Optimized optical band gap energy and Urbach tail of Cr2S3 thin films by Sn incorporation for optoelectronic applications

2020 ◽  
Vol 593 ◽  
pp. 412292
Author(s):  
Sema Ebrahimi ◽  
Benyamin Yarmand
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Band Gap Energy ◽  
Urbach Tail ◽  
Gap Energy ◽  
Optoelectronic Applications

Stability Investigation in the Optical Properties of Thermally Evaporated Ge5Se95-x Znx Thin Films

2015 ◽  
Vol 7 (3) ◽  
pp. 1923-1930
Author(s):  
Austine Amukayia Mulama ◽  
Julius Mwakondo Mwabora ◽  
Andrew Odhiambo Oduor ◽  
Cosmas Mulwa Muiva ◽  
Boniface Muthoka ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Thermal Evaporation ◽  
Optical Transition ◽  
Bulk Material ◽  
Band Gap Energy ◽  
Optical Absorbance ◽  
Gap Energy ◽  
Constituent Elements

 Selenium-based chalcogenides are useful in telecommunication devices like infrared optics and threshold switching devices. The investigated system of Ge5Se95-xZnx (0.0 ≤ x ≤ 4 at.%) has been prepared from high purity constituent elements. Thin films from the bulk material were deposited by vacuum thermal evaporation. Optical absorbance measurements have been performed on the as-deposited thin films using transmission spectra. The allowed optical transition was found to be indirect and the corresponding band gap energy determined. The variation of optical band gap energy with the average coordination number has also been investigated based on the chemical bonding between the constituents and the rigidity behaviour of the system’s network.

scholarly journals Effect of thickness on the optical properties of Gaas thin films

2013 ◽  
Vol 37 (1) ◽  
pp. 83-91 ◽  
Author(s):  
Chitra Das ◽  
Jahanara Begum ◽  
Tahmina Begum ◽  
Shamima Choudhury
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Refractive Index ◽  
Band Gap ◽  
Optical Band Gap ◽  
Visible Region ◽  
Solar Spectrum ◽  
Band Gap Energy ◽  
Optical Parameters ◽  
Gap Energy

Effect of thickness on the optical and electrical properties of gallium arsenide (GaAs) thin films were studied. The films of different thicknesses were prepared by vacuum evaporation method (~10-4 Pa) on glass substrates at a substrate temperature of 323 K. The film thickness was measured in situ by a frequency shift of quartz crystal. The thicknesses were 250, 300 and 500 nm. Absorption spectrum of this thin film had been recorded using UV-VIS-NIR spectrophotometer in the photon wavelength range of 300 - 2500 nm. The values of some important optical parameters of the studied films (absorption coefficient, optical band gap energy and refractive index; extinction co-efficient and real and imaginary parts of dielectric constant) were determined using these spectra. Transmittance peak was observed in the visible region of the solar spectrum. Here transmittance showed better result when thicknesses were being increased. The optical band gap energy was decreased by the increase of thickness. The refractive index increased by increasing thickness while extinction co-efficient and real and imaginary part of dielectric constant decreased. DOI: http://dx.doi.org/10.3329/jbas.v37i1.15684 Journal of Bangladesh Academy of Sciences, Vol. 37, No. 1, 83-91, 2013

Effect of Nb doping on morphology, crystal structure, optical band gap energy of TiO2 thin films

2014 ◽  
Vol 14 (3) ◽  
pp. 421-427 ◽  
Author(s):  
Deuk Yong Lee ◽  
Ju-Hyun Park ◽  
Young-Hun Kim ◽  
Myung-Hyun Lee ◽  
Nam-Ihn Cho
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Band Gap Energy ◽  
Tio2 Thin Films ◽  
Gap Energy ◽  
Nb Doping

Effects of Nitrogen Doping on Optical Properties of Tungsten Oxide Thin Films

2012 ◽  
Vol 616-618 ◽  
pp. 1773-1777
Author(s):  
Xi Lian Sun ◽  
Hong Tao Cao
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Optical Properties ◽  
Band Gap ◽  
Tungsten Oxide ◽  
Nitrogen Doping ◽  
Optical Band Gap ◽  
Band Gap Energy ◽  
Gap Energy ◽  
Tungsten Oxide Thin Films

In depositing nitrogen doped tungsten oxide thin films by using reactive dc pulsed magnetron sputtering process, nitrous oxide gas (N2O) was employed instead of nitrogen (N2) as the nitrogen dopant source. The nitrogen doping effect on the structural and optical properties of WO3 thin films was investigated by X-ray diffraction, transmission electron microscopy and UV-Vis spectroscopy. The thickness, refractive index and optical band gap energy of these films have been determined by analyzing the SE spectra using parameterized dispersion model. Morphological images reveal that the films are characterized by a hybrid structure comprising nanoparticles embeded in amorphous matrix and open channels between the agglomerated nanoparticles. Increasing nitrogen doping concentration is found to decrease the optical band gap energy and the refractive index. The reduced band gaps are associated with the N 2p orbital in the N-doped tungsten oxide films.

Effect of Er doping on optical band gap energy of TiO2 thin films prepared by spin coating

2013 ◽  
Vol 13 (7) ◽  
pp. 1301-1305 ◽  
Author(s):  
Deuk Yong Lee ◽  
Jin-Tae Kim ◽  
Ju-Hyun Park ◽  
Young-Hun Kim ◽  
In-Kyu Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Spin Coating ◽  
Optical Band Gap ◽  
Band Gap Energy ◽  
Tio2 Thin Films ◽  
Gap Energy ◽  
Er Doping

Effect of Microstructure of TiO 2 Thin Films on Optical Band Gap Energy

2005 ◽  
Vol 22 (7) ◽  
pp. 1787-1789 ◽  
Author(s):  
Tian Guang-Lei ◽  
He Hong-Bo ◽  
Shao Jian-Da
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Band Gap Energy ◽  
Gap Energy ◽  
Effect Of Microstructure

Optical and Electronic Analysis of Pure and Fe-Doped ZnO Thin Films Using Spectroscopic Ellipsometry and Kramers–Kronig Method

2019 ◽  
Vol 18 (01) ◽  
pp. 1850013 ◽  
Author(s):  
Maryam Motallebi Aghgonbad ◽  
Hassan Sedghi
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Spectroscopic Ellipsometry ◽  
Optical Band Gap ◽  
Band Gap Energy ◽  
Zno Thin Films ◽  
Fe Doping ◽  
Gap Energy ◽  
Optical And Electronic Properties ◽  
Doped Zno

In the present work, pure and Fe-doped ZnO thin films were deposited on glass substrates by sol–gel method. Zinc acetate and iron nitrate were used as the starting material and dopant source, respectively. The concentration of Fe doping was 6[Formula: see text]at.% and 8[Formula: see text]at.%. The optical and electronic properties of pure and Fe-doped ZnO thin films such as refraction index, extinction coefficient, dielectric function and optical band gap energy of the layers were obtained by spectroscopic ellipsometry method in the wavelength range of 300–900[Formula: see text]nm. The incidence angle of the layers kept 70[Formula: see text]. Also data obtained by Kramers–Kronig relations were used for comparison. The influence of Fe-doping concentration on the optical and electronic properties of thin films was studied. The transmittance data of ZnO thin films showed that 6[Formula: see text]at.% Fe-doped ZnO thin film has the highest transmittance value. Dielectric function of pure ZnO films was found to be higher compared with Fe-doped ones. Also it can be deduced from the results that Fe doping influences the optical band gap energy of thin films.

scholarly journals Synthesis, Optical, Chemical and Thermal Characterizations of PMMA-PS/CeO2 Nanoparticles Thin Film

Polymers ◽  
2021 ◽  
Vol 13 (7) ◽  
pp. 1158
Author(s):  
Areen A. Bani-Salameh ◽  
A. A. Ahmad ◽  
A. M. Alsaad ◽  
I. A. Qattan ◽  
Ihsan A. Aljarrah
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
High Energy ◽  
Band Gap Energy ◽  
Polymeric Thin Films ◽  
Gap Energy ◽  
Wide Range ◽  
Nanocomposite Thin Films

We report the synthesis of hybrid thin films based on polymethyl methacrylate) (PMMA) and polystyrene (PS) doped with 1%, 3%, 5%, and 7% of cerium dioxide nanoparticles (CeO2 NPs). The As-prepared thin films of (PMMA-PS) incorporated with CeO2 NPs are deposited on a glass substrate. The transmittance T% (λ) and reflectance R% (λ) of PMMA-PS/CeO2 NPs thin films are measured at room temperature in the spectral range (250–700) nm. High transmittance of 87% is observed in the low-energy regions. However, transmittance decreases sharply to a vanishing value in the high-energy region. In addition, as the CeO2 NPs concentration is increased, a red shift of the absorption edge is clearly observed suggesting a considerable decrease in the band gap energy of PMMA-PS/CeO2 NPs thin film. The optical constants (n and k) and related key optical and optoelectronic parameters of PMMA-PS/Ce NPs thin films are reported and interpreted. Furthermore, Tauc and Urbach models are employed to elucidate optical behavior and calculate the band gaps of the as-synthesized nanocomposite thin films. The optical band gap energy of PMMA-PS thin film is found to be 4.03 eV. Optical band gap engineering is found to be possible upon introducing CeO2 NPs into PMMA-PS polymeric thin films as demonstrated clearly by the continuous decrease of optical band gap upon increasing CeO2 content. Fourier-transform infrared spectroscopy (FTIR) analysis is conducted to identify the major vibrational modes of the nanocomposite. The peak at 541.42 cm−1 is assigned to Ce–O and indicates the incorporation of CeO2 NPs into the copolymers matrices. There were drastic changes to the width and intensity of the vibrational bands of PMMA-PS upon addition of CeO2 NPs. To examine the chemical and thermal stability, thermogravimetric (TGA) thermograms are measured. We found that (PMMA-PVA)/CeO2 NPs nanocomposite thin films are thermally stable below 110 °C. Therefore, they could be key candidate materials for a wide range of scaled multifunctional smart optical and optoelectronic devices.

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