Contribution to the study of recombination at the interface spherical precipitate/p-type semiconductor in the EBIC mode

ABSTRACTMaterials design for transparent p-type conducting oxides was extended to oxysulfide system. LaCuOS was selected as a candidate for a transparent p-type semiconductor. It was found that the electrical conductivity of LaCuOS was p-type and controllable from semiconducting to semi-metallic states by substituting Sr2+ for La3+. LaCuOS films showed high transparency in the visible region, and the bandgap estimated was approximately 3.1 eV. Moreover, it was revealed that LaCuOS showed sharp excitonic absorption and emission at the bandgap edge, which is advantageous for optical applications. A layered oxysulfide, LaCuOS, was proposed to be a promising material for optoelectronic devices.

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The Study of p-n and Schottky Junction for Magnetodiode

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.378-379.663 ◽

2011 ◽

Vol 378-379 ◽

pp. 663-667 ◽

Cited By ~ 2

Author(s):

Toempong Phetchakul ◽

Wittaya Luanatikomkul ◽

Chana Leepattarapongpan ◽

E. Chaowicharat ◽

Putapon Pengpad ◽

...

Keyword(s):

Magnetic Field ◽

Electrical Properties ◽

Simulation Model ◽

Hall Effect ◽

Schottky Junction ◽

Field Sensitivity ◽

Field Response ◽

Type Semiconductor ◽

Simulation Results ◽

P Type

This paper presents the simulation model of Dual Magnetodiode and Dual Schottky Magnetodiode using Sentaurus TCAD to simulate the virtual structure of magneto device and apply Hall Effect to measure magnetic field response of the device. Firstly, we use the program to simulate the magnetodiode with p-type semiconductor and aluminum anode and measure electrical properties and magnetic field sensitivity. Simulation results show that sensitivity of Dual Schottky magnetodiode is higher than that of Dual magnetodiode.

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Study on Phases and Thermoelectric Properties of Bulk Fe4Sb12 and Fe3CoSb12 Prepared by Milling and Sintering

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.121-126.1526 ◽

2011 ◽

Vol 121-126 ◽

pp. 1526-1529

Author(s):

Ke Gao Liu ◽

Jing Li

Keyword(s):

Thermoelectric Properties ◽

Impurity Phase ◽

Semiconductor Materials ◽

Thermal Constant ◽

X Ray Diffraction ◽

X Ray ◽

Seebeck Coefficients ◽

Maximum Value ◽

Type Semiconductor ◽

P Type

Bulk Fe4Sb12 and Fe3CoSb12 were prepared by sintering at 600 °C. The phases of samples were analyzed by X-ray diffraction and their thermoelectric properties were tested by electric constant instrument and laser thermal constant instrument. Experimental results show that, the major phases of bulk samples are skutterudite with impurity phase FeSb2. The electric resistivities of the samples increase with temperature rising at 100~500 °C. The bulk samples are P-type semiconductor materials. The Seebeck coefficients of the bulk Fe4Sb12 are higher than those of bulk Fe3CoSb12 samples at 100~200 °C but lower at 300~500 °C. The power factor of the bulk Fe4Sb12 samples decreases with temperature rising while that of bulk Fe3CoSb12 samples increases with temperature rising at 100~500 °C. The thermal conductivities of the bulk Fe4Sb12 samples are relatively higher than those of and Fe3CoSb12, which maximum value is up to 0.0974 Wm-1K-1. The ZT value of bulk Fe3CoSb12 increases with temperature rising at 100~500 °C, the maximum value is up to 0.031.The ZT values of the bulk Fe4Sb12 samples are higher than those of bulk Fe3CoSb12 at 100~300 °C while lower at 400~500 °C.

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A NOx Sensor Based on Solid-Electrolyte Impedance Transducer

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.47-50.479 ◽

2008 ◽

Vol 47-50 ◽

pp. 479-482 ◽

Cited By ~ 5

Author(s):

Youichi Shimizu ◽

Satoko Takase ◽

Daisuke Koba

Keyword(s):

Solid Electrolyte ◽

Selective Detection ◽

Ceramic Oxides ◽

Sensing Mechanism ◽

Sensor Device ◽

Nox Sensor ◽

Type Semiconductor ◽

Ionic Solid ◽

P Type ◽

Perovskite Type

A new solid-electrolyte impedance-metric NOx sensor device composed of a lithium ionic solid electrolyte: Li1.5Al0.5Ti1.5(PO4)3 (LATP) as a transducer and ceramic oxides (perovskite-type oxides, TiO2, SnO2, etc) as a receptor, respectively, have been systematically investigated for the detection of NOx (NO and NO2 ) in the range 10 – 200 ppm at 400 - 500°C. Responses of the sensors were able to divide component between resistance and capacitance, and it was found that the device was applicable to the selective detection of NO or NO2 concentration in each ingredient. Especially, those using TiO2, SnO2 (n-type semiconductor) and perovskite-type oxides (LaCoO3, LaNiO3 and LaCrO3) based receptors gave good responses to NO and NO2. It was also found that the responses were different between n-type or p-type semiconductors, in which we tried to elucidate the sensing mechanism

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A Novel Sr2CuInO3S p-type semiconductor photocatalyst for hydrogen production under visible light irradiation

Journal of Energy Chemistry ◽

10.1016/s2095-4956(14)60167-4 ◽

2014 ◽

Vol 23 (4) ◽

pp. 420-426 ◽

Cited By ~ 16

Author(s):

Yushuai Jia ◽

Jingxiu Yang ◽

Dan Zhao ◽

Hongxian Han ◽

Can Li

Keyword(s):

Hydrogen Production ◽

Visible Light ◽

Visible Light Irradiation ◽

Light Irradiation ◽

Type Semiconductor ◽

P Type ◽

Semiconductor Photocatalyst

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Nickle Oxide Regulating Surface Oxygen to Promote Formaldehyde Oxidation on Manganese Oxide Catalyst

Catalysis Science & Technology ◽

10.1039/d1cy01490k ◽

2021 ◽

Author(s):

Hailin Zhao ◽

Jie Tang ◽

Zengyuan Li ◽

Jie Yang ◽

Hao Liu ◽

...

Keyword(s):

Manganese Oxide ◽

High Activity ◽

Catalytic Oxidation ◽

Oxide Catalyst ◽

Low Cost ◽

Surface Oxygen ◽

Formaldehyde Oxidation ◽

Type Semiconductor ◽

Manganese Oxide Catalyst ◽

P Type

Catalytic oxidation is the most effective method to eliminate the in-door formaldehyde, the Mn-based catalyst with low cost and high activity has drawn great attention. Herein, p-type semiconductor NiO doped...

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