Study of Pd/Au metallisation and surface characteristics on Mg-doped GaN induced by low power inductively coupled plasma etching

2010 ◽  
Vol 32 (6) ◽  
pp. 700-702 ◽  
Author(s):  
A. Baharin ◽  
M. Kocan ◽  
U.K. Mishra ◽  
G. Parish ◽  
B.D. Nener
2002 ◽  
Vol 722 ◽  
Author(s):  
A. Ramam ◽  
S. Tripathy ◽  
S.J. Chua

AbstractWe have investigated optical properties of dry etched GaN using photoluminescence (PL) and micro-Raman scattering. The stoichiometry of the dry etched surface has been analyzed by x-ray photoelectron spectroscopy (XPS). Atomic force microscopy (AFM) technique has been employed to investigate the microstructures resulting from dry processing. The damage introduced by inductively coupled plasma etching has been assessed and improvement of the luminescence properties is observed during post etch annealing. The observed changes in the Raman spectra of plasma etched Si- and Mg- doped GaN can be associated with electronic and vibronic scattering mechanisms of defects.


2012 ◽  
Author(s):  
Jean Nguyen ◽  
John Gill ◽  
Sir B. Rafol ◽  
Alexander Soibel ◽  
Arezou Khoshakhlagh ◽  
...  

2005 ◽  
Vol 34 (6) ◽  
pp. 740-745 ◽  
Author(s):  
E. Laffosse ◽  
J. Baylet ◽  
J. P. Chamonal ◽  
G. Destefanis ◽  
G. Cartry ◽  
...  

2009 ◽  
Vol 517 (14) ◽  
pp. 3859-3861 ◽  
Author(s):  
Byung-Jae Kim ◽  
Hyunjung Jung ◽  
Hong-Yeol Kim ◽  
Joona Bang ◽  
Jihyun Kim

2015 ◽  
Vol 32 (5) ◽  
pp. 058102 ◽  
Author(s):  
Ying Cheng ◽  
Ji-Jun Zou ◽  
Ming Wan ◽  
Wei-Lu Wang ◽  
Xin-Cun Peng ◽  
...  

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