The redox of hydroxyl-assisted metallic filament induced resistive switching memory based on a biomaterial-constructed sustainable and environment-friendly device

Metallic Filament ◽

Proceedings of 2010 International Symposium on VLSI Technology, System and Application ◽

Low current bipolar resistive switching memory using Cu metallic filament in Ge0.2Se0.8 solid-electrolyte

10.1109/vtsa.2010.5488915 ◽

2010 ◽

Author(s):

S. Z. Rahaman ◽

S. Maikap ◽

C.-H. Lin ◽

P.-J. Tzeng ◽

H. Y. Lee ◽

...

Keyword(s):

Solid Electrolyte ◽

Resistive Switching ◽

Bipolar Resistive Switching ◽

Metallic Filament ◽

Bipolar Resistive Switching Memory Using Cu Metallic Filament in Ge[sub 0.4]Se[sub 0.6] Solid Electrolyte

Electrochemical and Solid-State Letters ◽

10.1149/1.3339449 ◽

2010 ◽

Vol 13 (5) ◽

pp. H159 ◽

Cited By ~ 47

Author(s):

S. Z. Rahaman ◽

S. Maikap ◽

H.-C. Chiu ◽

C.-H. Lin ◽

T.-Y. Wu ◽

...

Keyword(s):

Solid Electrolyte ◽

Resistive Switching ◽

Bipolar Resistive Switching ◽

Metallic Filament ◽

Low power resistive switching memory using Cu metallic filament in Ge0.2Se0.8 solid-electrolyte

Microelectronics Reliability ◽

10.1016/j.microrel.2010.01.022 ◽

2010 ◽

Vol 50 (5) ◽

pp. 643-646 ◽

Cited By ~ 10

Author(s):

S.Z. Rahaman ◽

S. Maikap

Keyword(s):

Low Power ◽

Solid Electrolyte ◽

Resistive Switching ◽

Metallic Filament ◽

A versatile multifaceted resistive switching memory activated by light and ion irradiation in poly (3-octylthiophene)-zinc oxide hybrids

Organic Electronics ◽

10.1016/j.orgel.2020.105932 ◽

2020 ◽

Vol 87 ◽

pp. 105932 ◽

Cited By ~ 1

Author(s):

Jitendra Singh ◽

R.G. Singh ◽

Subodh K. Gautam ◽

Himanshi Gupta ◽

Fouran Singh

Keyword(s):

Zinc Oxide ◽

Resistive Switching ◽

Ion Irradiation ◽

Resistive Switching Memory: Smart Design of Resistive Switching Memory by an In Situ Current‐Induced Oxidization Process on a Single Crystalline Metallic Nanowire (Adv. Electron. Mater. 5/2021)

Advanced Electronic Materials ◽

10.1002/aelm.202170015 ◽

2021 ◽

Vol 7 (5) ◽

pp. 2170015

Author(s):

Yu‐Chuan Shih ◽

Ling Lee ◽

Kai‐De Liang ◽

Arumugam Manikandan ◽

Wen‐Wu Liu ◽

...

Keyword(s):

Resistive Switching ◽

Single Crystalline ◽

Polymer Nanocomposites for Resistive Switching Memory

Polymer Nanocomposite Materials ◽

10.1002/9783527826490.ch8 ◽

2021 ◽

pp. 211-246

Author(s):

Qazi Muhammad Saqib ◽

Muhammad Umair Khan ◽

Jinho Bae

Keyword(s):

Polymer Nanocomposites ◽

Resistive Switching ◽

Spray-Coated, Volatile and Nonvolatile, Two-Terminal, Resistive Switching Memory Devices Comprising Liquid-Exfoliated Black Phosphorus and Graphene Layers

IEEE Transactions on Electron Devices ◽

10.1109/ted.2020.3029552 ◽

2020 ◽

Vol 67 (12) ◽

pp. 5484-5489

Author(s):

Yooyeon Jo ◽

Christos Dimitrakopoulos

Keyword(s):

Resistive Switching ◽

Black Phosphorus ◽

Memory Devices ◽

Graphene Layers ◽

Flexible Three-Bit-Per-Cell Resistive Switching Memory Using a-IGZO TFTs

IEEE Electron Device Letters ◽

10.1109/led.2013.2278098 ◽

2013 ◽

Vol 34 (10) ◽

pp. 1265-1267 ◽

Cited By ~ 14

Author(s):

Shih-Chieh Wu ◽

Hsien-Tsung Feng ◽

Ming-Jiue Yu ◽

I-Ting Wang ◽

Tuo-Hung Hou

Keyword(s):

Resistive Switching ◽

Ultralow-Power Ni/GeO/STO/TaN Resistive Switching Memory

IEEE Electron Device Letters ◽

10.1109/led.2010.2055828 ◽

2010 ◽

Vol 31 (9) ◽

pp. 1020-1022 ◽

Cited By ~ 18

Author(s):

C. H. Cheng ◽

Albert Chin ◽

F. S. Yeh

Keyword(s):

Resistive Switching ◽

Ultralow Power ◽

Abnormal Volatile Memory Characteristic in Normal Nonvolatile ZnSnO Resistive Switching Memory

IEEE Transactions on Electron Devices ◽

10.1109/ted.2018.2831906 ◽

2018 ◽

Vol 65 (7) ◽

pp. 2812-2819 ◽

Cited By ~ 4

Author(s):

Chih-Chieh Hsu ◽

Yu-Ting Chen ◽

Po-Yang Chuang ◽

Yu-Sheng Lin

Keyword(s):

Resistive Switching ◽

Memory Characteristic ◽

Volatile Memory ◽