The effects of substrate temperature on the structure, morphology and photoluminescence properties of pulsed laser deposited SrAl2O4:Eu2+,Dy3+ thin films

2009 ◽  
Vol 404 (22) ◽  
pp. 4436-4439 ◽  
Author(s):  
O.M. Ntwaeaborwa ◽  
P.D. Nsimama ◽  
J.T. Abiade ◽  
E. Coetsee ◽  
H.C Swart
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Pulsed Laser ◽  
Photoluminescence Properties ◽  
Structure Morphology

Physical Properties Of Single-Phase Skutterudite Thin-Films (CoSb3 and IrSb3)

1998 ◽  
Vol 545 ◽  
Author(s):  
J. C. Caylor ◽  
A. M. Stacy ◽  
T. Sands ◽  
R. Gronsky
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Growth Parameters ◽  
X Ray Diffraction ◽  
Adhesion Properties ◽  
Rutherford Back Scattering ◽  
Phonon Component ◽  
Transmission Electron ◽  
Structure Morphology ◽  
High Vapor

AbstractBulk skutterudite phases based on the CoAs3 structure have yielded compositions with a high thermoelectric figure-of-merit (“ZT”) through the use of doping and substitutional alloying. It is postulated that further enhancements in ZT may be attained in artificially structured skutterudites by engineering the microstructure to enhance carrier mobility while suppressing the phonon component of the thermal conductivity. In this work the growth and properties of singlephase CoSb3 and IrSb3 skutterudite thin films are reported. The films are synthesized by pulsed laser deposition (PLD) where the crystallinity can be controlled by the deposition temperature. Powder X-ray diffraction (PXRD), Transmission electron microscopy (TEM) and Rutherford- Back Scattering (RBS) were used to probe phase, structure, morphology and stoichiometry of the films as functions of growth parameters and substrate type. A substrate temperature of 250°C was found to be optimal for the deposition of the skutterudites from stoichiometric targets. Above this temperature the film is depleted of antimony due to its high vapor pressure eventually reaching a composition where the skutterudite structure is no longer stable. However, when films are grown from antimony-rich targets the substrate temperature can be increased to at least 350°C while maintaining the skutterudite phase. In addition, adhesion properties of the films are explored in terms of the growth mode and substrate interaction. Finally, preliminary room temperature electrical and thermal measurements are reported.

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