The influence of stopping power and temperature on latent track formation in YAP and YAG

2019 ◽  
Vol 460 ◽  
pp. 67-73 ◽  
Author(s):  
A. Janse van Vuuren ◽  
M.M. Saifulin ◽  
V.A. Skuratov ◽  
J.H. O'Connell ◽  
G. Aralbayeva ◽  
...  
Keyword(s):  
Stopping Power ◽  
Latent Track ◽  
Track Formation

scholarly journals Molecular dynamics simulation of latent track formation in bilayer graphene

2015 ◽  
Vol 12 (22) ◽  
pp. 20150771-20150771 ◽  
Author(s):  
Dongdong Zhao ◽  
Hongxia Liu ◽  
Shulong Wang ◽  
Qianqiong Wang ◽  
Chenxi Fei ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulation ◽  
Bilayer Graphene ◽  
Dynamics Simulation ◽  
Latent Track ◽  
Track Formation

Molecular dynamics simulation of latent track formation in α-quartz

2013 ◽  
Vol 37 (3) ◽  
pp. 038201 ◽  
Author(s):  
Chun-E Lan ◽  
Jian-Ming Xue ◽  
Yu-Gang Wang ◽  
Yan-Wen Zhang
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulation ◽  
Dynamics Simulation ◽  
Latent Track ◽  
Track Formation

A simple model for latent track formation due to cluster ion stopping and fragmentation in solids

2003 ◽  
Vol 36 (1-6) ◽  
pp. 145-149 ◽  
Author(s):  
S.A. Cruz ◽  
E.G. Gamaly ◽  
L.T. Chadderton ◽  
D. Fink
Keyword(s):  
Simple Model ◽  
Latent Track ◽  
Track Formation ◽  
Cluster Ion

Microstructure of Swift Heavy Ion Irradiated SiC, Si3N4 and AlN

2000 ◽  
Vol 650 ◽  
Author(s):  
S.J. Zinkle ◽  
J.W. Jones ◽  
V.A. Skuratov
Keyword(s):  
Room Temperature ◽  
Single Crystal Silicon ◽  
Heavy Ion ◽  
Stopping Power ◽  
Crystal Silicon ◽  
Swift Heavy Ion ◽  
Transmission Electron ◽  
Track Formation ◽  
Temperature Irradiation ◽  
Electronic Stopping Power

ABSTRACTCross-section transmission electron microscopy was used to investigate the microstructure of single crystal silicon carbide and polycrystalline silicon nitride and aluminum nitride following room temperature irradiation with either 245 MeV Kr or 710 MeV Bi ions. The fluences ranged from 1×1012/cm2 (single track regime) to 1×1013/cm2. Ion track formation was observed in the Bi ion-irradiated Si3N4 specimen in regions where the electronic stopping power exceeded a critical value of ∼15 keV/nm (depths <24 μm). Ion track formation was not observed at any depth in 245 MeV Kr ion-irradiated Si3N4, in which the maximum electronic stopping power was 14.5 keV/nm. There was no evidence for track formation in either SiC or AlN irradiated with 710 MeV Bi ions, which indicates that the threshold electronic stopping power for track formation in these two ceramics is >34 keV/nm. The high resistance of SiC and AlN to track formation may be due to their high thermal conductivity, but further study is needed to quantitatively evaluate the suitability of the various track formation models.

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