Use of the nuclear microprobe for the characterization of ion-implanted spinel

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/j.nimb.2005.06.228 ◽

2005 ◽

Vol 240 (1-2) ◽

pp. 308-312

Author(s):

A. Gentils ◽

S.E. Enescu ◽

L. Thomé ◽

H. Khodja

Keyword(s):

Nuclear Microprobe ◽

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Structural characterization of ion implanted HOPG and glass-like carbon by laser Raman spectroscopy

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/0168-583x(93)90827-s ◽

1993 ◽

Vol 80-81 ◽

pp. 1489-1493 ◽

Author(s):

Hiroshi Watanabe ◽

Katsuo Takahashi ◽

Masaya Iwaki

Keyword(s):

Raman Spectroscopy ◽

Structural Characterization ◽

Laser Raman Spectroscopy ◽

Laser Raman ◽

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Improved electrical characterization of Al–Ti ohmic contacts on p-type ion implanted 6H-SiC

Semiconductor Science and Technology ◽

10.1088/0268-1242/18/6/328 ◽

2003 ◽

Vol 18 (6) ◽

pp. 554-559 ◽

Author(s):

F Moscatelli ◽

A Scorzoni ◽

A Poggi ◽

G C Cardinali ◽

R Nipoti

Keyword(s):

Ohmic Contacts ◽

Electrical Characterization ◽

P Type ◽

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Characterization of Lattice Damage in Ion Implanted Silicon: Monte Carlo Simulation Combined with Double Crystal X-Ray Diffraction

phys stat sol (a) ◽

10.1002/pssa.2210910254 ◽

1985 ◽

Vol 91 (2) ◽

pp. K125-K127 ◽

Author(s):

F. Cembali ◽

A. M. Mazzone ◽

M. Servidori

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

X Ray Diffraction ◽

Double Crystal ◽

X Ray ◽

Lattice Damage ◽

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Electrical characterization of ion-implanted silicon-on-sapphire

Microelectronics Reliability ◽

10.1016/0026-2714(84)90431-1 ◽

1984 ◽

Vol 24 (4) ◽

pp. 825

Keyword(s):

Electrical Characterization ◽

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Modeling and characterization of ion-implanted GaAs MESFET's

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1987.22988 ◽

1987 ◽

Vol 34 (4) ◽

pp. 726-732 ◽

Author(s):

A. Peczalski ◽

Chung-Hsu Chen ◽

M.S. Shur ◽

S.M. Baier

Keyword(s):

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Characterization of the Intensity Distribution in a Single Laser Spot Applied to the Annealing of Ion-Implanted Silicon

Crystal Research and Technology ◽

10.1002/crat.2170210118 ◽

1986 ◽

Vol 21 (1) ◽

pp. 79-87 ◽

Author(s):

H. Johansen ◽

H. Bartsch ◽

H. Exner ◽

G. Zscherpe

Keyword(s):

Intensity Distribution ◽

Single Laser ◽

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Thermal characterization of Ag and Ag+N ion implanted ultra-high molecular weight polyethylene (UHMWPE)

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/j.nimb.2007.04.102 ◽

2007 ◽

Vol 261 (1-2) ◽

pp. 699-703 ◽

Author(s):

E. Sokullu Urkac ◽

A. Oztarhan ◽

F. Tihminlioglu ◽

N. Kaya ◽

D. Ila ◽

...

Keyword(s):

Molecular Weight ◽

High Molecular Weight ◽

Thermal Characterization ◽

Ultra High Molecular Weight ◽

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Characterization of the Photoacoustic Optical and Thermal Properties of Ion-Implanted Si and GaAs Layers

Photoacoustic and Photothermal Phenomena - Springer Series in Optical Sciences ◽

10.1007/978-3-540-48181-2_65 ◽

1988 ◽

pp. 252-253

Author(s):

U. Zammit ◽

M. Marinelli ◽

F. Scudieri ◽

S. Martellucci

Keyword(s):

Thermal Properties ◽

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Influence of Nonlinearity on Electronic Transport Characterization of Ion-Implanted Silicon Wafers with Photocarrier Radiometry

International Journal of Thermophysics ◽

10.1007/s10765-019-2578-1 ◽

2019 ◽

Vol 41 (1) ◽

Author(s):

Xiaoke Lei ◽

Bincheng Li ◽

Qiming Sun ◽

Jing Wang ◽

Chunming Gao

Keyword(s):

Electronic Transport ◽

Silicon Wafers ◽

Photocarrier Radiometry ◽

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Characterization of excimer laser annealing of ion implanted Si

IEEE Electron Device Letters ◽

10.1109/edl.1982.25569 ◽

1982 ◽

Vol 3 (10) ◽

pp. 280-283 ◽

Author(s):

R.T. Young ◽

G.A. van der Leeden ◽

J. Narayan ◽

W.H. Christie ◽

R.F. Wood ◽

...

Keyword(s):

Excimer Laser ◽

Laser Annealing ◽

Excimer Laser Annealing ◽

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