AbstractMulti quantum wells of InGaAs/InP grown by metal organic chemical vapor deposition have been irradiated using swift heavy ions. Irradiation has been performed using 150MeV Ag and 200MeV Au ions. Both as-grown and irradiated samples were subjected to rapid thermal annealing at 500 and 7000C for 60s. As-grown, irradiated and annealed samples were subjected to high resolution x-ray diffraction studies. Both symmetric and asymmetric scans were analyzed. The as-grown and Ag ion irradiated samples show sharp and highly ordered satellite peaks whereas, the Au ion irradiated samples show broad and low intense peaks. The higher order satellite peaks of the annealed samples vanished with increase of annealing temperature from 500 to 7000C, indicating mixing induced interfacial disorder. Annealing of irradiated samples show higher mixing and disorder and no higher order satellite peaks were observed. Negligible strain was observed after high temperature annealing of as grown samples. Strain values calculated from the X-ray studies indicate that the irradiated samples have higher strain which has been reduced upon annealing. This indicates that the annealing induced mixing occurs maintaining the lattice parameter close to that of the substrate. The effect of electronic energy loss for interface mixing has been discussed in detail. The role of incident ion fluence in combination with the electronic energy loss will also be discussed in detail. The results have been compared with the literature and discussed in detail.
Constraining higher-order parameters for primordial non-Gaussianities from power spectra and bispectra of imaging surveys
