Interplay of Defects, Microstructures, and Surface Stoichiometry during Plasma Processing of GaN

2002 ◽  
Vol 722 ◽  
Author(s):  
A. Ramam ◽  
S. Tripathy ◽  
S.J. Chua
Keyword(s):  
Plasma Etching ◽  
Photoelectron Spectroscopy ◽  
Inductively Coupled Plasma ◽  
X Ray ◽  
Force Microscopy ◽  
Inductively Coupled Plasma Etching ◽  
Inductively Coupled ◽  
Atomic Force ◽  
Etched Surface ◽  
Mg Doped

AbstractWe have investigated optical properties of dry etched GaN using photoluminescence (PL) and micro-Raman scattering. The stoichiometry of the dry etched surface has been analyzed by x-ray photoelectron spectroscopy (XPS). Atomic force microscopy (AFM) technique has been employed to investigate the microstructures resulting from dry processing. The damage introduced by inductively coupled plasma etching has been assessed and improvement of the luminescence properties is observed during post etch annealing. The observed changes in the Raman spectra of plasma etched Si- and Mg- doped GaN can be associated with electronic and vibronic scattering mechanisms of defects.

Estimation of Inductively Coupled Plasma Etching Damage of Boron-Doped Diamond Using X-Ray Photoelectron Spectroscopy

2017 ◽  
Vol 214 (11) ◽  
pp. 1700233 ◽  
Author(s):  
Yukako Kato ◽  
Hiroyuki Kawashima ◽  
Toshiharu Makino ◽  
Masahiko Ogura ◽  
Aboulaye Traoré ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Photoelectron Spectroscopy ◽  
Inductively Coupled Plasma ◽  
Boron Doped Diamond ◽  
X Ray ◽  
Inductively Coupled Plasma Etching ◽  
Inductively Coupled ◽  
Boron Doped

scholarly journals Partitioning and Surficial Segregation of Trace Elements in Iron Oxides in Hydrothermal Fluid Systems

Minerals ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 57
Author(s):  
Nikolay Smagunov ◽  
Vladimir Tauson ◽  
Sergey Lipko ◽  
Dmitriy Babkin ◽  
Taisa Pastushkova ◽  
...  
Keyword(s):  
Trace Elements ◽  
Inductively Coupled Plasma ◽  
Absorption Spectrometry ◽  
X Ray ◽  
Force Microscopy ◽  
Inductively Coupled ◽  
Atomic Force ◽  
Fluid Systems ◽  
Nonautonomous Phase ◽  
Plasma Mass Spectrometry

Partitioning experiments were done by hydrothermal synthesis of crystals containing trace elements (TEs) by internal sampling of fluid at the temperature of 450 °C and pressure of 1 kbar. The crystal phases obtained were magnetite, hematite, and Ni-spinel, which were studied using X-ray diffraction (XRD), X-ray electron probe microanalysis (EPMA), laser ablation inductively coupled plasma mass spectrometry (LA-ICP-MS), atomic absorption spectrometry (AAS), and atomic force microscopy (AFM). The solutions from the sampler’s fluid probes were analysed by AAS for TEs included elements of the iron group plus aluminium. The highest co-crystallisation coefficients of TE and Fe between mineral and fluid (DTE/Fe) in magnetite were measured for V, Al, Ni and Cr (in decreasing order of n units in value), a lower value was observed for Co (2 × 10−1), and still lower values for Ti, Zn, and Mn (n × 10−2–10−3). In hematite, DTE/Fe values were highest for Al and V (order of n units in value), while lower values characterised Ti, Cr, and Co (n × 10−1–10−3), and the lowest values were exhibited by Cu, Mn, and Zn (n × 10−5). Copper was confirmed to be the most incompatible with all minerals studied; however, Cu had a high content on crystal surfaces. This surficial segregation contributes to the average TE concentration even when a thin layer of nonautonomous phase (NAP) is enriched in the element of interest. The accumulation of TEs on the surface of crystals increased bulk content 1–2 orders of magnitude above the content of structurally-bound elements even in coarse crystals. The inverse problem—evaluation of TE/Fe ratios in fluids involved in the formation of magnetite-containing deposits—revealed that the most abundant metals in fluids were Fe followed by Mn, Zn, and Cu, which comprised 10 to 30% of the total iron content.

scholarly journals Analysis of Perovskite Oxides Etching Using Argon Inductively Coupled Plasmas for Photonics Applications

2020 ◽  
Author(s):  
Guanyu Chen ◽  
Eric Jun Hao Cheung ◽  
Yu Cao ◽  
Jisheng Pan ◽  
Aaron J. Danner
Keyword(s):  
Photoelectron Spectroscopy ◽  
Perovskite Oxides ◽  
Inductively Coupled Plasmas ◽  
Barium Titanium Oxide ◽  
X Ray ◽  
Force Microscopy ◽  
Inductively Coupled ◽  
Icp Etching ◽  
Atomic Force ◽  
Coupled Plasmas

Abstract We analyzed the dry etching of perovskite oxides using argon-based inductively coupled plasmas (ICP) for photonics applications. Various chamber conditions and their effects on etching rates have been demonstrated based on Z-cut lithium niobate (LN). The measured results are predictable and repeatable and can be applied to other perovskite oxides, such as X-cut LN and barium titanium oxide (BTO). The surface roughness is better for both etched LN and BTO compared with their as-deposited counterparts as confirmed by atomic force microscopy (AFM). Both the energy dispersive X-ray spectroscopy (EDS) and X-ray photoelectron spectroscopy (XPS) methods have been used for surface chemical component comparisons, qualitative and quantitative, and no obvious surface state changes are observed according to the measured results. An optical waveguide fabricated with the optimized argon-based ICP etching was measured to have -3.7 dB/cm loss near 1550 nm wavelength for Z-cut LN, which validates this kind of method for perovskite oxides etching in photonics applications.

scholarly journals Analysis of perovskite oxides etching using argon inductively coupled plasmas for photonics applications

2021 ◽  
Author(s):  
Guanyu Chen ◽  
Eric Jun Hao Cheung ◽  
Yu Cao ◽  
Jisheng Pan ◽  
Aaron J. Danner
Keyword(s):  
Photoelectron Spectroscopy ◽  
Perovskite Oxides ◽  
Inductively Coupled Plasmas ◽  
Barium Titanium Oxide ◽  
X Ray ◽  
Force Microscopy ◽  
Inductively Coupled ◽  
Icp Etching ◽  
Atomic Force ◽  
Coupled Plasmas

Abstract We analyzed the dry etching of perovskite oxides using argon-based inductively coupled plasmas (ICP) for photonics applications. Various chamber conditions and their effects on etching rates have been demonstrated based on Z-cut lithium niobate (LN). The measured results are predictable and repeatable and can be applied to other perovskite oxides, such as X-cut LN and barium titanium oxide (BTO). The surface roughness is better for both etched LN and BTO compared with their as-deposited counterparts as confirmed by atomic force microscopy (AFM). Both the energy dispersive X-ray spectroscopy (EDS) and X-ray photoelectron spectroscopy (XPS) methods have been used for surface chemical component comparisons, qualitative and quantitative, and no obvious surface state changes are observed according to the measured results. An optical waveguide fabricated with the optimized argon-based ICP etching was measured to have − 3.7 dB/cm loss near 1550 nm wavelength for Z-cut LN, which validates this kind of method for perovskite oxides etching in photonics applications.

Investigation of the Effect of Uv-Assisted Oxidation and Nitridation of Hafnium Metal Films

2003 ◽  
Vol 780 ◽  
Author(s):  
C. Essary ◽  
V. Craciun ◽  
J. M. Howard ◽  
R. K. Singh
Keyword(s):  
Uv Radiation ◽  
Photoelectron Spectroscopy ◽  
Grazing Angle ◽  
X Ray Diffraction ◽  
Metal Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Silicon Interface

AbstractHf metal thin films were deposited on Si substrates using a pulsed laser deposition technique in vacuum and in ammonia ambients. The films were then oxidized at 400 °C in 300 Torr of O2. Half the samples were oxidized in the presence of ultraviolet (UV) radiation from a Hg lamp array. X-ray photoelectron spectroscopy, atomic force microscopy, and grazing angle X-ray diffraction were used to compare the crystallinity, roughness, and composition of the films. It has been found that UV radiation causes roughening of the films and also promotes crystallization at lower temperatures.Furthermore, increased silicon oxidation at the interface was noted with the UVirradiated samples and was shown to be in the form of a mixed layer using angle-resolved X-ray photoelectron spectroscopy. Incorporation of nitrogen into the film reduces the oxidation of the silicon interface.

Inductively coupled plasma etching for delineation of InAs/GaSb pixels

2012 ◽  
Author(s):  
Jean Nguyen ◽  
John Gill ◽  
Sir B. Rafol ◽  
Alexander Soibel ◽  
Arezou Khoshakhlagh ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Inductively Coupled Plasma ◽  
Inductively Coupled Plasma Etching ◽  
Inductively Coupled
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