Influence of annealing temperatures and time on the photoluminescence properties of Si nanocrystals embedded in SiO2

Author(s):  
X.D. Zhou ◽  
F. Ren ◽  
X.H. Xiao ◽  
G.X. Cai ◽  
C.Z. Jiang
2001 ◽  
Vol 45 (8) ◽  
pp. 1487-1494 ◽  
Author(s):  
Tsutomu Shimizu-Iwayama ◽  
Takayuki Hama ◽  
David E Hole ◽  
Ian W Boyd

2000 ◽  
Vol 72 (1-2) ◽  
pp. 245-255 ◽  
Author(s):  
I. N. Germanenko ◽  
M. Dongol ◽  
Y. B. Pithawalla ◽  
M. Samy El-Shall ◽  
J. A. Carlisle

Web-like aggregates of coalesced Si nanocrystals produced by a laser vaporization-controlled condensation technique show luminescence properties that are similar to those of porous Si. The results are consistent with a quantum confinement mechanism as the source of the red photoluminescence (PL) in this system. The oxidized Si nanoparticles do not exhibit the red PL that is characteristic of the surface-oxidized Si nanocrystals. The nanoparticles are allowed to oxidize slowly, and the PL is measured as a function of the exposure time in air. A significant blue shift in the red PL peak is observed as a result of the slow oxidation process. The dependence of quantum size effects on the bonding structure is established by correlating the PL data with the photon-yield electronic structure measurements made at the Advanced Light Source. The results indicate that as the nanoparticles oxidize, the radius of the crystalline core decreases in size, which gives rise to a larger bandgap and consequently to the observed blue-shift in the PL band. The correlation between the PL, SXF, and NEXAFS results provides further support for the quantum confinement mechanism as the origin of the visible PL in Si nanocrystals.


2004 ◽  
Vol 85 (7) ◽  
pp. 1158-1160 ◽  
Author(s):  
Minoru Fujii ◽  
Yasuhiro Yamaguchi ◽  
Yuji Takase ◽  
Keiichi Ninomiya ◽  
Shinji Hayashi

1997 ◽  
Vol 486 ◽  
Author(s):  
J. Linnros ◽  
A. Galeckas ◽  
A. Pareaud ◽  
N. Lalic ◽  
V. Grivickas ◽  
...  

AbstractTime resolved photoluminescence (PL) decays have been measured for Si nanocrystals embedded in silicon dioxide. The nanocrystals were formed by Si implantation followed by thermal annealing at 800 – 1200 °C. The observed PL peaked in the wavelength range 640 – 850 nm and the PL decay exhibited a stretched exponential lineshape, characterized by a relatively large time constant. A nonlinear dose dependence of the PL yield and an observed redshifting for increasing doses and/or higher annealing temperatures is discussed in terms of a nucleation and growth mechanism for the nanocrystals. Finally, we argue that Auger recombination is effective at high excitation densities explaining a wavelength dependent saturation of the PL intensity.


2013 ◽  
Vol 721 ◽  
pp. 16-19
Author(s):  
Chang Qing Li ◽  
Pei Jia Liu ◽  
Yong Mei Wang ◽  
K. Murakami

Er-dispersed silicon-rich silicon oxide (SRSO:Er) films have been fabricated by pulsed laser ablation technique. After deposition, the films were annealed in Ar ambient at different temperatures for 30 min to generate SiO2films containing Si nanocrystals (Si-nc) and Er ions. The relationship between Er photoluminescence (PL) intensity and annealing temperature was investigated by PL spectrums analysis at room temperature. Transmission Electron Microscopy (TEM) and Energy Dispersive X-ray Spectrometer (EDS) were used to observe the samples. Experimental results show that high-density Si-nc generate when the annealing temperature increases to 1000°C, however, PL intensity of Er decreases due to Er atoms segregated out in SiO2film and formed large particles.


2013 ◽  
Vol 49 (3) ◽  
pp. 1353-1358 ◽  
Author(s):  
Xinzhan Wang ◽  
Xiang Yu ◽  
Wei Yu ◽  
Huina Feng ◽  
Jin Wang ◽  
...  

2008 ◽  
Vol 33 (1) ◽  
pp. 141-144 ◽  
Author(s):  
Nobuyuki Ishikura ◽  
Minoru Fujii ◽  
Masaki Inui ◽  
Shinji Hayashi

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