A setup for probing ultra-short soft X-ray diffraction by means of curved multilayer structures

AbstractMicrolaminate coatings are made of many alternating layers of two hard materials that, when combined in very thin layer on the nanometer scale, produce coatings with hardness that approaches diamond. In this report, we address these properties, from our investigations on the multilayer structures of titanium carbide (TIC) and diamond-like carbon (DLC) deposited on Si (100) substrates using pulsed laser deposition (PLD) technique. X-ray diffraction and Raman spectroscopy were used for the structural studies and the mechanical properties were analysed by the nano-indention technique. Microlaminate coatings of TiC/DLC and DLC/TiC coatings with varying layers were deposited on Si(100) substrates. Analysis of mechanical properties revealed that the hardness and modulus values of the multi-layers lie between those of monolithic coatings of TIC and DLC.

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Use of related parameters in X-ray diffraction analysis of multilayer structures with allowance for the layer growth time

Technical Physics ◽

10.1134/s1063784214030293 ◽

2014 ◽

Vol 59 (3) ◽

pp. 402-406 ◽

Cited By ~ 3

Author(s):

P. A. Yunin ◽

Yu. N. Drozdov ◽

M. N. Drozdov ◽

A. V. Novikov ◽

D. V. Yurasov ◽

...

Keyword(s):

Diffraction Analysis ◽

Layer Growth ◽

Multilayer Structures ◽

Growth Time ◽

X Ray Diffraction ◽

X Ray

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Beryllium-Based Multilayer Structures

MRS Proceedings ◽

10.1557/proc-382-329 ◽

1995 ◽

Vol 382 ◽

Cited By ~ 3

Author(s):

D. G. Stearns ◽

K. M. Skulina ◽

M. Wall ◽

C. S. Alford ◽

R. M. Bionta ◽

...

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Normal Incidence ◽

Sputter Deposition ◽

Multilayer Structures ◽

X Ray Diffraction ◽

X Ray ◽

Transmission Electron ◽

Magnetron Sputter Deposition ◽

Magnetron Sputter

ABSTRACTMultilayer (ML) structures composed of Mo-Be, Ru-Be and Rh-Be with bilayer periods of - 6 nm have been grown using dc magnetron sputter deposition. The ML microstructure has been characterized using x-ray diffraction and high-resolution transmission electron microscopy, and the normal incidence reflectivity has been measured at soft x-ray wavelengths.

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Pulsed Laser Deposition of Epitaxial Sr(RuxSn1-x)O3 Thin Film Electrodes and KNbO3/Sr(RuxSnl-x)O3 Bilayers

MRS Proceedings ◽

10.1557/proc-401-203 ◽

1995 ◽

Vol 401 ◽

Cited By ~ 1

Author(s):

H.-M. Christen ◽

L. A. Boatner ◽

L. Q. Englisht ◽

L. A. Géa ◽

P. J. Marrero ◽

...

Keyword(s):

Thin Film ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

Multilayer Structures ◽

X Ray Diffraction ◽

Lattice Match ◽

X Ray ◽

Resistivity Measurements ◽

Ion Channeling

AbstractSr(RuxSnl-x)O3 is proposed as a new conducting oxide for use in epitaxial multilayer structures. The Sr(Ru0.48Sn0.52)O3 composition exhibits an excellent lattice match with (100)-oriented KTaO3, and films of this composition grown by pulsed laser deposition on KTaO3, SrTiO3, and LaAIO3 substrates have been analyzed by X-ray diffraction, Rutherford backscattering/ion channeling, and resistivity measurements. Epitaxial KNbO3/Sr(Ru0 48Sn0.52)O3 bilayers have been successfully grown.

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X-Ray Diffraction from Multilayer Structures with Statistically Distributed Microdefects

phys stat sol (a) ◽

10.1002/pssa.2211360102 ◽

1993 ◽

Vol 136 (1) ◽

pp. 9-19 ◽

Cited By ~ 22

Author(s):

V. I. Punegov

Keyword(s):

Multilayer Structures ◽

X Ray Diffraction ◽

X Ray

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High-resolution X-ray diffraction analysis of AlxGa1−xN/InxGa1−xN/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations

Journal of Applied Physics ◽

10.1063/1.4875382 ◽

2014 ◽

Vol 115 (17) ◽

pp. 174507 ◽

Cited By ~ 25

Author(s):

Sanjay Kumar Jana ◽

Partha Mukhopadhyay ◽

Saptarsi Ghosh ◽

Sanjib Kabi ◽

Ankush Bag ◽

...

Keyword(s):

High Resolution ◽

Diffraction Analysis ◽

Multilayer Structures ◽

X Ray Diffraction ◽

X Ray ◽

Theoretical Simulations

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Characterization of (Al,Ga)As/GaAs Multilayer Structures by X-Ray Interference

MRS Proceedings ◽

10.1557/proc-208-237 ◽

1990 ◽

Vol 208 ◽

Cited By ~ 3

Author(s):

M. S. Goorsky ◽

T. F. Kuech

Keyword(s):

Gaas Layer ◽

Multilayer Structures ◽

Interference Effects ◽

X Ray Diffraction ◽

X Ray ◽

Al Content ◽

Device Structures ◽

Experimental Resolution ◽

Specific Device

ABSTRACTAn experimental study of x-ray interference effects from GaAs/AlxGa1−xAs multilayer structures was conducted. The presence of a GaAs layer, whose thickness ranged from 50 Å to 10 μm, between two Al0.30Ga0.70As layers was found to significantly affect the x-ray rocking curves from these structures. We determined both the thickness and the composition of the AlxGa1−xAs layers and the thickness of the GaAs layers by comparing the rocking curves to simulated ones using a dynamical x-ray diffraction model. A sensitivity analysis showed that the thickness predicted for the GaAs buried layer was precise to within 90 Å for a ≃ 2000 Å GaAs layer and that the barrier layer Al content and thickness could be determined to within 1% and 80 Å, respectively for ≃ 5000Å layers. This analysis also showed that, within experimental resolution limits, the structure determined from comparing simulated and experimental rocking curves was unique. Both the limits of this technique in determining interfacial grading and applications to specific device structures and other materials systems are discussed.

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