Fabrication and photoluminescence of P doped ZnO nanobelts by thermal evaporation method

2011 ◽  
Vol 406 (18) ◽  
pp. 3479-3483 ◽  
Author(s):  
C.Y. Zang ◽  
C.H. Zang ◽  
B. Wang ◽  
Z.X. Jia ◽  
S.R. Yue ◽  
...  
Keyword(s):  
Thermal Evaporation ◽  
Thermal Evaporation Method ◽  
Evaporation Method ◽  
Doped Zno

scholarly journals Effect of annealing treatment on structure of Ag doped ZnO films deposited by thermal evaporation method

2017 ◽  
Vol 213 ◽  
pp. 012024 ◽  
Author(s):  
L N Wang ◽  
L Zhou ◽  
D Zhou ◽  
Y Yu ◽  
Z Q Luan ◽  
...  
Keyword(s):  
Thermal Evaporation ◽  
Annealing Treatment ◽  
Zno Films ◽  
Thermal Evaporation Method ◽  
Evaporation Method ◽  
Doped Zno

Synthesis of Cu-doped ZnO nanostructure by thermal evaporation method

2012 ◽  
Author(s):  
A. K. Srivastava ◽  
S. K. Rai ◽  
P. Mishra ◽  
A. Das ◽  
T. Ganguly ◽  
...  
Keyword(s):  
Thermal Evaporation ◽  
Thermal Evaporation Method ◽  
Evaporation Method ◽  
Zno Nanostructure ◽  
Doped Zno

Highly conducting and transparent Ga2O3 doped ZnO thin films prepared by thermal evaporation method

2012 ◽  
Vol 46 (12) ◽  
pp. 1545-1548 ◽  
Author(s):  
Sowmya Palimar ◽  
Kasturi V. Bangera ◽  
G. K. Shivakumar
Keyword(s):  
Thin Films ◽  
Thermal Evaporation ◽  
Zno Thin Films ◽  
Thermal Evaporation Method ◽  
Evaporation Method ◽  
Doped Zno

Tailoring Energy Bandgap of Al Doped ZnO Thin Films Grown by Vacuum Thermal Evaporation Method

2015 ◽  
Vol 15 (12) ◽  
pp. 9636-9642 ◽  
Author(s):  
Sumit Vyas ◽  
Shaivalini Singh ◽  
P. Chakrabarti
Keyword(s):  
Thin Films ◽  
Thermal Evaporation ◽  
Zno Thin Films ◽  
Thermal Evaporation Method ◽  
Evaporation Method ◽  
Vacuum Thermal Evaporation ◽  
Energy Bandgap ◽  
Doped Zno

Fabrication and Growth Mechanism of Zn1-xCdxO Nanotubes by Thermal Evaporation Method

2009 ◽  
Vol 24 (5) ◽  
pp. 998-1002
Author(s):  
Bo LIU ◽  
Fa-Zhan WANG ◽  
Gu-Zhong ZHANG ◽  
Chao ZHAO ◽  
Si-Cong YUAN
Keyword(s):  
Growth Mechanism ◽  
Thermal Evaporation ◽  
Thermal Evaporation Method ◽  
Evaporation Method

Hybrid ZnO/ZnS nanoforests as the electrode materials for high performance supercapacitor application

2015 ◽  
Vol 44 (5) ◽  
pp. 2409-2415 ◽  
Author(s):  
Siwen Zhang ◽  
Bosi Yin ◽  
He Jiang ◽  
Fengyu Qu ◽  
Ahmad Umar ◽  
...  
Keyword(s):  
High Performance ◽  
Electrode Materials ◽  
Thermal Evaporation ◽  
Tube Furnace ◽  
Thermal Evaporation Method ◽  
Argon Gas ◽  
Evaporation Method ◽  
Supercapacitor Application

Heterostructured ZnO/ZnS nanoforests are prepared through a simple two-step thermal evaporation method at 650 °C and 1300 °C in a tube furnace under the flow of argon gas, respectively.

scholarly journals Preparation of InSe Thin Films by Thermal Evaporation Method and Their Characterization: Structural, Optical, and Thermoelectrical Properties

2018 ◽  
Vol 2018 ◽  
pp. 1-9 ◽  
Author(s):  
Sarita Boolchandani ◽  
Subodh Srivastava ◽  
Y. K. Vijay
Keyword(s):  
Thin Films ◽  
Seebeck Coefficient ◽  
Thermoelectric Power ◽  
Temperature Variation ◽  
Thermal Evaporation ◽  
Low Cost ◽  
High Vacuum ◽  
Power Measurement ◽  
Thermal Evaporation Method ◽  
Evaporation Method

The indium selenium (InSe) bilayer thin films of various thickness ratios, InxSe(1-x) (x = 0.25, 0.50, 0.75), were deposited on a glass substrate keeping overall the same thickness of 2500 Ǻ using thermal evaporation method under high vacuum atmosphere. Electrical, optical, and structural properties of these bilayer thin films have been compared before and after thermal annealing at different temperatures. The structural and morphological characterization was done using XRD and SEM, respectively. The optical bandgap of these thin films has been calculated by Tauc’s relation that varies within the range of 1.99 to 2.05 eV. A simple low-cost thermoelectrical power measurement setup is designed which can measure the Seebeck coefficient “S” in the vacuum with temperature variation. The setup temperature variation is up to 70°C. This setup contains a Peltier device TEC1-12715 which is kept between two copper plates that act as a reference metal. Also, in the present work, the thermoelectric power of indium selenide (InSe) and aluminum selenide (AlSe) bilayer thin films prepared and annealed in the same way is calculated. The thermoelectric power has been measured by estimating the Seebeck coefficient for InSe and AlSe bilayer thin films. It was observed that the Seebeck coefficient is negative for InSe and AlSe thin films.

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