The Study of p-n and Schottky Junction for Magnetodiode

2011 ◽  
Vol 378-379 ◽  
pp. 663-667 ◽  
Author(s):  
Toempong Phetchakul ◽  
Wittaya Luanatikomkul ◽  
Chana Leepattarapongpan ◽  
E. Chaowicharat ◽  
Putapon Pengpad ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Electrical Properties ◽  
Simulation Model ◽  
Hall Effect ◽  
Schottky Junction ◽  
Field Sensitivity ◽  
Field Response ◽  
Type Semiconductor ◽  
Simulation Results ◽  
P Type

This paper presents the simulation model of Dual Magnetodiode and Dual Schottky Magnetodiode using Sentaurus TCAD to simulate the virtual structure of magneto device and apply Hall Effect to measure magnetic field response of the device. Firstly, we use the program to simulate the magnetodiode with p-type semiconductor and aluminum anode and measure electrical properties and magnetic field sensitivity. Simulation results show that sensitivity of Dual Schottky magnetodiode is higher than that of Dual magnetodiode.

scholarly journals An Analytical Theory of Piezoresistive Effects in Hall Plates with Large Contacts

2018 ◽  
Vol 2018 ◽  
pp. 1-24 ◽  
Author(s):  
Udo Ausserlechner
Keyword(s):  
Magnetic Field ◽  
Hall Effect ◽  
Mechanical Stress ◽  
Stress Sensitivity ◽  
Geometry Factor ◽  
Offset Voltage ◽  
Field Sensitivity ◽  
Limited Class ◽  
Analytical Formulae ◽  
Stress And Deformation

Four-terminal transducers can be used to measure the magnetic field via the Hall effect or the mechanical stress via the piezoresistance effect. Both effects are described by an anisotropic conductivity tensor with small offdiagonal elements. This has led other authors to the conclusion that there is some kind of analogy. In both cases the output voltage depends on the geometry of the device and the size of the contacts. For Hall plates this influence is accounted for by the Hall-geometry factor. The alleged analogy proposes that the Hall-geometry factor also applies to four-terminal stress transducers. This paper shows that the analogy holds only for a limited class of devices. Moreover, it is shown that devices of different geometries may have identical magnetic field sensitivity but different mechanical stress sensitivities. Thus, shape optimization makes sense for mechanical stress sensors. In extreme cases the output voltages of vertical Hall-effect devices may have notable magnetic field sensitivity but zero mechanical stress sensitivity. As byproduct, exact analytical formulae for the equivalent resistor circuit of rectangular and circular devices with two perpendicular mirror symmetries are given. They allow for an accurate description of how mechanical stress and deformation affect the output offset voltage and the magnetic sensitivity of Hall-effect devices.

scholarly journals Влияние электронного и дырочного допирования на транспортные характеристики халькогенидных систем

2021 ◽  
Vol 63 (5) ◽  
pp. 606
Author(s):  
О.Б. Романова ◽  
C.C. Аплеснин ◽  
Л.В. Удод
Keyword(s):  
Magnetic Field ◽  
Electrical Properties ◽  
Hall Effect ◽  
Charge Carriers ◽  
Hall Constant ◽  
Temperature Range ◽  
Current Voltage ◽  
Semiconductor Compounds ◽  
Current Voltage Characteristics ◽  
Ohmic Conductivity

The electrical properties and the Hall effect in semiconductor compounds Ag0.01Mn0.99S and Tm0.01Mn0.99S have been studied in the temperature range 80–400 K in a magnetic field of 12 kOe. The mechanism of conduction is established, which depends on the type of doping and concentration from the current - voltage characteristics. At the replacement of manganese by silver, the Mott type was found, and the replacement by thulium causes ohmic conductivity. The mobility and type of charge carriers are found from the Hall constant.

Resistivity and high magnetic field hall effect measurements on as-grown p-type HgZnTe

1990 ◽  
Vol 101 (1-4) ◽  
pp. 872-875 ◽  
Author(s):  
P. Fajardo ◽  
J. Sanz-Maudes ◽  
T. Rodriguez ◽  
M.A. González ◽  
R. Triboulet
Keyword(s):  
Magnetic Field ◽  
Hall Effect ◽  
High Magnetic Field ◽  
Hall Effect Measurements ◽  
P Type

Hall-effect and resistivity measurements in copper–indium–gallium–selenium–tellurium solid solutions

1985 ◽  
Vol 63 (6) ◽  
pp. 778-780
Author(s):  
J. J. Ilowski ◽  
A. A. Berezin
Keyword(s):  
Electrical Properties ◽  
Hall Effect ◽  
Solid Solutions ◽  
Semiconductor Alloys ◽  
Resistivity Measurements ◽  
Copper Indium ◽  
Indium Gallium ◽  
P Type ◽  
Constituent Elements ◽  
Copper Indium Gallium

Hall-effect and resistivity measurements of semiconductor alloys of the type Culn1−yGaySe2(1−x)Te2x have been made over the temperature range 77–300 K. All materials were p-type with mobilities in the range 1 < μ < 10 cm2/V∙s. The observed electrical properties are interpreted in terms of the presence of intrinsic defects arising from dissimilar evaporation of the constituent elements of the materials during melting and annealing stages.

The Network of Photoelectromagnetics Methods For Determination of Recombination and Diffusion Parameters of Charge Carriers in Epitaxial Films Mercury-Cadmium-Telluride p-Type

2011 ◽  
Vol 6 (1) ◽  
pp. 104-115
Author(s):  
Vladimir Ya. Kostyuchenko ◽  
Dmitriy Yu. Protasov
Keyword(s):  
Magnetic Field ◽  
Hall Effect ◽  
Cadmium Telluride ◽  
Mercury Cadmium Telluride ◽  
Epitaxial Films ◽  
Charge Carriers ◽  
Diffusion Parameters ◽  
P Type ◽  
And Diffusion

In this paper the network of photoelectromagnetic methods of definition recombination and diffusion parameters developed for p-type epitaxial mercury-cadmium-tellurium films at temperature 77÷125 K is offered. The network includes the methods based on measurement of photoconductivity in a magnetic field for Voight and Faradey geometry, photomagnetic effect, Hall effect and magnitoresistance

Optical and Electrical Properties of P-Type N-Doped ZnO Film

2014 ◽  
Vol 609-610 ◽  
pp. 113-117
Author(s):  
Ya Juan Sun ◽  
Wan Xing Wang
Keyword(s):  
Electrical Properties ◽  
Hall Effect ◽  
Band Gap ◽  
Hall Effect Measurement ◽  
Effect Measurement ◽  
Zno Films ◽  
Optical And Electrical Properties ◽  
High Quality ◽  
Doped Zno ◽  
P Type

Since ZnO is a wide band gap (3.37 eV) semiconductor with a large exitonic binding energy (60 meV), it has been considered as a candidate for various applications, such as ultraviolet (UV) light emitting diodes and laser diodes. For the applications of ZnO-based optoelectronic devices, it is necessary to produce n and p type ZnO films with the high quality. Since ZnO is naturally n-type semiconductor material due to intrinsic defects, such as oxygen vacancies, zinc interstitials, etc., it is easy to produce n-type ZnO with high quality. However, it is difficult to produce low-resistive and stable p-type ZnO due to its asymmetric doping limitations and the self-compensation effects of the intrinsic defects. According to the theoretical studies, p-type ZnO can be realized using group-V dopants substituting for O, such as N, P and As. Among them, N has been suggested to be an effective acceptor dopant candidate to achieve p-type ZnO, because that nitrogen has a much smaller ionic size than P and As and the energy level of substitutional NOis lower than that of substitutional POand AsO.Transparent p-type ZnO: N thin films have been fabricated using the pulsed laser deposition method at deposition temperatures 800 °C under the O2and N2mixing pressure 6Pa. N-doped ZnO films were deposited on sapphire substrate using metallic zinc (99.999%) as target. The structural, optical and electrical properties of the films were examined by XRD, UV-visit spectra and Hall effect measurement. We found that thin film contain the hexagonal ZnO structure. The Hall effect measurement revealed that the carrier concentration is 5.84×10181/ cm3, and Hall mobility is 0.26 cm2/Vs, electrical resistivity is 4.12ohm-cm. Film thickness is 180nm. Besides, Visible light transmittance is more than 80%, and calculative band-gap is 3.1 eV, which is lower than ZnO.

scholarly journals Optoelectronic and Birefringence Properties of Weakly Mg Doped ZnO Thin lms Prepared By Spray Pyrolysis.

2021 ◽  
Author(s):  
Yassine Bouachibaa ◽  
ABDELOUADOUD MAMMERI ◽  
Abderrahmane Bouabellou ◽  
Rabia Oualid ◽  
Saber Saidi ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Spray Pyrolysis ◽  
Chemical Vapor ◽  
Ultra Violet ◽  
Dip Coating ◽  
Group V ◽  
Group Iii ◽  
Type Semiconductor ◽  
Direct Band ◽  
P Type

Abstract Zinc Oxide (ZnO) is is a multipurpose semiconductor with many uses such as ultra-capacitor electrode [1], spintronic devices [2], multigas sensing [3–6], piezoelectric devices [7], ultra-violet LEDs [8], detectors [9] as well as waveguides [10–12]. In its thin film form, ZnO has a large adaptation to several deposition methods such as chemical vapor deposition [13], pulsed laser deposition [14], spray pyrolysis [15], dip-coating [16] and electrochemical deposition [17]. ZnO has very interesting characteristics for application in electronics and optoelectronics devices, especially its exciton binding energy of 60 meV at 300K, a wide direct band gap of 3.37 eV [18]. In addition to an ordinary and extraordinary refractive indexes of ne = 2.006 and no = 1.990 respectively [19]. To modify its electrical properties, ZnO was doped with Group III elements such as Al, Ga and In which acted as donor dopants to reinforce its n-type electrical nature and group V elements such as N, P, As and Sb which acted as acceptor dopants which changed ZnO to be a p-type semiconductor [20]. Controlling the refractive index of ZnO thin films was achieved by several ways including thermal annealing [21] and doping with In [22], Te, N [23] and Mg [24]. However, the e↵ect of dopants on the optical and electrical properties of ZnO is still not well understood.

scholarly journals Effect of Na Doping on the Nanostructures and Electrical Properties of ZnO Nanorod Arrays

2016 ◽  
Vol 2016 ◽  
pp. 1-5 ◽  
Author(s):  
Lu Yue ◽  
Zhiqiang Zhang ◽  
Yanyan Ma ◽  
Wenhui Zhang
Keyword(s):  
Optical Properties ◽  
Electrical Properties ◽  
Hall Effect ◽  
Zno Nanorod ◽  
Nanorod Arrays ◽  
Zno Nanorod Arrays ◽  
Electrical And Optical Properties ◽  
Na Doping ◽  
Doped Zno ◽  
P Type

The p-type ZnO nanorod arrays were prepared by doping Na with hydrothermal method. The structural, electrical, and optical properties were explored by XRD, Hall-effect, PL, and Raman spectra. The carrier concentrations and the mobility of Na-doped ZnO nanorod arrays are arranged from1.4×1016 cm−3to1.7×1017 cm−3and 0.45 cm2 v−1 s−1to 106 cm2 v−1 s−1, respectively.

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