSi(111) epitaxial films after their formation are presented. Formation of Si (111)-(1× 1)- Cr (0.1 nm Cr) and Si(111)-[([Formula: see text])/30°]-Cr (0.3 nm Cr) surface phases results in an increase in the sheet resistivity of Si(111)-Cr surface phase samples. The conductivities along the surface phases at these chromium thicknesses are very low. The conductivity decrease is caused by a decrease in the electron mobility in the surface phase layers. Formation of an epitaxial CrSi(111) layer with averaged Hall parameters (hole mobility of 440 cm 2· V -1· s -1, sheet resistivity of 2.2·104 Ω-1 and sheet hole concentration of 0.65·1012 cm -2) has been observed at 1.5–1.8 nm of chromium thickness.

Download Full-text