Plasma ion implantation hydrogenation of poly-Si CMOS thin-film transistors at low energy and high dose rate using an inductively-coupled plasma source

1998 ◽  
Vol 45 (6) ◽  
pp. 1324-1328 ◽  
Author(s):  
Shu Qin ◽  
Yuanzhong Zhou ◽  
T. Nakatsugawa ◽  
I.F. Husein ◽  
Chung Chan ◽  
...  
Keyword(s):  
Thin Film ◽  
Ion Implantation ◽  
Dose Rate ◽  
Thin Film Transistors ◽  
Inductively Coupled Plasma ◽  
Plasma Source ◽  
High Dose Rate ◽  
Low Energy ◽  
High Dose ◽  
Inductively Coupled

Short-Time Hydrogen Passivation of Poly-Si CMOS Thin film Transistors by High Dose Rate Plasma Ion Implantation

1995 ◽  
Vol 396 ◽  
Author(s):  
Shu Qin ◽  
James D. Bernstein ◽  
Yuanzhong Zhou ◽  
Wei Liu ◽  
Chung Chan ◽  
...  
Keyword(s):  
Thin Film ◽  
Ion Implantation ◽  
Dose Rate ◽  
Thin Film Transistors ◽  
Pulse Generator ◽  
Plasma Source ◽  
High Dose Rate ◽  
High Dose ◽  
Short Time ◽  
Good Agreement

AbstractPlasma ion implantation (PII) hydrogenation has been developed for defect passivation in polycrystalline silicon (poly-Si) thin film transistors (TFTs). A high dose rate PII process using a microwave multipolar bucket (MMB) plasma source and a 12.5 kHz pulse generator achieves saturation of device parameter improvement in 5 minutes, which is much shorter than other hydrogenation methods investigated thus far. These results have been achieved in one sixth the implant time of our previous PII experiments and are in good agreement with our process simulation.

Plasma Source Ion Implantation for Ultrashallow Junctions: Low Energy and High Dose Rate

2001 ◽  
Vol 40 (Part 1, No. 4A) ◽  
pp. 2506-2507
Author(s):  
Jeonghee Cho ◽  
Seunghee Han ◽  
Yeonhee Lee ◽  
Ok Kyung Kim ◽  
Gon-Ho Kim ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Dose Rate ◽  
Plasma Source ◽  
High Dose Rate ◽  
Low Energy ◽  
High Dose ◽  
Ultrashallow Junctions ◽  
Plasma Source Ion Implantation

The measurement of nitrogen ion species ratio in inductively coupled plasma source ion implantation

2001 ◽  
Vol 136 (1-3) ◽  
pp. 106-110 ◽  
Author(s):  
Jeonghee Cho ◽  
Seunghee Han ◽  
Yeonhee Lee ◽  
Ok Kyung Kim ◽  
Gon-Ho Kim ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Inductively Coupled Plasma ◽  
Plasma Source ◽  
Inductively Coupled ◽  
Plasma Source Ion Implantation ◽  
Nitrogen Ion ◽  
Ion Species

Etching and Charging Effects on Dose in Plasma Immersion Ion Implantation

1994 ◽  
Vol 354 ◽  
Author(s):  
Jiqun Shao ◽  
Eaton Corporation ◽  
Shu Qin ◽  
Zhuofan Zhao ◽  
Chung Chan
Keyword(s):  
Ion Implantation ◽  
Dose Rate ◽  
Lower Energy ◽  
Processing Time ◽  
General Relation ◽  
High Dose Rate ◽  
High Dose ◽  
Dose Estimation ◽  
Effective Current ◽  
Plasma Immersion Ion Implantation

AbstractA general relation between the implanted dose and the processing time for plasma immersion ion implantation (PHI) can be established through the dynamic sheath model. In practice, etching and charging effects have to be taken into account in PIII dose estimation.Plasma immersion ion implantation (PII) has been tested in fabrication of semiconductor devices with shallow junctions and in hydrogénation of poly-Si thin film transistors (TFT). PIII doping is more suitable than conventional implantation for such applications because of its high dose rate at lower energy. Since the dose rate in PIII does not depend on the area being treated, the effective current will be higher if a larger implanted area is involved. However, the relation between dose and time is not always straightforward. During PIII processing possible etching and charging will affect the total accumulated doses. This paper presents a model for each which allows a proper compensation to be performed.

Investigations of Plasma Immersion Ion Implantation Hydrogenation for Poly-Si Tfts Using an Inductively Coupled Plasma Source

1996 ◽  
Vol 438 ◽  
Author(s):  
Yuanzhong Zhou ◽  
Shu Qin ◽  
Chung Chan
Keyword(s):  
Ion Implantation ◽  
Inductively Coupled Plasma ◽  
Stress Test ◽  
Plasma Source ◽  
Trap States ◽  
Inductively Coupled ◽  
Current Voltage ◽  
Plasma Immersion Ion Implantation ◽  
Short Time

AbstractA plasma immersion ion implantation (PIII) hydrogenation process using an inductively-coupled plasma (ICP) source is implemented for defect passivation in polycrystalline silicon (poly-Si) thin film transistors (TFT's). Device parameter improvement saturates in 4 minutes, which is considerably shorter than for other reported hydrogenation methods. Stress test indicates that the devices hydrogenated by this novel technique have much better long-term reliability. The hydrogenation effects on two types of trap states are analyzed the current-voltage characteristics of the devices. The densities of deep states and tail states are significantly reduced after short time hydrogenation.

High dose rate hydrogen plasma ion implantation

1996 ◽  
Vol 85 (1-2) ◽  
pp. 56-59 ◽  
Author(s):  
S. Qin ◽  
J.D. Bernstein ◽  
C. Chan ◽  
J. Shao ◽  
S. Denholm
Keyword(s):  
Ion Implantation ◽  
Dose Rate ◽  
Hydrogen Plasma ◽  
High Dose Rate ◽  
High Dose

Reflectance of silicon surfaces after high dose rate molecular ion implantation

1981 ◽  
Vol 182-183 ◽  
pp. 595-600 ◽  
Author(s):  
M.O. Lampert ◽  
M. Hage-Ali ◽  
J.C. Muller ◽  
M. Toulemonde ◽  
P. Siffert
Keyword(s):  
Ion Implantation ◽  
Dose Rate ◽  
High Dose Rate ◽  
Silicon Surfaces ◽  
High Dose ◽  
Molecular Ion
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