The materials science beamline at the Swiss Light Source

Author(s):  
B.D. Patterson ◽  
Ch. Brönnimann ◽  
D. Maden ◽  
F. Gozzo ◽  
A. Groso ◽  
...  
2013 ◽  
Vol 20 (5) ◽  
pp. 667-682 ◽  
Author(s):  
P. R. Willmott ◽  
D. Meister ◽  
S. J. Leake ◽  
M. Lange ◽  
A. Bergamaschi ◽  
...  

The Materials Science beamline at the Swiss Light Source has been operational since 2001. In late 2010, the original wiggler source was replaced with a novel insertion device, which allows unprecedented access to high photon energies from an undulator installed in a medium-energy storage ring. In order to best exploit the increased brilliance of this new source, the entire front-end and optics had to be redesigned. In this work, the upgrade of the beamline is described in detail. The tone is didactic, from which it is hoped the reader can adapt the concepts and ideas to his or her needs.


2004 ◽  
Vol 362 (1-2) ◽  
pp. 206-217 ◽  
Author(s):  
F. Gozzo ◽  
B. Schmitt ◽  
Th. Bortolamedi ◽  
C. Giannini ◽  
A. Guagliardi ◽  
...  

Author(s):  
Domenik Schleier ◽  
Engelbert Reusch ◽  
Marius Gerlach ◽  
Tobias Preitschopf ◽  
Deb Pratim Mukhopadhyay ◽  
...  

The reaction kinetics of the isomers of the methylallyl radical with molecular oxygen has been studied in a flow tube reactor at the vacuum ultraviolet (VUV) beamline of the Swiss Light Source storage ring.


2018 ◽  
Vol 24 (S2) ◽  
pp. 172-175 ◽  
Author(s):  
Mirko Holler ◽  
Jorg Raabe ◽  
Ana Diaz ◽  
Manuel Guizar-Sicairos ◽  
Esther H. R. Tsai ◽  
...  

2002 ◽  
Author(s):  
Marco Stampanoni ◽  
Peter Wyss ◽  
Rafael Abela ◽  
Gunther L. Borchert ◽  
Detlef Vermeulen ◽  
...  

2009 ◽  
Vol 16 (2) ◽  
pp. 143-151 ◽  
Author(s):  
Robin L. Owen ◽  
James M. Holton ◽  
Clemens Schulze-Briese ◽  
Elspeth F. Garman

Accurate measurement of photon flux from an X-ray source, a parameter required to calculate the dose absorbed by the sample, is not yet routinely available at macromolecular crystallography beamlines. The development of a model for determining the photon flux incident on pin diodes is described here, and has been tested on the macromolecular crystallography beamlines at both the Swiss Light Source, Villigen, Switzerland, and the Advanced Light Source, Berkeley, USA, at energies between 4 and 18 keV. These experiments have shown that a simple model based on energy deposition in silicon is sufficient for determining the flux incident on high-quality silicon pin diodes. The derivation and validation of this model is presented, and a web-based tool for the use of the macromolecular crystallography and wider synchrotron community is introduced.


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