scholarly journals Low flux and low energy helium ion implantation into tungsten using a dedicated plasma source

2016 ◽  
Vol 383 ◽  
pp. 38-46 ◽  
Author(s):  
Lucile Pentecoste ◽  
Anne-Lise Thomann ◽  
Amer Melhem ◽  
Amael Caillard ◽  
Stéphane Cuynet ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Plasma Source ◽  
Low Energy ◽  
Helium Ion

Plasma Ion Implantation for Flat Panel Displays

1996 ◽  
Vol 438 ◽  
Author(s):  
Chung Chan ◽  
Shu Qin ◽  
Yuanzhong Zhou ◽  
Wei Liu ◽  
Shuichi Wu ◽  
...  
Keyword(s):  
Neural Network ◽  
Ion Implantation ◽  
High Throughput ◽  
Plasma Source ◽  
Low Energy ◽  
Flat Panel Displays ◽  
Flat Panel ◽  
Ion Doping

AbstractDevelopment of ion doping and hydrogenation equipment using plasma ion implantation (PII) is being studied. It is shown that low energy, high throughput operation could eliminate problems associated with etching, charging, cooling, and contamination. The applications of a new plasma source and neural network implementation optimization are also reported.

Plasma Source Ion Implantation for Ultrashallow Junctions: Low Energy and High Dose Rate

2001 ◽  
Vol 40 (Part 1, No. 4A) ◽  
pp. 2506-2507
Author(s):  
Jeonghee Cho ◽  
Seunghee Han ◽  
Yeonhee Lee ◽  
Ok Kyung Kim ◽  
Gon-Ho Kim ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Dose Rate ◽  
Plasma Source ◽  
High Dose Rate ◽  
Low Energy ◽  
High Dose ◽  
Ultrashallow Junctions ◽  
Plasma Source Ion Implantation

scholarly journals Low‐energy separation by implantation of oxygen structures via plasma source ion implantation

1994 ◽  
Vol 65 (8) ◽  
pp. 962-964 ◽  
Author(s):  
L. Zhang ◽  
J. L. Shohet ◽  
D. Dallmann ◽  
J. H. Booske ◽  
R. R. Speth ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Plasma Source ◽  
Low Energy ◽  
Energy Separation ◽  
Plasma Source Ion Implantation

Thermal Annealing Influence on Ions Implanted Fe-Cr Model Alloys

2012 ◽  
Vol 733 ◽  
pp. 274-277
Author(s):  
Stanislav Sojak ◽  
Vladimir Slugeň ◽  
V. Kršjak ◽  
W. Egger ◽  
L. Ravelli ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Defect Size ◽  
Low Energy ◽  
Defect Identification ◽  
Helium Ion ◽  
Apparent Decrease

Abstract. Binary Fe-11.62wt%Cr alloys were investigated in as-received state as well as after a two step helium ion implantation at different energies (100 keV and 250 keV) with doses up to 3.12×1018 cm-2. In order to study changes in alloys in dependence on the temperature, thermal annealing was performed at temperatures of 400, 475, 525 and 600 °C and specimens were afterwards measured by a pulsed low energy positron system (PLEPS). Annealing out of defects at lower temperatures was not as significant as expected, and we also encountered difficulties with defect identification. However, an apparent decrease of defect size was observed in the specimen annealed at a temperature of 600 °C.

Recent results in plasma source ion implantation

1992 ◽  
Author(s):  
JOHN CONRAD ◽  
M. ABUZRIBA ◽  
J. BLANCHARD ◽  
D. CHAPEK ◽  
A. CHEN ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Plasma Source ◽  
Plasma Source Ion Implantation
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