scholarly journals Preparation of InSe Thin Films by Thermal Evaporation Method and Their Characterization: Structural, Optical, and Thermoelectrical Properties

2018 ◽  
Vol 2018 ◽  
pp. 1-9 ◽  
Author(s):  
Sarita Boolchandani ◽  
Subodh Srivastava ◽  
Y. K. Vijay
Keyword(s):  
Thin Films ◽  
Seebeck Coefficient ◽  
Thermoelectric Power ◽  
Temperature Variation ◽  
Thermal Evaporation ◽  
Low Cost ◽  
High Vacuum ◽  
Power Measurement ◽  
Thermal Evaporation Method ◽  
Evaporation Method

The indium selenium (InSe) bilayer thin films of various thickness ratios, InxSe(1-x) (x = 0.25, 0.50, 0.75), were deposited on a glass substrate keeping overall the same thickness of 2500 Ǻ using thermal evaporation method under high vacuum atmosphere. Electrical, optical, and structural properties of these bilayer thin films have been compared before and after thermal annealing at different temperatures. The structural and morphological characterization was done using XRD and SEM, respectively. The optical bandgap of these thin films has been calculated by Tauc’s relation that varies within the range of 1.99 to 2.05 eV. A simple low-cost thermoelectrical power measurement setup is designed which can measure the Seebeck coefficient “S” in the vacuum with temperature variation. The setup temperature variation is up to 70°C. This setup contains a Peltier device TEC1-12715 which is kept between two copper plates that act as a reference metal. Also, in the present work, the thermoelectric power of indium selenide (InSe) and aluminum selenide (AlSe) bilayer thin films prepared and annealed in the same way is calculated. The thermoelectric power has been measured by estimating the Seebeck coefficient for InSe and AlSe bilayer thin films. It was observed that the Seebeck coefficient is negative for InSe and AlSe thin films.

scholarly journals Annealing Effect on the Thermoelectric Properties of Bi2Te3Thin Films Prepared by Thermal Evaporation Method

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Jyun-Min Lin ◽  
Ying-Chung Chen ◽  
Chi-Pi Lin
Keyword(s):  
Thin Films ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Power Factor ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Thermal Evaporation ◽  
Thermal Evaporation Method ◽  
Si Substrates ◽  
Seebeck Coefficients

Bismuth telluride-based compounds are known to be the best thermoelectric materials within room temperature region, which exhibit potential applications in cooler or power generation. In this paper, thermal evaporation processes were adopted to fabricate the n-type Bi2Te3thin films on SiO2/Si substrates. The influence of thermal annealing on the microstructures and thermoelectric properties of Bi2Te3thin films was investigated in temperature range 100–250°C. The crystalline structures and morphologies were characterized by X-ray diffraction and field emission scanning electron microscope analyses. The Seebeck coefficients, electrical conductivity, and power factor were measured at room temperature. The experimental results showed that both the Seebeck coefficient and power factor were enhanced as the annealing temperature increased. When the annealing temperature increased to 250°C for 30 min, the Seebeck coefficient and power factor of n-type Bi2Te3-based thin films were found to be about −132.02 μV/K and 6.05 μW/cm·K2, respectively.

scholarly journals Structure, Morphology and Opto-Electrical Properties of Nanostructured Indium Doped SnO2 Thin Films Deposited by Thermal Evaporation

2016 ◽  
Vol 12 (27) ◽  
pp. 263 ◽  
Author(s):  
Md. Mahafuzur Rahaman ◽  
Kazi Md. Amjad Hussain ◽  
Mehnaz Sharmin ◽  
Chitra Das ◽  
Shamima Choudhury
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Thermal Evaporation ◽  
High Vacuum ◽  
Optical Transmittance ◽  
Visible Range ◽  
Average Crystalline Size ◽  
Thermal Evaporation Method ◽  
Double Beam

Indium doped Tin oxide (SnO2: In) thin films of various thicknesses (200-600 nm) with fixed 2% indium (In) concentration were prepared by thermal evaporation method onto glass substrates under high vacuum (10-6 Torr). As deposited films were vacuum annealed at 200o C for 60 minutes. The structure, optical, electrical and morphology properties of SnO2: In thin films were investigated as a function of film thickness. The XRD analysis revealed that films were polycrystalline in nature with a tetragonal structure having (110) plane as the preferred orientation. The average crystalline size increased from 34.8 to 51.25 nm with increase of film thicknesses. The surface morphology of the doped films was obtained by Atomic Force Microscopy (AFM) and Field Emission Scanning Electron Microscope (FESEM). Optical transmittance was obtained from a double beam UV-Vis- NIR spectrophotometer. Maximum transmittance varied from 65-76% in the visible range of the spectrum. Optical band gap (Eg) varied between 2.89 and 3.20 eV. The resistivity of SnO2: In thin films was as high as 105 Ω-cm. Activation energy of the films were found to be 0.18 to 0.47 eV for 300-600 nm film thicknesses. Due to high optical band gap and high electrical resistivity, these nanostructured films can be used in optoelectronic devices especially as opto-insulator.

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